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高层建筑消火栓给水系统分区静水压力计算 被引量:5
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作者 陈礼洪 程宏伟 蒋柱武 《中国给水排水》 CAS CSCD 北大核心 2014年第15期54-56,共3页
正确计算分区静水压力是高层建筑消火栓给水系统合理分区的关键。分区最大静水压力与供水方式密切相关,在分析总结高层建筑消火栓给水系统各种供水方式的基础上,归纳提出3类分区静水压力的计算,并推导出分区最低消火栓静水压力计算公式... 正确计算分区静水压力是高层建筑消火栓给水系统合理分区的关键。分区最大静水压力与供水方式密切相关,在分析总结高层建筑消火栓给水系统各种供水方式的基础上,归纳提出3类分区静水压力的计算,并推导出分区最低消火栓静水压力计算公式和分区最高消火栓或分区减压阀组与最低消火栓高差计算公式。 展开更多
关键词 高层建筑 消火栓给水系统分区 供水方式 静水压力计算
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Hydrostatic pressure influence on magnetic phase diagram and structural parameters of SrTcO_3 from first-principles calculations 被引量:2
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作者 MA ChunLan ZANG TaoCheng WANG XiaoDan 《Science China(Physics,Mechanics & Astronomy)》 SCIE EI CAS 2012年第7期1253-1257,共5页
The effects of hydrostatic pressure of SrWeO3 are investigated by means of generalized gradient approximation (GGA) plus on-site Coulomb interaction corrections (GGA+U) method within the framework of density func... The effects of hydrostatic pressure of SrWeO3 are investigated by means of generalized gradient approximation (GGA) plus on-site Coulomb interaction corrections (GGA+U) method within the framework of density functional theory (DFT). Magnetic phase diagrams and structural parameters of SrTcO3 as a function of pressure are predicted. The magnetic ground state of SrTcO3 is found to keep in a G-type antiferromagnetic (G-AFM) structure under the pressure varying from 0 to 100 GPa. With the increase of the pressure, magnetic exchange energy increases, indicating a higher magnetic ordering temperature for SrTcO3 under a larger pressure. Besides the volume of the unit cell, lattice constants, and the bond length, the angles between typical Tc-O-Tc and Sr-O-Sr also decrease with the pressure, leading to strong structural distortions. Very obvious displace- ments of Sr and O atoms are observed under the pressure. Our work provides necessary understanding on electronic structures of SrTcO3 under high pressures. 展开更多
关键词 crystal structures SEMICONDUCTORS magnetic materials hydrostatic pressure first-principles calculations
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Effects of hydrostatic pressure and external electric field on the impurity binding energy in strained GaN/Al_xGa_(1-x)N spherical quantum dots 被引量:2
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作者 达来木仁 闫祖威 石磊 《Optoelectronics Letters》 EI 2012年第3期224-228,共5页
The binding energy and Stark effect energy shifts of a shallow donor impurity state in a strained GaN/AlxGa1-xN spherical finite-potential quantum dot (QD) are calculated using a variational method based on the effect... The binding energy and Stark effect energy shifts of a shallow donor impurity state in a strained GaN/AlxGa1-xN spherical finite-potential quantum dot (QD) are calculated using a variational method based on the effective mass approximation. The binding energy is computed as a function of dot size and hydrostatic pressure. The numerical results show that the binding energy of the impurity state increases, attains a maximum value, and then decreases as the QD radius increases for any electric field. Moreover, the binding energy increases with the pressure for any size of dot. The Stark shift of the impurity energy for large dot size is much larger than that for the small dot size, and it is enhanced by the increase of electric field. We compare the binding energy of impurity state with and without strain effects, and the results show that the strain effects enhance the impurity binding energy considerably, especially for the small QD size. We also take the dielectric mismatch into account in our work. 展开更多
关键词 Binding energy Electric fields GALLIUM Hydrostatic pressure Semiconductor quantum dots
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