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SiO_2对SnO_2·CoO·Nb_2O_5压敏电阻非线性电学性质的影响 被引量:5
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作者 陈洪存 王矜奉 +3 位作者 王勇军 李长鹏 张沛霖 钟维烈 《压电与声光》 CSCD 北大核心 2000年第6期379-381,共3页
对 Si O2 掺杂的 Sn O2 · Co O· Nb2 O5 压敏电阻非线性电学性质进行了研究 ,并对其微观结构进行了电镜扫描 ,且对其晶界势垒高度进行了测量。实验表明 x(Si O2 ) =0 .3%掺杂的 Sn O2 · Co O· Nb2 O5 压敏电阻的非... 对 Si O2 掺杂的 Sn O2 · Co O· Nb2 O5 压敏电阻非线性电学性质进行了研究 ,并对其微观结构进行了电镜扫描 ,且对其晶界势垒高度进行了测量。实验表明 x(Si O2 ) =0 .3%掺杂的 Sn O2 · Co O· Nb2 O5 压敏电阻的非线性系数 α高达 30 ,并且具有最高的击穿电场 (375 V/ mm)。采用 Gupta- Carlson缺陷模型对晶界肖特基势垒高度随Si O2 的添加而变大的现象进行了理论解释。 展开更多
关键词 压敏电阻 二氧化硅 非线性电学性质
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Electrical and nonlinear optical properties of TGZO transparent conducting films deposited by magnetron sputtering
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作者 ZHONG Zhiyou FENG Chaode +2 位作者 GU Jinhua LONG Hao YANG Chunyong 《中南民族大学学报(自然科学版)》 CAS 2024年第6期827-834,共8页
Thin transparent oxide conducting films(TCOFs)of titanium and gallium substituted zinc oxide(TGZO)were fabricated via radio frequency(RF)magnetron sputtering technique.The effects of RF power on electrical,linear and ... Thin transparent oxide conducting films(TCOFs)of titanium and gallium substituted zinc oxide(TGZO)were fabricated via radio frequency(RF)magnetron sputtering technique.The effects of RF power on electrical,linear and nonlinear optical characteristics were investigated by Hall tester,Ultraviolet(UV)-visible spectrophotometer and optical characterization method.The results indicate that RF power significantly influences the electrical and optical properties of the deposited films.As RF power raises,the resistivity and Urbach energy fall initially and then rise,while the figure of merit,mean visible transmittance and optical bandgap show the reverse variation trend.At RF power of 190 W,the TGZO sample exhibits the highest electro-optical properties,with the maximum figure of merit(1.14×10^(4)Ω^(-1)∙cm^(-1)),mean visible transmittance(86.9%)and optical bandgap(3.50 eV),the minimum resistivity(6.26×10^(-4)Ω∙cm)and Urbach energy(174.23 meV).In addition,the optical constants of the deposited films were determined by the optical spectrum fitting method,and the RF power dependence of nonlinear optical properties was studied.It is observed that all the thin films exhibit normal dispersion characteristics in the visible region,and the nonlinear optical parameters are greatly affected by the RF power in the ultraviolet region. 展开更多
关键词 doped ZnO thin films electro-optical performance nonlinear optical properties
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Theoretical study on stability and nonlinear optical properties of tetrahydropyrrole diradical and its isoelectronic systems in different electronic states
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作者 SUN XiaoNa QIU YongQing +3 位作者 SUN ShiLing LIU ChunGuang DU YanQing SU ZhongMin 《Science China Chemistry》 SCIE EI CAS 2011年第7期1086-1093,共8页
The polarizabilities and hyperpolarizabilities of the tetrahydropyrrole diradical in different electronic states have been investigated using ab initio and density functional theory (DFT) methods combined with the f... The polarizabilities and hyperpolarizabilities of the tetrahydropyrrole diradical in different electronic states have been investigated using ab initio and density functional theory (DFT) methods combined with the finite field (FF) approach. The polarizability average value as is a maximum for the singlet state, while that for the closed-shell is a minimum. The trend in second hyperpolarizability average value yis in good agreement with that for as The yvalues of the singlet and triplet states are, respectively, about 3 and 2 times larger than that of the closed-shell. The order of the first hyperpolarizability total effective value βtot is βot (closed shell) βtot (singlet) 〉 βtot (triplet). The as, βtot, and 7 values of different electronic states obtained using the B3LYP and MP4SDQ methods are close to those obtained using the reliable CCSD method. The nonlinear optical (NLO) properties of two systems isoelectronic with the tetrahydropyrrole diradical-cyclopentane and tetrahydrofuran diradicalsshow that the polarizabilities and hyperpolarizabilities of these systems are all smaller than those of the tetrahydropyrrole diradical in the three electronic states. 展开更多
关键词 RADICAL electronic state isoelectronic system NLO properties
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