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AM-OLED显示驱动芯片中内置SRAM的设计
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作者 曾龄宇 陈宏 秦路琳 《电子元器件应用》 2010年第12期27-30,共4页
详细描述了一种内置于AM-OLED显示驱动芯片中的单端口SRAM电路的设计方法,提出了一种解决SRAM访问时序冲突问题的仲裁算法。同时给出了基于0.18μm标准CMOS工艺设计的一款大小为320×240×18位的SRAM电路。通过Hspice仿真结果表... 详细描述了一种内置于AM-OLED显示驱动芯片中的单端口SRAM电路的设计方法,提出了一种解决SRAM访问时序冲突问题的仲裁算法。同时给出了基于0.18μm标准CMOS工艺设计的一款大小为320×240×18位的SRAM电路。通过Hspice仿真结果表明,该结构的动态功耗相对于传统结构可减小22.8%。 展开更多
关键词 低功耗位线结构 单端口 静态随机存取器 仲裁 显示驱动芯片
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Impacts of NBTI/PBTI on power gated SRAM
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作者 黄平 邢座程 《Journal of Central South University》 SCIE EI CAS 2013年第5期1298-1306,共9页
A signal probability and activity probability (SPAP) model was proposed firstly, to estimate the impacts of the negative bias temperature instability (NBTI) and positive bias temperature instability (PBTI) on power ga... A signal probability and activity probability (SPAP) model was proposed firstly, to estimate the impacts of the negative bias temperature instability (NBTI) and positive bias temperature instability (PBTI) on power gated static random access memory (SRAM). The experiment results show that PBTI has significant influence on the read and write operations of SRAM with power gating, and it deteriorates the NBTI effects and results in a up to 39.38% static noise margin reduction and a 35.7% write margin degradation together with NBTI after 106 s working time. Then, a circuit level simulation was used to verify the assumption of the SPAP model, and finally the statistic data of CPU2000 benchmarks show that the proposed model has a reduction of 3.85% for estimation of the SNM degradation after 106 s working time compared with previous work. 展开更多
关键词 negative bias temperature instability (NBTI) positive bias temperature instability (PBTI) static random access memory(SRAM) power gating
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Design of small-area and high-efficiency DC-DC converter for 1 T SRAM
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作者 LEE Jae-hyung 金丽妍 +4 位作者 余忆宁 JANG Ji-hye KIM Kwang-il HA Pan-bong KIM Young-hee 《Journal of Central South University》 SCIE EI CAS 2012年第2期417-423,共7页
The direct current-direct current (DC-DC) converter is designed for 1 T static random access memory (SRAM) used in display driver integrated circuits (ICs), which consists of positive word-line voltage (VpwL),... The direct current-direct current (DC-DC) converter is designed for 1 T static random access memory (SRAM) used in display driver integrated circuits (ICs), which consists of positive word-line voltage (VpwL), negative word-line voltage (VinyL) and half-VDD voltage (VHDo) generator. To generate a process voltage temperature (PVT)-insensitive VpWL and VNWL, a set of circuits were proposed to generate reference voltages using bandgap reference current generators for respective voltage level detectors. Also, a VOWL regulator and a VNWL charge pump were proposed for a small-area and low-power design. The proposed VpwL regulator can provide a large driving current with a small area since it regulates an input voltage (VCI) from 2.5 to 3.3 V. The VmvL charge pump can be implemented as a high-efficiency circuit with a small area and low power since it can transfer pumped charges to VNWL node entirely. The DC-DC converter for 1 T SRAM were designed with 0.11 μm mixed signal process and operated well with satisfactory measurement results. 展开更多
关键词 1 T-static random access memory direct current-direct current converter positive word-line voltage negative word-line voltage half- VDb generator
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Architecture design for reliable and reconfigurable FPGA-based GNC computer for deep space exploration 被引量:11
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作者 YANG MengFei LIU Bo +6 位作者 GONG Jian LIU HongJin HU HongKai DONG YangYang SHI Lei ZHAO YunFu MIAO ZhiFu 《Science China(Technological Sciences)》 SCIE EI CAS CSCD 2016年第2期289-300,共12页
SRAM(static random access memory)-based FPGA(field programmable gate array), owing to its large capacity, high performance, and dynamical reconfiguration, has become an attractive platform for So PC(system on programm... SRAM(static random access memory)-based FPGA(field programmable gate array), owing to its large capacity, high performance, and dynamical reconfiguration, has become an attractive platform for So PC(system on programmable chip) development. However, as the configuration memory and logic memory of the SRAM-based FPGA are highly susceptible to SEUs(single-event upsets) in deep space, it is a challenge to design and implement a highly reliable FPGA-based system for spacecraft, and no practical architecture has been proposed. In this paper, a new architecture for a reliable and reconfigurable FPGAbased computer in a highly critical GNC(guidance navigation and control) system is proposed. To mitigate the effect of an SEU on the system, multi-layer reconfiguration and multi-layer TMR(triple module redundancy) techniques are proposed, with a reliable reconfigurable real-time operating system(Space OS) managing the system level fault tolerance of the computer in the architecture. The proposed architecture for the reconfigurable FPGA-based computer has been implemented with COTS(commercial off the shelf) FPGA and has firstly been applied to the GNC system of a circumlunar return and reentry flight vehicle. The in-orbit results show that the proposed architecture is capable of meeting the requirements of high reliability and high availability, and can provide the expressive varying functionality and runtime flexibility for an FPGA-based GNC computer in deep space. 展开更多
关键词 fault tolerance system on programmable chip (SoPC) field programmable gate array (FPGA) multi-layer triple mod-ule redundancy intelligence reconfiguration
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Simulation of the characteristics of low-energy proton induced single event upset 被引量:2
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作者 GENG Chao XI Kai +1 位作者 LIU TianQi LIU Jie 《Science China(Physics,Mechanics & Astronomy)》 SCIE EI CAS 2014年第10期1902-1906,共5页
Monte Carlo simulation results are reported on the single event upset(SEU) triggered by the direct ionization effect of low-energy proton. The SEU cross-sections on the 45 nm static random access memory(SRAM) were com... Monte Carlo simulation results are reported on the single event upset(SEU) triggered by the direct ionization effect of low-energy proton. The SEU cross-sections on the 45 nm static random access memory(SRAM) were compared with previous research work, which not only validated the simulation approach used herein, but also exposed the existence of saturated cross-section and the multiple bit upsets(MBUs) when the incident energy was less than 1 MeV. Additionally, it was observed that the saturated cross-section and MBUs are involved with energy loss and critical charge. The amount of deposited charge and the distribution with respect to the critical charge as the supplemental evidence are discussed. 展开更多
关键词 single event upset PROTON direct ionization Monte Carlo
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