TiC, ZrC and TaC modified layers were in-situ prepared on graphite matrix by chemical vapor infiltration method with metal salts as the activator. Taking the TiC modified layer as an example, through thermodynamic cal...TiC, ZrC and TaC modified layers were in-situ prepared on graphite matrix by chemical vapor infiltration method with metal salts as the activator. Taking the TiC modified layer as an example, through thermodynamic calculation and experiment, the thermal decomposition process of raw materials(Ti/K_(2)TiF_(6)) was analyzed, the formation mechanism of TiC was determined, and the distribution of TiC modified layer was modulated. The results show that activator K_(2)TiF_(6)has higher decomposition temperature than NH4Cl, which is conducive to improving the utilization rate of raw materials in the gas infiltration process. Increasing the content of Ti powder can increase the concentration of reaction gas and contribute to the formation of TiC modified layer. When the molar ratio of Ti to K_(2)TiF_(6)is 3:1, the surface thickness and infiltration depth of Ti C are 5.42 and 136.24 μm, respectively. Increasing the reaction temperature can improve the rate of in-situ reaction and the thickness of TiC surface layer. When the experimental temperature rises to 1600 °C, the TiC surface layer thickness increases to 20.27 μm.展开更多
基金financially supported by the National Natural Science Foundation of China(No.11705281)。
文摘TiC, ZrC and TaC modified layers were in-situ prepared on graphite matrix by chemical vapor infiltration method with metal salts as the activator. Taking the TiC modified layer as an example, through thermodynamic calculation and experiment, the thermal decomposition process of raw materials(Ti/K_(2)TiF_(6)) was analyzed, the formation mechanism of TiC was determined, and the distribution of TiC modified layer was modulated. The results show that activator K_(2)TiF_(6)has higher decomposition temperature than NH4Cl, which is conducive to improving the utilization rate of raw materials in the gas infiltration process. Increasing the content of Ti powder can increase the concentration of reaction gas and contribute to the formation of TiC modified layer. When the molar ratio of Ti to K_(2)TiF_(6)is 3:1, the surface thickness and infiltration depth of Ti C are 5.42 and 136.24 μm, respectively. Increasing the reaction temperature can improve the rate of in-situ reaction and the thickness of TiC surface layer. When the experimental temperature rises to 1600 °C, the TiC surface layer thickness increases to 20.27 μm.
