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Effect of High-Gate-Voltage Stress on the Reverse Gated-Diode Current in LDD nMOSFET’s 被引量:2
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作者 陈海峰 郝跃 马晓华 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2008年第5期875-878,共4页
The reverse generation current under high-gate-voltage stress condition in LDD nMOSFET's is studied. We find that the generation current peak decreases as the stress time increases. We ascribe this finding to the dom... The reverse generation current under high-gate-voltage stress condition in LDD nMOSFET's is studied. We find that the generation current peak decreases as the stress time increases. We ascribe this finding to the dominating oxide trapped electrons that reduce the effective drain bias, lowering the maximal generation rate. The density of the effective trapped electrons affecting the effective drain bias is calculated with our model. 展开更多
关键词 generation current high gate voltage stress trapped electron
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Effects of Trapped Electrons on Off-axis Lower Hybrid Current Drive
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作者 JIAO Yiming LONG Yongxing DONG Jiaqi GAO Qingdi WANG Aike LIU Yong 《Southwestern Institute of Physics Annual Report》 2006年第1期121-122,共2页
The effects of trapped electrons on off-axis lower hybrid current drive (LHCD) in tokamaks are studied. The influence of the resonance regime on the current drive efficiency as well as the influence of trapped parti... The effects of trapped electrons on off-axis lower hybrid current drive (LHCD) in tokamaks are studied. The influence of the resonance regime on the current drive efficiency as well as the influence of trapped particle fraction on the current drive efficiency are emphasized. 展开更多
关键词 Trapping electron effect Off-axis lower hybrid current drive
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