A 499.8 MHz SOLEIL-type superconducting cavity was simulated and designed for the first time in this paper.The higher-order mode(HOM)properties of the cavity were investigated.Two kinds of coaxial HOM couplers were de...A 499.8 MHz SOLEIL-type superconducting cavity was simulated and designed for the first time in this paper.The higher-order mode(HOM)properties of the cavity were investigated.Two kinds of coaxial HOM couplers were designed.Using 4 L-type and 4 T-type HOM couplers,the longitudinal impedance and the transverse impedances were suppressed to below 3 kΩand 30 kΩ/m,respectivly.The HOM damping requirements of Hefei Advanced Light Facility(HALF)were satisfied.This paper conducted an in-depth study on the radio frequency(RF)design,multipacting optimization,and thermal analysis of these coaxial couplers.Simulation results indicated that under operating acceleration voltage,the optimized couplers does not exhibit multiplicating or thermal breakdown phenomena.The cavity has the potential to reach a higher acceleration gradient.展开更多
The stereochemically active lone pairs around post-transition metal atoms play an important role in determining distorted lattice structure and optical response.The lone pair electrons are characterized by crystal orb...The stereochemically active lone pairs around post-transition metal atoms play an important role in determining distorted lattice structure and optical response.The lone pair electrons are characterized by crystal orbitals,electron localization function(ELF)and partial density of states(PDOS).Birefringence is evaluated by means of a Born effective charge approach based on modern polarization theory.The origin of the different responses of birefringence and second-harmonic generation(SHG)is explored,as well as the effect of spin-orbit coupling(SOC)on the band structure and optical properties is explored.The study of this paper can help to deeply understand the lone pairs and their contribution to optical property.展开更多
Codon usage is the selective and nonrandom use of synonymous codons to encode amino acids in genes for proteins. The analysis of codon usage may improve the understanding of cocion preferences between different specie...Codon usage is the selective and nonrandom use of synonymous codons to encode amino acids in genes for proteins. The analysis of codon usage may improve the understanding of cocion preferences between different species and allow to rebuild the codons of exogenous genes to increase the expression efficiency of exogenous genes, Here, codon DNA sequence （CDS） of four poplar species, including Populus tremuloides Michx., P. tomentosa Carr., P. deltoides Marsh., and P. trichocarpa Torr. ＆ Gray., is used to analyze the relative frequency of synonymous codon （RFSC）. High-frequency codons are selected by high-frequency （HF） codon analysis. The results indicate that the codon usage is common for all four poplar species and the codon preference is quite similar among the four poplar species. However, CCT encoding for Pro, and ACT coding for Thr are the preferred codons in P. tremuloides and P. tomentosa, whereas CCA coding for Pro, and ACA coding for Thr are preferred in P. deltoides and P. trichocarpa The codons such as TGC coding for Cys, TTC coding for Phe, and AAG coding for Lys, are preferred in the poplar species except P trichocarpa. GAG coding for Glu is preferred only in P deltoides, while the other three poplar species prefer to use GAA. The commonness of preferred codon allows exogenous gene designed by the preferred cocion of one of the different poplar species to be used in other poplar species.展开更多
A compact direct digital frequency synthesizer （DDFS） for system-on-chip implementation of the high precision rubidium atomic frequency standard is developed. For small chip size and low power consumption, the phase...A compact direct digital frequency synthesizer （DDFS） for system-on-chip implementation of the high precision rubidium atomic frequency standard is developed. For small chip size and low power consumption, the phase to sine mapping data is compressed using sine symmetry technique, sine-phase difference technique, quad line approximation technique,and quantization and error read only memory （QE-ROM） technique. The ROM size is reduced by 98% using these techniques. A compact DDFS chip with 32bit phase storage depth and a 10bit on-chip digital to analog converter has been successfully implemented using a standard 0.35μm CMOS process. The core area of the DDFS is 1.6mm^2. It consumes 167mW at 3.3V,and its spurious free dynamic range is 61dB.展开更多
Three kinds of coplanar waveguides （CPWs） are designed and fabricated on different silicon substrates---common low-resistivity silicon substrate （LRS）, LRS with a 3μm-thick silicon oxide interlayer, and high-resi...Three kinds of coplanar waveguides （CPWs） are designed and fabricated on different silicon substrates---common low-resistivity silicon substrate （LRS）, LRS with a 3μm-thick silicon oxide interlayer, and high-resistivity silicon （HRS） substrate. The results show that the microwave loss of a CPW on LRS is too high to be used, but it can be greatly reduced by adding a thick interlayer of silicon oxide between the CPW transmission lines and the LRS.A CPW directly on HRS shows a loss lower than 2dB/cm in the range of 0-26GHz and the process is simple,so HRS is a more suitable CPW substrate.展开更多
Lattice matched InP based InAlAs/InGaAs HEMTs with 120GHz cutoff frequency are reported.These devices demonstrate excellent DC characteristics:the extrinsic transconductance of 600mS/mm,the threshold voltage of -1 ...Lattice matched InP based InAlAs/InGaAs HEMTs with 120GHz cutoff frequency are reported.These devices demonstrate excellent DC characteristics:the extrinsic transconductance of 600mS/mm,the threshold voltage of -1 2V,and the maximum current density of 500mA/mm.展开更多
