Texture and grain boundary character distribution of Cu interconnects with different line width for as-deposited and annealed conditions were measured by EBSD. All specimens appear mixed texture and （111） texture is...Texture and grain boundary character distribution of Cu interconnects with different line width for as-deposited and annealed conditions were measured by EBSD. All specimens appear mixed texture and （111） texture is the dominate component.As-deposited interconnects undergo the phenomenon of self-annealing at RT,in which some abnormally large grains are found. Lower aspect ratio of lines and anneal treatment procured larger grains and stronger （111） texture. Meanwhile, the intensity proportion of other textures with lower strain energy to （111） texture is decreased. As-deposited specimens reveal （111）（112？ and （111） （231） components, （111） （110） component appeared and （111） （112？ and （111） （231） components were developed during the annealing process. High angle boundaries are dominant in all specimens, boundaries with a misorientation of 55°-60° and ∑3 ones in higher proportion, followed by lower boundaries with a misorientation of 35°-40° and 29 boundaries. As the aspect ratio of lines and anneal treatment increase,there is a gradual in- crement in ∑3 boundaries and a decrease in ∑9 boundaries.展开更多
One group of SiC films are grown on silicon-on-insulator （SOI） substrates with a series of silicon-overlayer thickness. Raman scattering spectroscopy measurement clearly indicates that a systematic trend of residual...One group of SiC films are grown on silicon-on-insulator （SOI） substrates with a series of silicon-overlayer thickness. Raman scattering spectroscopy measurement clearly indicates that a systematic trend of residual stress reduction as the silicon over-layer thickness decreases for the SOI substrates. Strain relaxation in the SiC epilayer is explained by force balance approach and near coincidence lattice model.展开更多
文摘Texture and grain boundary character distribution of Cu interconnects with different line width for as-deposited and annealed conditions were measured by EBSD. All specimens appear mixed texture and （111） texture is the dominate component.As-deposited interconnects undergo the phenomenon of self-annealing at RT,in which some abnormally large grains are found. Lower aspect ratio of lines and anneal treatment procured larger grains and stronger （111） texture. Meanwhile, the intensity proportion of other textures with lower strain energy to （111） texture is decreased. As-deposited specimens reveal （111）（112？ and （111） （231） components, （111） （110） component appeared and （111） （112？ and （111） （231） components were developed during the annealing process. High angle boundaries are dominant in all specimens, boundaries with a misorientation of 55°-60° and ∑3 ones in higher proportion, followed by lower boundaries with a misorientation of 35°-40° and 29 boundaries. As the aspect ratio of lines and anneal treatment increase,there is a gradual in- crement in ∑3 boundaries and a decrease in ∑9 boundaries.
文摘One group of SiC films are grown on silicon-on-insulator （SOI） substrates with a series of silicon-overlayer thickness. Raman scattering spectroscopy measurement clearly indicates that a systematic trend of residual stress reduction as the silicon over-layer thickness decreases for the SOI substrates. Strain relaxation in the SiC epilayer is explained by force balance approach and near coincidence lattice model.
