The electrostatic discharge(ESD)protection circuit widely exists in the input and output ports of CMOS digital circuits,and fast rising time electromagnetic pulse(FREMP)coupled into the device not only interacts with ...The electrostatic discharge(ESD)protection circuit widely exists in the input and output ports of CMOS digital circuits,and fast rising time electromagnetic pulse(FREMP)coupled into the device not only interacts with the CMOS circuit,but also acts on the protection circuit.This paper establishes a model of on-chip CMOS electrostatic discharge protection circuit and selects square pulse as the FREMP signals.Based on multiple physical parameter models,it depicts the distribution of the lattice temperature,current density,and electric field intensity inside the device.At the same time,this paper explores the changes of the internal devices in the circuit under the injection of fast rising time electromagnetic pulse and describes the relationship between the damage amplitude threshold and the pulse width.The results show that the ESD protection circuit has potential damage risk,and the injection of FREMP leads to irreversible heat loss inside the circuit.In addition,pulse signals with different attributes will change the damage threshold of the circuit.These results provide an important reference for further evaluation of the influence of electromagnetic environment on the chip,which is helpful to carry out the reliability enhancement research of ESD protection circuit.展开更多
Recent studies have indicated that hypervelocity impacts by meteoroids and space debris can induce spacecraft anomalies. However, the basic physical process through which space debris impacts cause anomalies is not en...Recent studies have indicated that hypervelocity impacts by meteoroids and space debris can induce spacecraft anomalies. However, the basic physical process through which space debris impacts cause anomalies is not entirely clear. Currently, impact-generated plasma is thought to be the primary cause of electrical spacecraft anomalies, while the effects of impact-generated mechanical damage have rarely been researched. This paper presents new evidence showing that impact-generated mechanical damage strongly influences electrostatic discharge. Hypervelocity impact experiments were conducted in a plasma drag particle accelerator, using particles with diameters of 200–500 ?m and velocities of 2–7 km/s. The impact-generated mechanical damage on a specimen surface was measured by a stereoscopic microscope and 3D Profilometer and it indicated that microscopic irregularities around the impact crater could be responsible for local electric field enhancement. Furthermore, the influence of impact-generated mechanical damage on electrostatic discharge was simulated in an inverted potential gradient situation. The experimental results show that the electrostatic discharge voltage threshold was significantly reduced after the specimen was impacted by particles.展开更多
基金National Natural Science Foundation of China(61974116)。
文摘The electrostatic discharge(ESD)protection circuit widely exists in the input and output ports of CMOS digital circuits,and fast rising time electromagnetic pulse(FREMP)coupled into the device not only interacts with the CMOS circuit,but also acts on the protection circuit.This paper establishes a model of on-chip CMOS electrostatic discharge protection circuit and selects square pulse as the FREMP signals.Based on multiple physical parameter models,it depicts the distribution of the lattice temperature,current density,and electric field intensity inside the device.At the same time,this paper explores the changes of the internal devices in the circuit under the injection of fast rising time electromagnetic pulse and describes the relationship between the damage amplitude threshold and the pulse width.The results show that the ESD protection circuit has potential damage risk,and the injection of FREMP leads to irreversible heat loss inside the circuit.In addition,pulse signals with different attributes will change the damage threshold of the circuit.These results provide an important reference for further evaluation of the influence of electromagnetic environment on the chip,which is helpful to carry out the reliability enhancement research of ESD protection circuit.
文摘Recent studies have indicated that hypervelocity impacts by meteoroids and space debris can induce spacecraft anomalies. However, the basic physical process through which space debris impacts cause anomalies is not entirely clear. Currently, impact-generated plasma is thought to be the primary cause of electrical spacecraft anomalies, while the effects of impact-generated mechanical damage have rarely been researched. This paper presents new evidence showing that impact-generated mechanical damage strongly influences electrostatic discharge. Hypervelocity impact experiments were conducted in a plasma drag particle accelerator, using particles with diameters of 200–500 ?m and velocities of 2–7 km/s. The impact-generated mechanical damage on a specimen surface was measured by a stereoscopic microscope and 3D Profilometer and it indicated that microscopic irregularities around the impact crater could be responsible for local electric field enhancement. Furthermore, the influence of impact-generated mechanical damage on electrostatic discharge was simulated in an inverted potential gradient situation. The experimental results show that the electrostatic discharge voltage threshold was significantly reduced after the specimen was impacted by particles.