Lattice-matched In0.5 Ga0.47 As/In0.52 Al 0.48 As high electron mobility transistors （HEMTs） with a cutoff frequency （ft） as high as 218GHz are reported. This fT is the highest value ever reported for HEMTs in Chi...Lattice-matched In0.5 Ga0.47 As/In0.52 Al 0.48 As high electron mobility transistors （HEMTs） with a cutoff frequency （ft） as high as 218GHz are reported. This fT is the highest value ever reported for HEMTs in China. These devices also demonstrate excellent DC characteristics：the extrinsic transconductance is 980mS/mm and the maximum current density is 870mA/mm. The material structure and all the device fabrication technology in this work were developed by our group.展开更多
A series of microcrystalline silicon thin films were fabricated by very high frequency plasma enhanced chemical vapor deposition （VHF-PECVD） at different silane concentrations in a P chamber. Through analysis of the...A series of microcrystalline silicon thin films were fabricated by very high frequency plasma enhanced chemical vapor deposition （VHF-PECVD） at different silane concentrations in a P chamber. Through analysis of the structural and electrical properties of these materials,we conclude that the photosensitivity slightly decreased then increased as the silane concentration increased,while the crystalline volume fraction indicates the opposite change. Results of XRD indicate that thin films have a （220） preferable orientation under certain conditions. Microcrystalline silicon solar cells with conversion efficiency 4. 7% and micromorph tandem solar cells 8.5% were fabricated by VHF-PECVD （p layer and i layer of microcrystalline silicon solar cells were deposited in P chamber）, respectively.展开更多
The design and fabrication of a RF MEMS switch is reported for the first time in China.The switching element consists of a thin metallic membrane,which has the metal-isolator-metal contact and a capacitive shunt switc...The design and fabrication of a RF MEMS switch is reported for the first time in China.The switching element consists of a thin metallic membrane,which has the metal-isolator-metal contact and a capacitive shunt switch as single-pole single-throw.When an electrostatic potential is applied to the membrane and the bottom electrode,the attractive electrostatic force pulls the metal membrane down onto the bottom dielectric.The switch characteristics,such as insertion loss and isolation,depend on the off and on-capacitance.The test results are as follows:the pulldown voltage is about 20V;the insertion loss is less than 0 69dB from DC to 20GHz in the up-state;the isolation is more than 13dB from 14 to 18GHz and 16dB from 18 to 20GHz in the down-state.展开更多
By epitaxial layer structure design and key fabrication process optimization,a lattice-matched InP-based In0.53Ga0.47 As-In0.52Al0.48As HEMT with an ultra high maximum oscillation frequency （fmax） of 183GHz was fab-...By epitaxial layer structure design and key fabrication process optimization,a lattice-matched InP-based In0.53Ga0.47 As-In0.52Al0.48As HEMT with an ultra high maximum oscillation frequency （fmax） of 183GHz was fab- ricated. The fmax is the highest value for HEMTs in China. Also, the devices are reported, including the device structure, the fabrication process, and the DC and RF performances.展开更多
基金supported by the Fundamental Research Funds for the Central Universities(WK2310000098).
文摘A 499.8 MHz SOLEIL-type superconducting cavity was simulated and designed for the first time in this paper.The higher-order mode(HOM)properties of the cavity were investigated.Two kinds of coaxial HOM couplers were designed.Using 4 L-type and 4 T-type HOM couplers,the longitudinal impedance and the transverse impedances were suppressed to below 3 kΩand 30 kΩ/m,respectivly.The HOM damping requirements of Hefei Advanced Light Facility(HALF)were satisfied.This paper conducted an in-depth study on the radio frequency(RF)design,multipacting optimization,and thermal analysis of these coaxial couplers.Simulation results indicated that under operating acceleration voltage,the optimized couplers does not exhibit multiplicating or thermal breakdown phenomena.The cavity has the potential to reach a higher acceleration gradient.
基金supported by the National Natural Science Foundation of the People's Republic of China“Mechanistic study of the influence of ns^(2) cation intrinsic properties and coordination environment on birefringence and frequency doubling effects”(12264047),“The study of the mechanism of the influence of lead-oxygen polyhedra and their coordination environments on the gain of the frequency doubling effect”(11864040)Tianshan Talent Project of Xinjiang Uygur Autonomous Region of China“Design,synthesis and photofunctional study of novel rare earth phosphate materials”(2022TSYCJU0004)。
文摘The stereochemically active lone pairs around post-transition metal atoms play an important role in determining distorted lattice structure and optical response.The lone pair electrons are characterized by crystal orbitals,electron localization function(ELF)and partial density of states(PDOS).Birefringence is evaluated by means of a Born effective charge approach based on modern polarization theory.The origin of the different responses of birefringence and second-harmonic generation(SHG)is explored,as well as the effect of spin-orbit coupling(SOC)on the band structure and optical properties is explored.The study of this paper can help to deeply understand the lone pairs and their contribution to optical property.
