Abstract: An amorphous silicon 16 - bit array photodetector with the a - SiC/a -Si heterojunction diode is presented. The fabrication processes of the device were studied systematically. By the optimum of the diode st...Abstract: An amorphous silicon 16 - bit array photodetector with the a - SiC/a -Si heterojunction diode is presented. The fabrication processes of the device were studied systematically. By the optimum of the diode structure and the preparation procedures, the diode with Id< 10 -12 A/mm2 and photocurrent Ip^0.35 A/W has been obtained at the wavelength of 632 nm.展开更多
Using a Taylor series expansion for the Fermi-Dirac occupation function,an accurate analytical model is developed for calculating the trapped-charge density in a-Si: H considering deep and tail states simultaneously w...Using a Taylor series expansion for the Fermi-Dirac occupation function,an accurate analytical model is developed for calculating the trapped-charge density in a-Si: H considering deep and tail states simultaneously without simplification.This is followed by the investigation of the relative errors of the localized trapped charge density in a-Si:H at all temperatures as a function of the quasi-Fermi level in the band gap calculated from three published analytical models and our above model. The results suggest that the relative errors of all these models increase notably as Efn is very closed to Ec(e.g.,-0.01 eV< Efn-Ec).It is also noticed that the relative errors of all above models become larger normally the greater is the value of temperature.A detailed analysis indicates that each model has its own applicability with various temperatures and various positions of the Fermi level.展开更多
文摘Abstract: An amorphous silicon 16 - bit array photodetector with the a - SiC/a -Si heterojunction diode is presented. The fabrication processes of the device were studied systematically. By the optimum of the diode structure and the preparation procedures, the diode with Id< 10 -12 A/mm2 and photocurrent Ip^0.35 A/W has been obtained at the wavelength of 632 nm.
文摘Using a Taylor series expansion for the Fermi-Dirac occupation function,an accurate analytical model is developed for calculating the trapped-charge density in a-Si: H considering deep and tail states simultaneously without simplification.This is followed by the investigation of the relative errors of the localized trapped charge density in a-Si:H at all temperatures as a function of the quasi-Fermi level in the band gap calculated from three published analytical models and our above model. The results suggest that the relative errors of all these models increase notably as Efn is very closed to Ec(e.g.,-0.01 eV< Efn-Ec).It is also noticed that the relative errors of all above models become larger normally the greater is the value of temperature.A detailed analysis indicates that each model has its own applicability with various temperatures and various positions of the Fermi level.
