Hexagonal boron nitride(h-BN)is found to have widespread application,owing to its outstanding properties,including gate dielectrics,passivation layers,and tunneling layers.The current studies on the funda⁃mental physi...Hexagonal boron nitride(h-BN)is found to have widespread application,owing to its outstanding properties,including gate dielectrics,passivation layers,and tunneling layers.The current studies on the funda⁃mental physical properties of these ultrathin h-BN films and the electron tunneling effect among them are inade⁃quate.In this work,the effective mass in h-BN was successfully determined through a combined approach of ex⁃perimental and theoretical research methods by fitting the current-voltage curves of metal/insulator/metal struc⁃tures.It was observed that within a range of 4-22 layers,the effective mass of h-BN exhibits a monotonic de⁃crease with an increase in the number of layers.The physical parameters of the Fowler-Nordheim tunneling model in the context of electron tunneling in h-BN are precisely ascertained by utilizing the extracted effective mass.Ad⁃ditionally,the impact of fixed charges at the metal/h-BN interface and various metal electrode types on FowlerNordheim tunneling within this structure is investigated utilizing this physical parameter in Sentaurus TCAD soft⁃ware.This work is informative and instructive in promoting applications in the fields of h-BN related infrared physics and technology.展开更多
A direct tunneling model through gate dielectric s in CMOS devices in the frame of WKB approximation is reported.In the model,an im proved one-band effective mass approximation is used for the hole quantization, wher...A direct tunneling model through gate dielectric s in CMOS devices in the frame of WKB approximation is reported.In the model,an im proved one-band effective mass approximation is used for the hole quantization, where valence band mixing is taken into account.By comparing to the experiments, the model is demonstrated to be applicable to both electron and hole tunneling c urrents in CMOS devices.The effect of the dispersion in oxide energy gap on the tunneling current is also studied.This model can be further extended to study th e direct tunneling current in future high-k materials.展开更多
The saturation behavior of stress current is studied.The three types of precursor sites for trap generation are also introduced by fitting method based on first order rate equation.A further investigation by statistic...The saturation behavior of stress current is studied.The three types of precursor sites for trap generation are also introduced by fitting method based on first order rate equation.A further investigation by statistics experiments shows that there are definite relationships among time constant of trap generation,the time to breakdown,and stress voltage.It also means that the time constant of trap generation can be used to predict oxide lifetime.This method is faster for TDDB study compared with usual breakdown experiments.展开更多
The effect of neutral trap on tunneling currentin ultrathin MOSFETs is investigated by num erical analy- sis.The barrier variation arisen by neutral trap in oxide layer is described as a rectangular potential well in...The effect of neutral trap on tunneling currentin ultrathin MOSFETs is investigated by num erical analy- sis.The barrier variation arisen by neutral trap in oxide layer is described as a rectangular potential well in the con- duction band of Si O2 .The different barrier variation of an ultrathin metal- oxide- sem iconductor(MOS) structure with oxide thickness of4nm is numerically calculated.It is shown that the effect of neutral trap on tunneling cur- rent can not be neglected.The tunneling current is increased when the neutral trap exists in the oxide layer.This simple m odel can be used to understand the occurring mechanism of stress induced leakage current.展开更多
基金Supported by the National Natural Science Foundation of China(62074085,62104118)。
文摘Hexagonal boron nitride(h-BN)is found to have widespread application,owing to its outstanding properties,including gate dielectrics,passivation layers,and tunneling layers.The current studies on the funda⁃mental physical properties of these ultrathin h-BN films and the electron tunneling effect among them are inade⁃quate.In this work,the effective mass in h-BN was successfully determined through a combined approach of ex⁃perimental and theoretical research methods by fitting the current-voltage curves of metal/insulator/metal struc⁃tures.It was observed that within a range of 4-22 layers,the effective mass of h-BN exhibits a monotonic de⁃crease with an increase in the number of layers.The physical parameters of the Fowler-Nordheim tunneling model in the context of electron tunneling in h-BN are precisely ascertained by utilizing the extracted effective mass.Ad⁃ditionally,the impact of fixed charges at the metal/h-BN interface and various metal electrode types on FowlerNordheim tunneling within this structure is investigated utilizing this physical parameter in Sentaurus TCAD soft⁃ware.This work is informative and instructive in promoting applications in the fields of h-BN related infrared physics and technology.
文摘A direct tunneling model through gate dielectric s in CMOS devices in the frame of WKB approximation is reported.In the model,an im proved one-band effective mass approximation is used for the hole quantization, where valence band mixing is taken into account.By comparing to the experiments, the model is demonstrated to be applicable to both electron and hole tunneling c urrents in CMOS devices.The effect of the dispersion in oxide energy gap on the tunneling current is also studied.This model can be further extended to study th e direct tunneling current in future high-k materials.
文摘The saturation behavior of stress current is studied.The three types of precursor sites for trap generation are also introduced by fitting method based on first order rate equation.A further investigation by statistics experiments shows that there are definite relationships among time constant of trap generation,the time to breakdown,and stress voltage.It also means that the time constant of trap generation can be used to predict oxide lifetime.This method is faster for TDDB study compared with usual breakdown experiments.
文摘The effect of neutral trap on tunneling currentin ultrathin MOSFETs is investigated by num erical analy- sis.The barrier variation arisen by neutral trap in oxide layer is described as a rectangular potential well in the con- duction band of Si O2 .The different barrier variation of an ultrathin metal- oxide- sem iconductor(MOS) structure with oxide thickness of4nm is numerically calculated.It is shown that the effect of neutral trap on tunneling cur- rent can not be neglected.The tunneling current is increased when the neutral trap exists in the oxide layer.This simple m odel can be used to understand the occurring mechanism of stress induced leakage current.
