期刊文献+
共找到1篇文章
< 1 >
每页显示 20 50 100
130nm/90nm新工艺开发用的铜CMP阻挡层浆料系统
1
作者 ChristineYe MichaelOliver 等 《半导体技术》 CAS CSCD 北大核心 2003年第4期47-48,57,共3页
Introduction The process development of copper/low-K backends is unique in the semiconductor industry. Thereare a substantial number of alternative integrationapproaches to the dual damascene copper processthat incorp... Introduction The process development of copper/low-K backends is unique in the semiconductor industry. Thereare a substantial number of alternative integrationapproaches to the dual damascene copper processthat incorporates a low-K dielectric. With the multi-plicity of integration approaches and materials, therequirements on the CMP processes are highly spe-cific to each integration scheme, in particular forwhat is labeled the second step, or copper barrierCMP step. 展开更多
关键词 CMP 阻挡层浆料系统 半导体
下载PDF
上一页 1 下一页 到第
使用帮助 返回顶部