A novel topology low-voltage high precision current reference based on subthreshold Metal-Oxide-Semiconductor Field Effect Transistors （MOSFETs） is presented. The circuit achieves a temperature-independent reference...A novel topology low-voltage high precision current reference based on subthreshold Metal-Oxide-Semiconductor Field Effect Transistors （MOSFETs） is presented. The circuit achieves a temperature-independent reference current by a proper combination current of two first-order temperature-compensation current references, which exploit the temperature characteristics of integrated poly2 resistors and the 1- V transconductance characteristics of MOSFET operating in the subthreshold region. The circuit, designed with the 1 st silicon 0.35 μm standard CMOS logic process technology, exhibits a stable current of about 2.25 μA with much low temperature coefficient of 3 × 10^-4μA/℃ in the temperature range of-40-150 ℃ at 1 V supply voltage, and also achieves a better power supply rejection ratio （PSRR） over a broad frequency. The PSRR is about -78 dB at DC and remains -42 dB at the frequency higher than 10 MHz. The maximal process error is about 6,7% based on the Monte Carlo simulation. So it has good process compatibility.展开更多
文摘A novel topology low-voltage high precision current reference based on subthreshold Metal-Oxide-Semiconductor Field Effect Transistors （MOSFETs） is presented. The circuit achieves a temperature-independent reference current by a proper combination current of two first-order temperature-compensation current references, which exploit the temperature characteristics of integrated poly2 resistors and the 1- V transconductance characteristics of MOSFET operating in the subthreshold region. The circuit, designed with the 1 st silicon 0.35 μm standard CMOS logic process technology, exhibits a stable current of about 2.25 μA with much low temperature coefficient of 3 × 10^-4μA/℃ in the temperature range of-40-150 ℃ at 1 V supply voltage, and also achieves a better power supply rejection ratio （PSRR） over a broad frequency. The PSRR is about -78 dB at DC and remains -42 dB at the frequency higher than 10 MHz. The maximal process error is about 6,7% based on the Monte Carlo simulation. So it has good process compatibility.
