一种新的求解带有非线性导体的麦克斯韦方程的有限元算法

本文引入U=tA,令电场E分解成E=-U-构造了一种新的基于势的有限元算法,用此算法求解了一类带指数的非线性导体的Maxwell方程,导体的非线性项为指数形式:σ(x,|E|)=|E|α-2,(0<α<1)。算法首先利用差分对时间进行离散,然后分两步循环求解U和,并给出收敛性和误差,最后通过两个数值实验验证了算法的可行性和有效性。

抽水蓄能发电机定子线棒端部电磁屏蔽研究

针对发电机定子线棒电磁屏蔽问题的瞬态电磁场分析,从理论上选择能够同时兼顾计算速度和计算精度的模型边界,分别建立同槽两根线棒、不同槽多根线棒计算模型,计算相邻线棒对电场分布的影响。同时建立单根线棒三维计算模型,计算分析线棒在轴向和法向上的场强分布特性。研究表明线棒在离开槽口后端部表面电位接近相电位,最大场强出现在高低阻带的搭接处。为改善场强和电位分布,提出改进表面场强分布的措施,在原高低阻搭接层增加敷设高阻材料和原设计方案保持一致,而原线棒高阻层涂敷低阻材料,可以大大抑制线棒端部的场强和电位。

All-Optical Sampling Using Nonlinear Polarization Rotation in a Single Semiconductor Optical Amplifier

We propose a novel all-optical sampling method using nonlinear polarization rotation in a semiconductor optical amplifier. A rate-equation model capable of describing the all-optical sampling mechanism is presented in this paper. Based on this model, we investigate the optimized operating parameters of the proposed system by simulating the output intensity of the probe light as functions of the input polarization angle, the phase induced by the polarization controller, and the ori- entation of the polarization beam splitter. The simulated results show that we can obtain a good linear slope and a large linear dynamic range,which is suitable for all-optical sampling. The operating power of the pump light can be less than lmW. The presented all-optical sampling method can potentially operate at a sampling rate up to hundreds GS/s and needs low optical power.

基于光电负反馈的光注入1550nm垂直腔面发射激光器产生窄线宽微波信号

基于1 550nm垂直腔面发射激光器在平行偏振光注入下呈现的单周期非线性动力学状态,进一步引入光电负反馈,得到了高质量的微波信号.实验研究结果表明:平行偏振光注入下,通过调节注入光的注入强度及频率,1 550nm垂直腔面发射激光器可呈现注入锁定、单周期、倍周期、混沌等多种非线性动力学状态;在合适的注入参量下,平行偏振光注入1 550nm垂直腔面发射激光器可产生光谱具有单边带结构、频率超过10GHz的光子微波信号,但该微波信号的线宽较宽(达MHz量级);进一步引入光电负反馈后,通过选取合适的光电反馈强度,可将该微波信号的线宽减小至一百多kHz(减小两个量级以上);在选择优化的反馈强度条件下,仅通过简单调节注入光强度,可实现窄线宽光子微波信号的频率在一定范围内连续可调谐.

Analysis of the One Dimensional Steady State Semiconductor Multijunction Device Model with the Avalanche Effect *

In this paper we consider the stationary multijunction device model with the avalanche effect. Using the singular perturbation method, an approximation to the current voltage curve is obtained. The cause and the condition for the occurrence of saturation current is analyzed. Especially, it is pointed that the avalanche effect is responsible for the blowing up of the saturation current. We prove the existence of multiple steady state solution when the ionization rate is relatively small. Finally, some numerical examples are presented to show the reliability of the theoretical results.

Experimental Study on Near-IR Nonlinear Optical Waveguide Sensor for Refractive Index of Liquids

To determine the refractive index of liquids in near infrared（lR）, a method is presented by measuring the output angle of the visible Cerenkov-radiation-mode when liquids are placed as the cover on a planar lithium niobate waveguide. The system configuration and the principle of the method are analyzed and some experimental results are given out. Both the experimental result and simulation show that this method is simple, rapid and of sufficient precision.

基于光注入半导体激光器单周期振荡的光子微波产生及全光线宽窄化

本文对基于光注入半导体激光器的单周期动力学态产生光子微波并利用光反馈压缩其线宽进行了实验研究.研究结果表明:通过适当调节注入参数,能对该方法产生的光子微波频率在数十GHz范围内进行连续、大范围地调节;通过引入光反馈并精细调节反馈强度,光子微波的线宽能够从40-100 MHz的范围被压缩约两个数量级至300-900 kHz范围;反馈长度对光子微波的线宽几乎没有影响,但当反馈长度精细变化时,光子微波频率会出现一定范围内的周期性漂移.

