Si based single electron transistor (SET) is fabricated successfully on p type SIMOX substrate,based on electron beam (EB) lithography,reactive ion etching (RIE) and thermal oxidation.In particular,using thermal oxi...Si based single electron transistor (SET) is fabricated successfully on p type SIMOX substrate,based on electron beam (EB) lithography,reactive ion etching (RIE) and thermal oxidation.In particular,using thermal oxidation and etching off the oxide layer,a one dimensional Si quantum wire can be converted into several quantum dots inside quantum wire in connection with the source and drain regions.The differential conductance (d I ds /d V ds ) oscillations and the Coulomb staircases in the source drain current ( I ds ) are shown clearly dependent on the source drain voltage at 5 3K.The I ds V gs (gate voltage) oscillations are observed from the I ds V gs characteristics as a function of V gs at different temperatures and various values of V ds .For a SET whose total capacitance is about 9 16aF,the I ds V gs oscillations can be observed at 77K.展开更多
Based on the charge discreteness,the property of quantum current and the effects of Coulomb blockade have been investigated for the mutual inductance coupled mesoscopic system with active source in external magnetic f...Based on the charge discreteness,the property of quantum current and the effects of Coulomb blockade have been investigated for the mutual inductance coupled mesoscopic system with active source in external magnetic field.The relationships between quantum current and the conditions of Coulomb blockade in the coupled dual-ring system are given here.展开更多
文摘Si based single electron transistor (SET) is fabricated successfully on p type SIMOX substrate,based on electron beam (EB) lithography,reactive ion etching (RIE) and thermal oxidation.In particular,using thermal oxidation and etching off the oxide layer,a one dimensional Si quantum wire can be converted into several quantum dots inside quantum wire in connection with the source and drain regions.The differential conductance (d I ds /d V ds ) oscillations and the Coulomb staircases in the source drain current ( I ds ) are shown clearly dependent on the source drain voltage at 5 3K.The I ds V gs (gate voltage) oscillations are observed from the I ds V gs characteristics as a function of V gs at different temperatures and various values of V ds .For a SET whose total capacitance is about 9 16aF,the I ds V gs oscillations can be observed at 77K.
基金This work is supported by the Science Foundation of Education Office ,Jiangsu,China(under grant number 05KJD140035)
文摘Based on the charge discreteness,the property of quantum current and the effects of Coulomb blockade have been investigated for the mutual inductance coupled mesoscopic system with active source in external magnetic field.The relationships between quantum current and the conditions of Coulomb blockade in the coupled dual-ring system are given here.
