Halide perovskite single crystals(HPSCs)provide a unique platform to study the optoelectronic properties of such emerging semiconductor materials,while the temperature induced crystal growth method often has an increa...Halide perovskite single crystals(HPSCs)provide a unique platform to study the optoelectronic properties of such emerging semiconductor materials,while the temperature induced crystal growth method often has an increased solute integration speed and/or unavoidable solute consumption,resulting in a soaring or slumping crystal growth rate of HPSCs.Here,we developed a universal and facile solvent-vola tilization-limited-growth(SVG)strategy to finely control the crystal growth rate by the fine-control-valve for high quality crystal grown through solution processes.The grown HPSCs by SVG method exhibited a record low trap density of 2.8×10^(8)cm^(-3)and a high charge carrier mobility-lifetime product(μτproduct)of 0.021 cm2/V,indicating the excellent crystal quality.The crystal surface defects were further passivated by oxygen suppliers as Lewis base,which led to a reduction of surface leakage current by two times when using for low dose rate X-ray detection.Such HPSC X-ray detector displayed a high sensitivity of 1274μC/(Gyair cm^(2))with a lowest detectable dose rate of 0.56μGyair/s under 120 keV hard X-ray.Further applications including alloy composition analysis and metal flaw detection by HPSC detectors were also demonstrated,which not only shows the bright future for product quality inspection and non-destructive materials analysis,but also paves the way for growing high quality single crystals and fabricating polycrystalline films.展开更多
基金the Fundamental Research Funds for the Central Universities,Jilin UniversityJilin University Scinece and Technology Innovation Research Team(2017TD-06)。
文摘Halide perovskite single crystals(HPSCs)provide a unique platform to study the optoelectronic properties of such emerging semiconductor materials,while the temperature induced crystal growth method often has an increased solute integration speed and/or unavoidable solute consumption,resulting in a soaring or slumping crystal growth rate of HPSCs.Here,we developed a universal and facile solvent-vola tilization-limited-growth(SVG)strategy to finely control the crystal growth rate by the fine-control-valve for high quality crystal grown through solution processes.The grown HPSCs by SVG method exhibited a record low trap density of 2.8×10^(8)cm^(-3)and a high charge carrier mobility-lifetime product(μτproduct)of 0.021 cm2/V,indicating the excellent crystal quality.The crystal surface defects were further passivated by oxygen suppliers as Lewis base,which led to a reduction of surface leakage current by two times when using for low dose rate X-ray detection.Such HPSC X-ray detector displayed a high sensitivity of 1274μC/(Gyair cm^(2))with a lowest detectable dose rate of 0.56μGyair/s under 120 keV hard X-ray.Further applications including alloy composition analysis and metal flaw detection by HPSC detectors were also demonstrated,which not only shows the bright future for product quality inspection and non-destructive materials analysis,but also paves the way for growing high quality single crystals and fabricating polycrystalline films.