半导体光放大器超快相位特性的理论分析

针对目前对于半导体光放大器中的超快相位特性缺乏深入的理论分析、相关的物理机制还不清楚的现状,采用数值方式对半导体光放大器中的超快相位特性进行了详细的理论分析与解释.通过分析载流子加热、光谱烧孔等带内超快物理效应与载流子消耗等带间效应对相位贡献的物理机制的不同,并考虑到脉冲能量在相位响应中的作用,研究了半导体光放大器的相位响应特性.在分析相位响应特性的基础上,进一步解释了相位响应与增益响应存在时间延迟的原因,分析结果与已报道的实验测量结果相吻合.理论分析结果能够为超快光信号处理,如光波长、全光逻辑、光波长转换、光分插复用等提供理论指导.

Peristaltic transport of a conducting Jeffrey fluid in an inclined asymmetric channel

Peristaltic flow of a conducting Jeffrey fluid in an inclined asymmetric channel is investigated. The channel asymmetry is produced by considering a peristaltic wave train on the flexible walls of the channel with different amplitudes and phases. The nonlinear governing equations are solved analytically by a perturbation technique. The expressions for the stream function, axial velocity and the pressure rise per wavelength are determined in terms of the Jeffrey number λ1, the Froude number Fr, the perturbation parameter 5, the angle of inclination θ and the phase difference Ф. Effects of the physical parameters on the velocity field and the pumping characteristics are discussed. It is observed that the size of the trapping bolus increase with an increase in the magnetic parameter and the volume flow rate. That is, the magnetic parameter and the volume flow rate have strong influence on the trapping bolus phenomenon.

Ag4Hg（SeO3）2（SeO4）: a novel SHG material created in mixed valent selenium oxides by in situ synthesis

Explorations of new second harmonic generation materials in Ag^+-Hg^2+/Bi^3+-selenites systems afforded three new silver selenium oxides, namely, Ag4 Hg(SeO3)2(SeO4)(1), Ag2Bi2(SeO3)3(SeO4)(2) and Ag5 Bi(SeO3)4(3). They exhibit flexible crystal chemistry. Compounds 1 and 2 are mixed valence selenium oxides containing Se(IV) and Se(VI) cations simultaneously. Compounds 1 and 3 exhibit a 3 D open framework with 4-, 6-and 8-member polyhedral ring tunnels along a, b and c axes. Compound 1 crystallized in a polar space group and could display a subtle frequency doubling efficiency about 35% of the commercial KH2PO4(KDP). UV-vis-NIR spectra reveal that compounds 1–3 are wide-band semiconductors with the optical bandgaps of 3.11, 3.65, 3.58 e V respectively. Theoretical calculations disclose that compounds2 and 3 are indirect band gap structures and their bandgaps are determined by Ag, Bi, Se and O atoms together.

Wavelength conversion based on nonlinear polarization rotation in gain transparent SOA

We describe an all-optical wavelength conversion scheme for 1310 nm to 1550 nm based on nonlinear polarization rotation in a gain-transparent semiconductor optical amplifier （GT-SOA） which brings in the assistant light to improve the property of the converted light. From the SOA carder density equations, the 1310 nm-to-1550 nm wavelength conversion scheme is analyzed by the Jones matrix. The phase shift between TE and TM modes and the converted light are simulated at bit rate of 30 Gbit/s. We also analyze the influence of the input signal power, the injected current and the assistant light power on the extinction ratio of the converted li~,ht.

Piezotronic transistors in nonlinear circuit:Model and simulation

For the materials that simultaneously exhibit piezoelectric and semiconductor properties,such as wurtzite Zn O,Ga N and In N,as well as two-dimensional single Mo S2,piezoelectric charges induced by externally applied strain can tune/control carrier transport at a metal-semiconductor contact or semiconductor junction,which is named piezotronic effect.Metal-semiconductor-metal piezotronic transistors are key piezotronic nanodevices for electromechanical applications,and they are typical nonlinear elements.In this paper,a simplified current-voltage analysis solution of piezotronic transistors is developed,which can be used for circuit design and simulation.Furthermore,the typical nonlinear circuit:Chua's circuit based on piezotronic transistors is simulated.We find that the output signal of the piezotronic transistor circuit can be switched and changed asymmetrically by externally applied strain.This study provides insight into the nonlinear properties of the piezotronic transistor,as well as guidance for piezotronic transistor nonlinear circuit application.