We propose and analyze a novel Si-based electro-optic modulator with an improved metal-oxide-semiconductor （MOS） capacitor configuration integrated into silicon-on-insulator （SOl）. Three gate-oxide layers embedded...We propose and analyze a novel Si-based electro-optic modulator with an improved metal-oxide-semiconductor （MOS） capacitor configuration integrated into silicon-on-insulator （SOl）. Three gate-oxide layers embedded in the silicon waveguide constitute a triple MOS capacitor structure, which boosts the modulation efficiency compared with a single MOS capacitor. The simulation results demonstrate that the Vπ Lπ product is 2. 4V · cm. The rise time and fall time of the proposed device are calculated to be 80 and 40ps from the transient response curve, respectively,indicating a bandwidth of 8GHz. The phase shift efficiency and bandwidth can be enhanced by rib width scaling.展开更多
A 10Gb/s transmitter module containing an electroabsorption modulator monolithically integrated with a distributed feedback (DFB) semiconductor laser is fabricated using the identical epitaxial layer scheme.Gain-coupl...A 10Gb/s transmitter module containing an electroabsorption modulator monolithically integrated with a distributed feedback (DFB) semiconductor laser is fabricated using the identical epitaxial layer scheme.Gain-coupling mechanism is employed to improve the single mode yield of the DFB laser,while inductively coupled plasma dry etching technique is utilized to reduce the modulator capacitance.The integrated device exhibits a threshold current as low as 12mA and an extinction ratio over 15dB at -2V bias.The small signal modulation bandwidth is measured to be over 10GHz.The transmission experiment at 10Gb/s indicates a power penalty less than 1dB at a bit-error-rate of 10 -12 after transmission through 35km single mode fiber.展开更多
文摘We propose and analyze a novel Si-based electro-optic modulator with an improved metal-oxide-semiconductor （MOS） capacitor configuration integrated into silicon-on-insulator （SOl）. Three gate-oxide layers embedded in the silicon waveguide constitute a triple MOS capacitor structure, which boosts the modulation efficiency compared with a single MOS capacitor. The simulation results demonstrate that the Vπ Lπ product is 2. 4V · cm. The rise time and fall time of the proposed device are calculated to be 80 and 40ps from the transient response curve, respectively,indicating a bandwidth of 8GHz. The phase shift efficiency and bandwidth can be enhanced by rib width scaling.
文摘A 10Gb/s transmitter module containing an electroabsorption modulator monolithically integrated with a distributed feedback (DFB) semiconductor laser is fabricated using the identical epitaxial layer scheme.Gain-coupling mechanism is employed to improve the single mode yield of the DFB laser,while inductively coupled plasma dry etching technique is utilized to reduce the modulator capacitance.The integrated device exhibits a threshold current as low as 12mA and an extinction ratio over 15dB at -2V bias.The small signal modulation bandwidth is measured to be over 10GHz.The transmission experiment at 10Gb/s indicates a power penalty less than 1dB at a bit-error-rate of 10 -12 after transmission through 35km single mode fiber.
