O484.1 2004064347 宽角度入射600～700nm波段减反射薄膜的研究=Study of antireflection coatings of 600～700 nm at wide angle incidence[刊,中]/徐晓峰（中科院上海技物所.上海（200083））,张凤山…∥光学学报.—2004,24（9）.—1...O484.1 2004064347 宽角度入射600～700nm波段减反射薄膜的研究=Study of antireflection coatings of 600～700 nm at wide angle incidence[刊,中]/徐晓峰（中科院上海技物所.上海（200083））,张凤山…∥光学学报.—2004,24（9）.—1173-1176 阐述了利用非均匀膜系理论设计宽角度多层减反射薄膜的方法,从理论上分析了在宽角度情况下,偏振光产生透过率不同的原因。选取了Ta<sub>2</sub>O<sub>5</sub>和SiO<sub>2</sub>两种材料作为折射率材料,选取BK7作为基底材料模拟设计了光谱区在600～700nm波段、入射角为0°～80°之间的宽角度多层减反射薄膜,探索出了一条新型膜系设计的途径,其优化结果是较为理想的。图1参20（于晓光）展开更多
Cadmium sulfide(Cd S) buffer layers with the scale of 10 cm×10 cm are deposited by chemical bath deposition(CBD) with different temperatures and thiourea concentrations under low ammonia condition.There are obvio...Cadmium sulfide(Cd S) buffer layers with the scale of 10 cm×10 cm are deposited by chemical bath deposition(CBD) with different temperatures and thiourea concentrations under low ammonia condition.There are obvious hexagonal phases and cubic phases in Cd S thin films under the conditions of low temperature and high thiourea concentration.The main reason is that the heterogeneous reaction is dominant for homogeneous reaction.At low temperature,Cd S thin films with good uniformity and high transmittance are deposited by adjusting the thiourea concentration,and there is almost no precipitation in reaction solution.In addition,the low temperature is desired in assembly line.The transmittance and the band gap of Cd S thin films are above 80% and about 2.4 e V,respectively.These films are suitable for the buffer layers of large-scale Cu(In,Ga)Se2(CIGS) solar cells.展开更多
文摘O484.1 2004064347 宽角度入射600～700nm波段减反射薄膜的研究=Study of antireflection coatings of 600～700 nm at wide angle incidence[刊,中]/徐晓峰（中科院上海技物所.上海（200083））,张凤山…∥光学学报.—2004,24（9）.—1173-1176 阐述了利用非均匀膜系理论设计宽角度多层减反射薄膜的方法,从理论上分析了在宽角度情况下,偏振光产生透过率不同的原因。选取了Ta<sub>2</sub>O<sub>5</sub>和SiO<sub>2</sub>两种材料作为折射率材料,选取BK7作为基底材料模拟设计了光谱区在600～700nm波段、入射角为0°～80°之间的宽角度多层减反射薄膜,探索出了一条新型膜系设计的途径,其优化结果是较为理想的。图1参20（于晓光）
基金supported by the National High Technology Research and Development Program of China(No.2012AA050701)
文摘Cadmium sulfide(Cd S) buffer layers with the scale of 10 cm×10 cm are deposited by chemical bath deposition(CBD) with different temperatures and thiourea concentrations under low ammonia condition.There are obvious hexagonal phases and cubic phases in Cd S thin films under the conditions of low temperature and high thiourea concentration.The main reason is that the heterogeneous reaction is dominant for homogeneous reaction.At low temperature,Cd S thin films with good uniformity and high transmittance are deposited by adjusting the thiourea concentration,and there is almost no precipitation in reaction solution.In addition,the low temperature is desired in assembly line.The transmittance and the band gap of Cd S thin films are above 80% and about 2.4 e V,respectively.These films are suitable for the buffer layers of large-scale Cu(In,Ga)Se2(CIGS) solar cells.
