An air-stable photovoltaic device based on znic oxide nanoparticles (ZNP) in an inverted structure of indium tin oxide (ITO)/ZnO/poly (3-hexylthiophene) (P3HT): [6,6]-phenyl C61-butyric acid methyl ester (P...An air-stable photovoltaic device based on znic oxide nanoparticles (ZNP) in an inverted structure of indium tin oxide (ITO)/ZnO/poly (3-hexylthiophene) (P3HT): [6,6]-phenyl C61-butyric acid methyl ester (PCBM)/MoO3/Ag is studied. We fm.d that the optimum thickness of the MoO3 layer is 2 nm. When the MoO3 blocking layer is introduced, the fill factor of the devices is increased from 29% to 40%, the power conversion efficiency is directly promoted from 0.35% to 1.27%.The stability under ambient conditions of this inverted structure device much is better due to the improved stability at the polymer/Ag interface. The enhancement is attributed to the high carriers mobility and suitable band gap of MoO3 layer.展开更多
基金supported by the National Natural Science Foundation of China (Nos.60876046 and 60976048)the Key Project of Education Ministry of (No.209007)+2 种基金the Tianjin Natural Science Council (No.0ZCKFGX01900)the Scientific Developing Foundation of Tianjin Education Commission (No.20100723)the Tianjin Key Discipline of Material Physics and Chemistry
文摘An air-stable photovoltaic device based on znic oxide nanoparticles (ZNP) in an inverted structure of indium tin oxide (ITO)/ZnO/poly (3-hexylthiophene) (P3HT): [6,6]-phenyl C61-butyric acid methyl ester (PCBM)/MoO3/Ag is studied. We fm.d that the optimum thickness of the MoO3 layer is 2 nm. When the MoO3 blocking layer is introduced, the fill factor of the devices is increased from 29% to 40%, the power conversion efficiency is directly promoted from 0.35% to 1.27%.The stability under ambient conditions of this inverted structure device much is better due to the improved stability at the polymer/Ag interface. The enhancement is attributed to the high carriers mobility and suitable band gap of MoO3 layer.