GaAs PIN diodes optimized for X-band low loss and high isolation switch application are presented. The impact of diode physical characteristics and electrical parameters on switch performance is discussed. A new struc...GaAs PIN diodes optimized for X-band low loss and high isolation switch application are presented. The impact of diode physical characteristics and electrical parameters on switch performance is discussed. A new structure for GaAs PIN diodes is proposed and the fabrication process is described. GaAs PIN diodes with an on-state resistance of 〈2. 2Ω and off-state capacitance -〈20fF in the range of 100MHz to 12.1GHz are obtained.展开更多
This paper reports a contact cantilever MEMS switch. The designed switch has a metal cantilever that acts as an electrostatically activated switch with processing options to achieve dielectric isolation of the control...This paper reports a contact cantilever MEMS switch. The designed switch has a metal cantilever that acts as an electrostatically activated switch with processing options to achieve dielectric isolation of the controlvoltage path from the signal path. To obtain good material properties,an ANSYS FEA tool is used to optimize the structure. The RF MEMS switch is fabricated via a surface micromachining process. The switch has an actuation voltage of 12V,which is close to the simulated value of 11V. The measured and the HFSS simulated isolations are both higher than - 20dB from 0.05 to 10GHz. The measured insertion loss is less than - 0.9dB, relatively larger than the simulated loss of less than - 0.2dB from 0.05 to 10GHz. This is because a contact resistance introduced due to poor physical contact between the bottom lines and the metal cantilever.展开更多
文摘GaAs PIN diodes optimized for X-band low loss and high isolation switch application are presented. The impact of diode physical characteristics and electrical parameters on switch performance is discussed. A new structure for GaAs PIN diodes is proposed and the fabrication process is described. GaAs PIN diodes with an on-state resistance of 〈2. 2Ω and off-state capacitance -〈20fF in the range of 100MHz to 12.1GHz are obtained.
文摘This paper reports a contact cantilever MEMS switch. The designed switch has a metal cantilever that acts as an electrostatically activated switch with processing options to achieve dielectric isolation of the controlvoltage path from the signal path. To obtain good material properties,an ANSYS FEA tool is used to optimize the structure. The RF MEMS switch is fabricated via a surface micromachining process. The switch has an actuation voltage of 12V,which is close to the simulated value of 11V. The measured and the HFSS simulated isolations are both higher than - 20dB from 0.05 to 10GHz. The measured insertion loss is less than - 0.9dB, relatively larger than the simulated loss of less than - 0.2dB from 0.05 to 10GHz. This is because a contact resistance introduced due to poor physical contact between the bottom lines and the metal cantilever.
