为解决池塘增氧装置水动力形成能力不足的问题,提出了一种新的设计方案。新设计基于双向输出传动机构原理,利用破水叶轮及空气中低阻偏心块的复合作用,在保障增氧能力的同时提升水动力影响范围,并对该摇摆式水动力装置在池塘的影响范围...为解决池塘增氧装置水动力形成能力不足的问题,提出了一种新的设计方案。新设计基于双向输出传动机构原理,利用破水叶轮及空气中低阻偏心块的复合作用,在保障增氧能力的同时提升水动力影响范围,并对该摇摆式水动力装置在池塘的影响范围和增氧能力进行了测试。结果表明:该装置可以将水动力影响范围提升至4670 m2以上,高于3 k W和1.5 k W的叶轮式增氧机;同时在1.5 k W能耗下增氧能力为2.67 kg/h,并能达到3 k W叶轮式增氧机的66.7%,符合国家标准中对于1.5 k W增氧机的增氧能力要求。研究表明,新装置的水动力形成能力有明显提升,能够更好地解决池塘水产养殖增氧过程中水体循环能力不足的问题。展开更多
The nitrogen ions implanted layer of p type 4H SiC epilayer is investigated.The fabrication processes and measurements of the implanted layer are given in details.The profile of implantation depth is simulated using...The nitrogen ions implanted layer of p type 4H SiC epilayer is investigated.The fabrication processes and measurements of the implanted layer are given in details.The profile of implantation depth is simulated using the Monte Carlo simulator TRIM.Lateral Schottky barrier diodes and transfer length method (TLM) measurement structure are made on nitrogen implanted layers for the testing.The concentration of activated donors N d is about 3 0×10 16 cm -3 .The resulting value for the activation rate in this study is 2 percent.The sheet resistance R sh is 30kΩ/□ and the resistivity ρ(R sh × d ) of the implanted layer is 0 72Ω·cm.The electron mobility calculated is about 300cm 2/(V·s) in the N implanted layer.展开更多
文摘为解决池塘增氧装置水动力形成能力不足的问题,提出了一种新的设计方案。新设计基于双向输出传动机构原理,利用破水叶轮及空气中低阻偏心块的复合作用,在保障增氧能力的同时提升水动力影响范围,并对该摇摆式水动力装置在池塘的影响范围和增氧能力进行了测试。结果表明:该装置可以将水动力影响范围提升至4670 m2以上,高于3 k W和1.5 k W的叶轮式增氧机;同时在1.5 k W能耗下增氧能力为2.67 kg/h,并能达到3 k W叶轮式增氧机的66.7%,符合国家标准中对于1.5 k W增氧机的增氧能力要求。研究表明,新装置的水动力形成能力有明显提升,能够更好地解决池塘水产养殖增氧过程中水体循环能力不足的问题。
文摘The nitrogen ions implanted layer of p type 4H SiC epilayer is investigated.The fabrication processes and measurements of the implanted layer are given in details.The profile of implantation depth is simulated using the Monte Carlo simulator TRIM.Lateral Schottky barrier diodes and transfer length method (TLM) measurement structure are made on nitrogen implanted layers for the testing.The concentration of activated donors N d is about 3 0×10 16 cm -3 .The resulting value for the activation rate in this study is 2 percent.The sheet resistance R sh is 30kΩ/□ and the resistivity ρ(R sh × d ) of the implanted layer is 0 72Ω·cm.The electron mobility calculated is about 300cm 2/(V·s) in the N implanted layer.