A novel approximation of the two-dimensional （2D） potential function perpendicular to the channel is proposed,and then an analytical threshold voltage model for a fully depleted SOI-MOSFET with a non-uniform Gaussia...A novel approximation of the two-dimensional （2D） potential function perpendicular to the channel is proposed,and then an analytical threshold voltage model for a fully depleted SOI-MOSFET with a non-uniform Gaussian distribution doping profile is given based on this approximation. The model agrees well with numerical simulation by MEDICI. The result represents a new way and some reference points in analyzing and controlling the threshold voltage of non-uniform fully depleted （FD） SOI devices in practice.展开更多
文摘A novel approximation of the two-dimensional （2D） potential function perpendicular to the channel is proposed,and then an analytical threshold voltage model for a fully depleted SOI-MOSFET with a non-uniform Gaussian distribution doping profile is given based on this approximation. The model agrees well with numerical simulation by MEDICI. The result represents a new way and some reference points in analyzing and controlling the threshold voltage of non-uniform fully depleted （FD） SOI devices in practice.
