Soil spiders were pitfall-trapped once every month in three forest vegetation types of Ziwuling natural secondary forest region, Gansu Province from April to October, 2004. A total of 2 164 spiders were collected, bel...Soil spiders were pitfall-trapped once every month in three forest vegetation types of Ziwuling natural secondary forest region, Gansu Province from April to October, 2004. A total of 2 164 spiders were collected, belonging to 43 species in 19 families, captured in 630 pitfall trap collections. Linyphiidae, Gnaphosidae and Lycosodae were found to be the dominant families in all habitat types, and the composition of soil spider assemblages was different between the three habitats. Ecological indices of diversity, richness and evenness were significantly different between the three habitats （ P 〈 0.05）. The relative abundance of guilds （based on numbers of individuals） varied greatly （P 〈 0.01）, which may releet resource availability within habitat types. The existence of different patterns within the assemblages reflects the importance of maintaining habitat heterogeneity and vegetation types in order to preserve soil spider biodiversity.展开更多
According to the definition of interface traps,a new application of relaxation spectral technique to sub-threshold swing shift and sub-threshold gate voltage shift is proposed to extract interface trap density in 1.9n...According to the definition of interface traps,a new application of relaxation spectral technique to sub-threshold swing shift and sub-threshold gate voltage shift is proposed to extract interface trap density in 1.9nm MOSFET.And thus the energy distribution of interface trap can be determined.According to the two methods,the energy profile of interface traps agrees with those reported in literature.Compared to other methods,this method is simpler and more convenient.展开更多
The dependence of the Recombination- Generation( R- G) current on the bulk trap characteristics and sili- con film structure in SOI lateral p+ p- n+ diode has been analyzed num erically by using the simulation tool,D...The dependence of the Recombination- Generation( R- G) current on the bulk trap characteristics and sili- con film structure in SOI lateral p+ p- n+ diode has been analyzed num erically by using the simulation tool,DESSIS- ISE.By varying the bulk trap characteristics such as the trap density and energy level spectrum systematically,the dependence of the R- G current on both of them has been dem onstrated in details.Moreover,the silicon film doping concentration and thickness are changed to make silicon body varies from the fully- depletion m ode into the partial- ly- depletion one.The influence of the transfer of silicon body characteristics on the R- G currenthas also been care- fully examined.A better understanding is obtained of the behavior of bulk trap R- G current in the SOI lateral gat- ed- diode.展开更多
文摘Soil spiders were pitfall-trapped once every month in three forest vegetation types of Ziwuling natural secondary forest region, Gansu Province from April to October, 2004. A total of 2 164 spiders were collected, belonging to 43 species in 19 families, captured in 630 pitfall trap collections. Linyphiidae, Gnaphosidae and Lycosodae were found to be the dominant families in all habitat types, and the composition of soil spider assemblages was different between the three habitats. Ecological indices of diversity, richness and evenness were significantly different between the three habitats （ P 〈 0.05）. The relative abundance of guilds （based on numbers of individuals） varied greatly （P 〈 0.01）, which may releet resource availability within habitat types. The existence of different patterns within the assemblages reflects the importance of maintaining habitat heterogeneity and vegetation types in order to preserve soil spider biodiversity.
文摘According to the definition of interface traps,a new application of relaxation spectral technique to sub-threshold swing shift and sub-threshold gate voltage shift is proposed to extract interface trap density in 1.9nm MOSFET.And thus the energy distribution of interface trap can be determined.According to the two methods,the energy profile of interface traps agrees with those reported in literature.Compared to other methods,this method is simpler and more convenient.
基金摩托罗拉和北京大学的联合研究项目!"Gated-Diode Method Application Development and Sensitivity Analysis"的资助 (合同号 :MSPSESTL
文摘The dependence of the Recombination- Generation( R- G) current on the bulk trap characteristics and sili- con film structure in SOI lateral p+ p- n+ diode has been analyzed num erically by using the simulation tool,DESSIS- ISE.By varying the bulk trap characteristics such as the trap density and energy level spectrum systematically,the dependence of the R- G current on both of them has been dem onstrated in details.Moreover,the silicon film doping concentration and thickness are changed to make silicon body varies from the fully- depletion m ode into the partial- ly- depletion one.The influence of the transfer of silicon body characteristics on the R- G currenthas also been care- fully examined.A better understanding is obtained of the behavior of bulk trap R- G current in the SOI lateral gat- ed- diode.