基金This work was supported by the National Major Basic Research and Development Program(No.TG1999016004)Jiangsu Provincial Natural Science Foundation(No.BK2003213).
文摘Codon usage is the selective and nonrandom use of synonymous codons to encode amino acids in genes for proteins. The analysis of codon usage may improve the understanding of cocion preferences between different species and allow to rebuild the codons of exogenous genes to increase the expression efficiency of exogenous genes, Here, codon DNA sequence （CDS） of four poplar species, including Populus tremuloides Michx., P. tomentosa Carr., P. deltoides Marsh., and P. trichocarpa Torr. ＆ Gray., is used to analyze the relative frequency of synonymous codon （RFSC）. High-frequency codons are selected by high-frequency （HF） codon analysis. The results indicate that the codon usage is common for all four poplar species and the codon preference is quite similar among the four poplar species. However, CCT encoding for Pro, and ACT coding for Thr are the preferred codons in P. tremuloides and P. tomentosa, whereas CCA coding for Pro, and ACA coding for Thr are preferred in P. deltoides and P. trichocarpa The codons such as TGC coding for Cys, TTC coding for Phe, and AAG coding for Lys, are preferred in the poplar species except P trichocarpa. GAG coding for Glu is preferred only in P deltoides, while the other three poplar species prefer to use GAA. The commonness of preferred codon allows exogenous gene designed by the preferred cocion of one of the different poplar species to be used in other poplar species.
文摘A compact direct digital frequency synthesizer （DDFS） for system-on-chip implementation of the high precision rubidium atomic frequency standard is developed. For small chip size and low power consumption, the phase to sine mapping data is compressed using sine symmetry technique, sine-phase difference technique, quad line approximation technique,and quantization and error read only memory （QE-ROM） technique. The ROM size is reduced by 98% using these techniques. A compact DDFS chip with 32bit phase storage depth and a 10bit on-chip digital to analog converter has been successfully implemented using a standard 0.35μm CMOS process. The core area of the DDFS is 1.6mm^2. It consumes 167mW at 3.3V,and its spurious free dynamic range is 61dB.
文摘Three kinds of coplanar waveguides （CPWs） are designed and fabricated on different silicon substrates---common low-resistivity silicon substrate （LRS）, LRS with a 3μm-thick silicon oxide interlayer, and high-resistivity silicon （HRS） substrate. The results show that the microwave loss of a CPW on LRS is too high to be used, but it can be greatly reduced by adding a thick interlayer of silicon oxide between the CPW transmission lines and the LRS.A CPW directly on HRS shows a loss lower than 2dB/cm in the range of 0-26GHz and the process is simple,so HRS is a more suitable CPW substrate.
文摘Lattice matched InP based InAlAs/InGaAs HEMTs with 120GHz cutoff frequency are reported.These devices demonstrate excellent DC characteristics:the extrinsic transconductance of 600mS/mm,the threshold voltage of -1 2V,and the maximum current density of 500mA/mm.
文摘Lattice-matched In0.5 Ga0.47 As/In0.52 Al 0.48 As high electron mobility transistors （HEMTs） with a cutoff frequency （ft） as high as 218GHz are reported. This fT is the highest value ever reported for HEMTs in China. These devices also demonstrate excellent DC characteristics：the extrinsic transconductance is 980mS/mm and the maximum current density is 870mA/mm. The material structure and all the device fabrication technology in this work were developed by our group.
文摘A series of microcrystalline silicon thin films were fabricated by very high frequency plasma enhanced chemical vapor deposition （VHF-PECVD） at different silane concentrations in a P chamber. Through analysis of the structural and electrical properties of these materials,we conclude that the photosensitivity slightly decreased then increased as the silane concentration increased,while the crystalline volume fraction indicates the opposite change. Results of XRD indicate that thin films have a （220） preferable orientation under certain conditions. Microcrystalline silicon solar cells with conversion efficiency 4. 7% and micromorph tandem solar cells 8.5% were fabricated by VHF-PECVD （p layer and i layer of microcrystalline silicon solar cells were deposited in P chamber）, respectively.
文摘The design and fabrication of a RF MEMS switch is reported for the first time in China.The switching element consists of a thin metallic membrane,which has the metal-isolator-metal contact and a capacitive shunt switch as single-pole single-throw.When an electrostatic potential is applied to the membrane and the bottom electrode,the attractive electrostatic force pulls the metal membrane down onto the bottom dielectric.The switch characteristics,such as insertion loss and isolation,depend on the off and on-capacitance.The test results are as follows:the pulldown voltage is about 20V;the insertion loss is less than 0 69dB from DC to 20GHz in the up-state;the isolation is more than 13dB from 14 to 18GHz and 16dB from 18 to 20GHz in the down-state.
文摘By epitaxial layer structure design and key fabrication process optimization,a lattice-matched InP-based In0.53Ga0.47 As-In0.52Al0.48As HEMT with an ultra high maximum oscillation frequency （fmax） of 183GHz was fab- ricated. The fmax is the highest value for HEMTs in China. Also, the devices are reported, including the device structure, the fabrication process, and the DC and RF performances.
