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Flash闪存技术浅析 被引量:5
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作者 林倩 《产业与科技论坛》 2007年第9期143-144,共2页
受益于消费电子产品的旺盛需求,Flash闪存已取代RAM成为存储器家族中最主要的力量。根据逻辑结构的不同,Flash闪存主要可分为NAND和NOR两种类型,本文主要介绍了这两种类型Flash闪存的基本原理、特点、电荷生成和存储方案、技术方案及发展。
关键词 FLASH闪存 NAND闪存 NOR闪存 浮动栅控制栅 通道热电子编程 隧道效应法 SLC MLC RAM
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Seismic reliability analysis of shield tunnel faces under multiple failure modes by pseudo-dynamic method and response surface method 被引量:3
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作者 ZHANG Jia-hua XU Peng +1 位作者 SUN Wang-cheng LI Bo 《Journal of Central South University》 SCIE EI CAS CSCD 2022年第5期1553-1564,共12页
In order to investigate the stability problem of shield tunnel faces subjected to seismic loading,the pseudodynamic method(P-DM)was employed to analyze the seismic effect on the face.Two kinds of failure mechanisms of... In order to investigate the stability problem of shield tunnel faces subjected to seismic loading,the pseudodynamic method(P-DM)was employed to analyze the seismic effect on the face.Two kinds of failure mechanisms of active collapse and passive extrusion were considered,and a seismic reliability model of shield tunnel faces under multifailure mode was established.The limit analysis method and the response surface method(RSM)were used together to solve the reliability of shield tunnel faces subjected to seismic action.Comparing with existing results,the results of this work are effective.The effects of seismic load and rock mass strength on the collapse pressure,extrusion pressure and reliability index were discussed,and reasonable ranges of support pressure of shield tunnel faces under seismic action were presented.This method can provide a new idea for solving the shield thrust parameter under the seismic loading. 展开更多
关键词 shield tunnel face pseudo-dynamic method seismic effect multi-failure mode support pressure range
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