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Effect and mechanism of on-chip electrostatic discharge protection circuit under fast rising time electromagnetic pulse
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作者 Mao Xinyi Chai Changchun +3 位作者 Li Fuxing Lin Haodong Zhao Tianlong Yang Yintang 《强激光与粒子束》 CAS CSCD 北大核心 2024年第10期44-52,共9页
The electrostatic discharge(ESD)protection circuit widely exists in the input and output ports of CMOS digital circuits,and fast rising time electromagnetic pulse(FREMP)coupled into the device not only interacts with ... The electrostatic discharge(ESD)protection circuit widely exists in the input and output ports of CMOS digital circuits,and fast rising time electromagnetic pulse(FREMP)coupled into the device not only interacts with the CMOS circuit,but also acts on the protection circuit.This paper establishes a model of on-chip CMOS electrostatic discharge protection circuit and selects square pulse as the FREMP signals.Based on multiple physical parameter models,it depicts the distribution of the lattice temperature,current density,and electric field intensity inside the device.At the same time,this paper explores the changes of the internal devices in the circuit under the injection of fast rising time electromagnetic pulse and describes the relationship between the damage amplitude threshold and the pulse width.The results show that the ESD protection circuit has potential damage risk,and the injection of FREMP leads to irreversible heat loss inside the circuit.In addition,pulse signals with different attributes will change the damage threshold of the circuit.These results provide an important reference for further evaluation of the influence of electromagnetic environment on the chip,which is helpful to carry out the reliability enhancement research of ESD protection circuit. 展开更多
关键词 fast rising time electromagnetic pulse damage effect electrostatic discharge protection circuit damage location prediction
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Impact of Electric Vehicles on Travel and Electricity Demand in Metropolitan Area: A Case Study in Nagoya
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作者 Ryo Kanamori Takayuki Morikawa +2 位作者 Masaya Okumiya Toshiyuki Yamamoto Takayuki Ito 《Journal of Civil Engineering and Architecture》 2015年第3期341-349,共9页
In this study, we examine the impacts that EVs (electric vehicles) have on vehicle usage patterns and environmental improvements, using our integrated travel demand forecasting model, which can simulate an individua... In this study, we examine the impacts that EVs (electric vehicles) have on vehicle usage patterns and environmental improvements, using our integrated travel demand forecasting model, which can simulate an individual activity-travel behavior in each time period, as well as consider an induced demand by decreasing travel cost. In order to examine the effects that charging/discharging have on the demand in electricity, we analyze scenarios based on the simulation results of the EVs' parking location, parking duration and the battery state of charge. From the simulation, result under the ownership rate of EVs in the Nagoya metropolitan area in 2020 is about 6%, which turns out that the total CO2 emissions have decreased by 4% although the situation of urban transport is not changed. After calculating the electricity demand in each zone using architectural area and basic units of hourly power consumption, we evaluate the effect to decrease the peak load by V2G (vehicle-to-grid). According to the results, if EV drivers charge at home during the night and discharge at work during the day, the electricity demand in Nagoya city increases by approximately 1%, although changes in each individual zone range from -7% to +8%, depending on its characteristics. 展开更多
关键词 Electric vehicle integrated travel demand forecasting model electricity demand V2G.
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消除IR降的阴极保护电位测量方法及实际应用 被引量:7
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作者 颜达峰 刘乃勇 +2 位作者 袁鹏斌 舒江 李月娥 《煤气与热力》 2013年第8期1-3,共3页
对消除IR降的管道阴极保护电位测量方法进行比选,筛选出技术经济性较优的埋地试片法。对埋地试片法用于调整阴极保护站恒电位仪预置电位的工程应用进行了探讨。
关键词 IR降 阴极保护电位 埋地试片法 电位 预置电位
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