Discussed is a review and perspective of architecture, materials and process technology for dynamic random access memory(DRAM) applications. Key challenges of the transistor and capacitor scaling from DRAM will be rev...Discussed is a review and perspective of architecture, materials and process technology for dynamic random access memory(DRAM) applications. Key challenges of the transistor and capacitor scaling from DRAM will be reviewed. To continue scaling down, multi-gate devices with very thin silicon channels are most promising. Several architectures like Fin-field effect transistor(Fin-FET), Wafer bonded double gate and silicon on nothing(SON) gate-all-around have been demonstrated with good electrical characteristics. An overview of the evolution of capacitor technology is also presented from the early days of planar poly/insulator/silicon(PIS) capacitors to the metal/insulator/metal(MIM) capacitors used for today 50nm technology node and below. In comparing Ta2O5, HfO2 and Al2O3 as high-k dielectric for use in DRAM technology, Al2O3 is found to give a good compromise between capacitor performance and manufacturability used in MIM architecture.展开更多
In the modern material engineering, the use of nanometer materials has entered the highly and intensively utilized stage, so new nanometer materials have been continuously found to replace the traditional ordinary mat...In the modern material engineering, the use of nanometer materials has entered the highly and intensively utilized stage, so new nanometer materials have been continuously found to replace the traditional ordinary materials. The so-called nanometer materials have the size within l - 100nm in thickness, which originates from the 1980s. At that time, nanometer materials didn＇t have a proper development due to the economic level. t towever, with the support of science and technology, this technology has undergone tremendous changes in the related fields. There have been increasing expansion in the kinds and the width in use of the nanometer materials, so have the research of nanometer materials. In this paper, we will briefly analyze the application ofnanometer materials in the sports engineering.展开更多
文摘Discussed is a review and perspective of architecture, materials and process technology for dynamic random access memory(DRAM) applications. Key challenges of the transistor and capacitor scaling from DRAM will be reviewed. To continue scaling down, multi-gate devices with very thin silicon channels are most promising. Several architectures like Fin-field effect transistor(Fin-FET), Wafer bonded double gate and silicon on nothing(SON) gate-all-around have been demonstrated with good electrical characteristics. An overview of the evolution of capacitor technology is also presented from the early days of planar poly/insulator/silicon(PIS) capacitors to the metal/insulator/metal(MIM) capacitors used for today 50nm technology node and below. In comparing Ta2O5, HfO2 and Al2O3 as high-k dielectric for use in DRAM technology, Al2O3 is found to give a good compromise between capacitor performance and manufacturability used in MIM architecture.
文摘In the modern material engineering, the use of nanometer materials has entered the highly and intensively utilized stage, so new nanometer materials have been continuously found to replace the traditional ordinary materials. The so-called nanometer materials have the size within l - 100nm in thickness, which originates from the 1980s. At that time, nanometer materials didn＇t have a proper development due to the economic level. t towever, with the support of science and technology, this technology has undergone tremendous changes in the related fields. There have been increasing expansion in the kinds and the width in use of the nanometer materials, so have the research of nanometer materials. In this paper, we will briefly analyze the application ofnanometer materials in the sports engineering.
