O434.1 2003043033 强脉冲X射线辐照在Si-SiO<sub>2</sub>中感生的界面态及退火消除=Radiation-induced interface states of Si-SiO<sub>2</sub> by intensepulse X-ray and their annealing[刊,中]/杨志安（...O434.1 2003043033 强脉冲X射线辐照在Si-SiO<sub>2</sub>中感生的界面态及退火消除=Radiation-induced interface states of Si-SiO<sub>2</sub> by intensepulse X-ray and their annealing[刊,中]/杨志安（济南大学理学院.山东,济南（250022））,靳涛…∥强激光与粒子束.-2002,14（4）.-521-525利用强脉冲X射线对Si-SiO<sub>2</sub>界面进行了辐照,测量了界面态曲线和退火曲线。实验显示:经过强脉冲X射线对Si-SiO<sub>2</sub>界面进行辐照,在Si-SiO<sub>2</sub>界面感生出新的界面态,感生界面态的增加与辐照剂量成正比,并且易出现饱和现象。总结出了感生界面态密度产额D<sub>it</sub>随辐照剂量D变化的分布式,并定性分析了D<sub>it</sub>随D变化的行为。退火实验表明,强脉冲X射线辐照感生出的界面态越多,退火时这些界面态就消除得越快。退火过程显示有滞后现象,即辐照剂量大的阈电压漂移,在退火后恢复的绝对值要小于辐照剂量小的阈电压漂移。导出了阈电压漂移随退火时间变化的关系,定性解释了滞后现象。展开更多
A service life model of NAND flash and threshold voltage shift process is proposed to calculate the service life and endurance.The relationships among achievable program/erase(P/E) cycles,recovery time,bad block rate ...A service life model of NAND flash and threshold voltage shift process is proposed to calculate the service life and endurance.The relationships among achievable program/erase(P/E) cycles,recovery time,bad block rate and storage time are analyzed.The achievable endurance and service life of a NAND flash are evaluated based on a flash cell degradation and recovery model by varying recovery time,badblock rate,and storage time.It is proposed to improve the service lifetime of solid state disk by both relaxing the bad block rate limitation and retention time while extending the recovery time.The results indicate that endurance can be improved by 17 times if the storage time guarantee is reduced from 10 a to 1 a with 105 s recovery time inserted between cycles.展开更多
In this paper, we report a method to change the threshold voltage of SnO2 and In2O3 nanowire transistors by Ga^＋ ion irradiation. Unlike the results in earlier reports, the threshold voltages of SnO2 and In2O3 nanowi...In this paper, we report a method to change the threshold voltage of SnO2 and In2O3 nanowire transistors by Ga^＋ ion irradiation. Unlike the results in earlier reports, the threshold voltages of SnO2 and In2O3 nanowire field-effect transistors （FETs） shift in the negative gate voltage direction after Ga^＋ ion irradiation. Smaller threshold voltages, achieved by Ga^＋ ion irradiation, are required for high-performance and low-voltage operation. The threshold voltage shift can be attributed to the degradation of surface defects caused by Ga＋ ion irradiation. After irradiation, the current on/off ratio declines slightly, but is still close to -106. The results indicate that Ga^＋ ion beam irradiation plays a vital role in improving the performance of oxide nanowire FETs.展开更多
文摘O434.1 2003043033 强脉冲X射线辐照在Si-SiO<sub>2</sub>中感生的界面态及退火消除=Radiation-induced interface states of Si-SiO<sub>2</sub> by intensepulse X-ray and their annealing[刊,中]/杨志安（济南大学理学院.山东,济南（250022））,靳涛…∥强激光与粒子束.-2002,14（4）.-521-525利用强脉冲X射线对Si-SiO<sub>2</sub>界面进行了辐照,测量了界面态曲线和退火曲线。实验显示:经过强脉冲X射线对Si-SiO<sub>2</sub>界面进行辐照,在Si-SiO<sub>2</sub>界面感生出新的界面态,感生界面态的增加与辐照剂量成正比,并且易出现饱和现象。总结出了感生界面态密度产额D<sub>it</sub>随辐照剂量D变化的分布式,并定性分析了D<sub>it</sub>随D变化的行为。退火实验表明,强脉冲X射线辐照感生出的界面态越多,退火时这些界面态就消除得越快。退火过程显示有滞后现象,即辐照剂量大的阈电压漂移,在退火后恢复的绝对值要小于辐照剂量小的阈电压漂移。导出了阈电压漂移随退火时间变化的关系,定性解释了滞后现象。
基金Project(61171017)supported by the National Natural Science Foundation of China
文摘A service life model of NAND flash and threshold voltage shift process is proposed to calculate the service life and endurance.The relationships among achievable program/erase(P/E) cycles,recovery time,bad block rate and storage time are analyzed.The achievable endurance and service life of a NAND flash are evaluated based on a flash cell degradation and recovery model by varying recovery time,badblock rate,and storage time.It is proposed to improve the service lifetime of solid state disk by both relaxing the bad block rate limitation and retention time while extending the recovery time.The results indicate that endurance can be improved by 17 times if the storage time guarantee is reduced from 10 a to 1 a with 105 s recovery time inserted between cycles.
文摘In this paper, we report a method to change the threshold voltage of SnO2 and In2O3 nanowire transistors by Ga^＋ ion irradiation. Unlike the results in earlier reports, the threshold voltages of SnO2 and In2O3 nanowire field-effect transistors （FETs） shift in the negative gate voltage direction after Ga^＋ ion irradiation. Smaller threshold voltages, achieved by Ga^＋ ion irradiation, are required for high-performance and low-voltage operation. The threshold voltage shift can be attributed to the degradation of surface defects caused by Ga＋ ion irradiation. After irradiation, the current on/off ratio declines slightly, but is still close to -106. The results indicate that Ga^＋ ion beam irradiation plays a vital role in improving the performance of oxide nanowire FETs.
