A novel structure of ideal ohmic contact p^＋ （SiGeC）-n^- -n^＋ diodes with three-step graded doping concentration in the base region is presented, and the changing doping concentration gradient is also optimized. U...A novel structure of ideal ohmic contact p^＋ （SiGeC）-n^- -n^＋ diodes with three-step graded doping concentration in the base region is presented, and the changing doping concentration gradient is also optimized. Using MEDICI, the physical parameter models applicable for SiGeC/Si heterojunction power diodes are given. The simulation results indicate that the diodes with graded doping concentration in the base region not only have the merit of fast and soft reverse recovery but also double reverse blocking voltage,and their forward conducting voltage has dropped to some extent,compared to the diodes with constant doping concentration in the base region. The new structure achieves a good trade-off in Qs-Vf-Ir ,and its combination of properties is superior to ideal ohmic contact diodes and conventional diodes.展开更多
The influence of the purity degree of the commercial aluminium on the mechanical properties： elastic stress, tensile strength, Brinell hardness, resilience and elongation at break was investigated. It was found that ...The influence of the purity degree of the commercial aluminium on the mechanical properties： elastic stress, tensile strength, Brinell hardness, resilience and elongation at break was investigated. It was found that the first three resistance characteristics decrease with the growth of the purity of the material chosen to the detriment of two ductility characteristics that rise to the three states considered： crude of casting noted： F, Annealed noted： O, hardened noted ： H1/4. Furthermore, it is important to note that the hardened and the annealed lead respectively to a considerable hardening and a considerable softening. This hardening and this softening of the material in question can be respectively associated with the increase in dislocation density and immigration impurity elements of dislocations.展开更多
Electrical resistivity tomography (ERT) has been used to experimentally detect shallow buried faults in urban areas in the past a few years, with some progress and experience obtained. According to the results from Ol...Electrical resistivity tomography (ERT) has been used to experimentally detect shallow buried faults in urban areas in the past a few years, with some progress and experience obtained. According to the results from Olympic Park, Beijing, Shandong Province, Gansu Province and Shanxi Province, we have generalized the method and procedure for inferring the discontinuity of electrical structures (DES) indicating a buried fault in urban areas from resistivity tomograms and its typical electrical features. In general, the layered feature of the electrical structure is first analyzed to preliminarily define whether or not a DES exists in the target area. Resistivity contours in resistivity tomograms are then analyzed from the deep to the shallow. If they extend upward from the deep to the shallow and shape into an integral dislocation, sharp flexure (convergence) or gradient zone, it is inferred that the DES exists, indicating a buried fault. Finally, horizontal tracing is be carried out to define the trend of the DES. The DES can be divided into three types-type AB, ABA and AC. In the present paper, the Zhangdian-Renhe fault system in Zibo city is used as an example to illustrate how to use the method to infer the location and spatial extension of a target fault. Geologic drilling holes are placed based on our research results, and the drilling logs testify that our results are correct. However, the method of this paper is not exclusive and inflexible. It is expected to provide reference and assistance for inferring the shallow buried faults in urban areas from resistivity tomograms in the future.展开更多
0224478功率集成光激 MOS 控制交流多路开关模拟设计[刊]/张华曹//西安理工大学学报.—2002,18(2).—151～153(K)介绍了一种新型功率集成光激 MOS 控制多路开关,它由双向晶闸管、MOS 器件、光电器件组成。此开关通过光电转换来实现强电...0224478功率集成光激 MOS 控制交流多路开关模拟设计[刊]/张华曹//西安理工大学学报.—2002,18(2).—151～153(K)介绍了一种新型功率集成光激 MOS 控制多路开关,它由双向晶闸管、MOS 器件、光电器件组成。此开关通过光电转换来实现强电与弱电之间的隔离;可工作在交流状态,其通态压降低,约在1.5～3V 之间;并对其阻断特性、电流特性、开关持性进行了全面的模拟分析。此开关适用于开发各种电源开关产品。展开更多
文摘A novel structure of ideal ohmic contact p^＋ （SiGeC）-n^- -n^＋ diodes with three-step graded doping concentration in the base region is presented, and the changing doping concentration gradient is also optimized. Using MEDICI, the physical parameter models applicable for SiGeC/Si heterojunction power diodes are given. The simulation results indicate that the diodes with graded doping concentration in the base region not only have the merit of fast and soft reverse recovery but also double reverse blocking voltage,and their forward conducting voltage has dropped to some extent,compared to the diodes with constant doping concentration in the base region. The new structure achieves a good trade-off in Qs-Vf-Ir ,and its combination of properties is superior to ideal ohmic contact diodes and conventional diodes.
文摘The influence of the purity degree of the commercial aluminium on the mechanical properties： elastic stress, tensile strength, Brinell hardness, resilience and elongation at break was investigated. It was found that the first three resistance characteristics decrease with the growth of the purity of the material chosen to the detriment of two ductility characteristics that rise to the three states considered： crude of casting noted： F, Annealed noted： O, hardened noted ： H1/4. Furthermore, it is important to note that the hardened and the annealed lead respectively to a considerable hardening and a considerable softening. This hardening and this softening of the material in question can be respectively associated with the increase in dislocation density and immigration impurity elements of dislocations.
基金The project entitled "Urban Active Fault Surveying Project"(143623) funded by the National Development and Roform Commission of China"Active Faults Exploration and Seismic Hazard Assessment in Zibo City"(SD1501) funded by the Department of Science & Technology of Shangdong Province,China
文摘Electrical resistivity tomography (ERT) has been used to experimentally detect shallow buried faults in urban areas in the past a few years, with some progress and experience obtained. According to the results from Olympic Park, Beijing, Shandong Province, Gansu Province and Shanxi Province, we have generalized the method and procedure for inferring the discontinuity of electrical structures (DES) indicating a buried fault in urban areas from resistivity tomograms and its typical electrical features. In general, the layered feature of the electrical structure is first analyzed to preliminarily define whether or not a DES exists in the target area. Resistivity contours in resistivity tomograms are then analyzed from the deep to the shallow. If they extend upward from the deep to the shallow and shape into an integral dislocation, sharp flexure (convergence) or gradient zone, it is inferred that the DES exists, indicating a buried fault. Finally, horizontal tracing is be carried out to define the trend of the DES. The DES can be divided into three types-type AB, ABA and AC. In the present paper, the Zhangdian-Renhe fault system in Zibo city is used as an example to illustrate how to use the method to infer the location and spatial extension of a target fault. Geologic drilling holes are placed based on our research results, and the drilling logs testify that our results are correct. However, the method of this paper is not exclusive and inflexible. It is expected to provide reference and assistance for inferring the shallow buried faults in urban areas from resistivity tomograms in the future.
文摘0224478功率集成光激 MOS 控制交流多路开关模拟设计[刊]/张华曹//西安理工大学学报.—2002,18(2).—151～153(K)介绍了一种新型功率集成光激 MOS 控制多路开关,它由双向晶闸管、MOS 器件、光电器件组成。此开关通过光电转换来实现强电与弱电之间的隔离;可工作在交流状态,其通态压降低,约在1.5～3V 之间;并对其阻断特性、电流特性、开关持性进行了全面的模拟分析。此开关适用于开发各种电源开关产品。
