期刊文献+
共找到2篇文章
< 1 >
每页显示 20 50 100
基于体硅工艺的定位平台制作工艺分析 被引量:6
1
作者 王家畴 荣伟彬 +1 位作者 李昕欣 孙立宁 《光学精密工程》 EI CAS CSCD 北大核心 2008年第4期636-641,共6页
针对纳米定位平台的构型和定位精度问题,采用体硅加工技术成功地研制了一种基于单晶硅并带有位移检测功能的新型二自由度纳米级定位平台。介绍了定位平台的相关制作工艺,并对关键工艺进行了分析,总结了导致器件失效的主要原因,探讨了减... 针对纳米定位平台的构型和定位精度问题,采用体硅加工技术成功地研制了一种基于单晶硅并带有位移检测功能的新型二自由度纳米级定位平台。介绍了定位平台的相关制作工艺,并对关键工艺进行了分析,总结了导致器件失效的主要原因,探讨了减少失效的方法。同时,提出了一种可行的面内侧面压阻加工方法。通过对深度反应离子刻蚀(DRIE)工艺参数的调整,成功地刻蚀出大尺寸、大深宽比的结构释放窗口,释放了最小线宽为2.5μm,厚度为50μm的梳齿结构。 展开更多
关键词 体硅工艺 深度反应离子刻蚀 背片技术 面内侧面压阻 纳米级定位平台
下载PDF
A Silicon Integrated Micro Positioning xy-Stage for Nano-Manipulation
2
作者 王家畴 荣伟彬 +1 位作者 孙立宁 李欣昕 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2008年第10期1932-1938,共7页
An integrated micro positioning xy-stage with a 2mm × 2mm-area shuttle is fabricated for application in nano- meter-scale operation and nanometric positioning precision. It is mainly composed of a silicon-based x... An integrated micro positioning xy-stage with a 2mm × 2mm-area shuttle is fabricated for application in nano- meter-scale operation and nanometric positioning precision. It is mainly composed of a silicon-based xy-stage,electrostatics comb actuator,and a displacement sensor based on a vertical sidewall surface piezoresistor. They are all in a monolithic chip and developed using double-sided bulk-micromachining technology. The high-aspect-ratio comb-driven xy-stage is achieved by deep reactive ion etching (DRIE) in both sides of the wafer. The detecting piezoresistor is located at the vertical sidewall surface of the detecting beam to improve the sensitivity and displacement resolution of the piezoresistive sensors using the DRIE technology combined with the ion implantation technology. The experimental results verify the integrated micro positioning xy-stage design including the micro xy-stage, electrostatics comb actuator,and the vertical sidewall surface piezoresistor technique. The sensitivity of the fabricated piezoresistive sensors is better than 1.17mV/μm without amplification and the linearity is better than 0. 814%. Under 30V driving voltage, a ± 10vm single-axis displacement is measured without crosstalk and the resonant frequency is measured at 983Hz in air. 展开更多
关键词 MEMS integrated micro xy-stage electrostatics comb actuator vertical sidewall surface piezoresistor inplane
原文传递
上一页 1 下一页 到第
使用帮助 返回顶部