Two kinds of thin-film SOI high voltage MOSFETs are developed.One is general structure,the other is novel two-drift-region structure.The gate width is 760μm,and the active area is 8.58×10 -2 mm 2.The experim...Two kinds of thin-film SOI high voltage MOSFETs are developed.One is general structure,the other is novel two-drift-region structure.The gate width is 760μm,and the active area is 8.58×10 -2 mm 2.The experiments show that the breakdown voltages of the two-drift-region and general structures are 26V and 17V,respectively,and the on resistances are 65Ω and 80Ω,respectively.展开更多
针对高压SiC模块的封装关键问题(即绝缘性能、寄生参数、热管理),该文提出多目标加权优化方法,实现6.5kV SiC MOSFET模块多个性能指标的折中和优化。首先,通过建立电、热、力多物理场有限元模型分别对量化指标寄生电容、焊料层热应力以...针对高压SiC模块的封装关键问题(即绝缘性能、寄生参数、热管理),该文提出多目标加权优化方法,实现6.5kV SiC MOSFET模块多个性能指标的折中和优化。首先,通过建立电、热、力多物理场有限元模型分别对量化指标寄生电容、焊料层热应力以及电场强度进行建模,并对三者进行加权优化,得到最优尺寸参数以保证6.5kV SiC MOSFET模块的整体性能;然后,通过对外壳和端子的设计,保证模块外部绝缘可靠的同时尽可能降低寄生电感,实现模块寄生电感和外部绝缘性能的折中;最后,通过双脉冲实验、耐压测试等验证所研制模块的性能优势及多目标加权优化方法的有效性。结果表明,所提研制模块能够在4 500V/14A的条件下可靠工作;在寄生参数、绝缘性能得到优化的同时,保证了模块整体性能的优越性。展开更多
文摘Two kinds of thin-film SOI high voltage MOSFETs are developed.One is general structure,the other is novel two-drift-region structure.The gate width is 760μm,and the active area is 8.58×10 -2 mm 2.The experiments show that the breakdown voltages of the two-drift-region and general structures are 26V and 17V,respectively,and the on resistances are 65Ω and 80Ω,respectively.
文摘针对高压SiC模块的封装关键问题(即绝缘性能、寄生参数、热管理),该文提出多目标加权优化方法,实现6.5kV SiC MOSFET模块多个性能指标的折中和优化。首先,通过建立电、热、力多物理场有限元模型分别对量化指标寄生电容、焊料层热应力以及电场强度进行建模,并对三者进行加权优化,得到最优尺寸参数以保证6.5kV SiC MOSFET模块的整体性能;然后,通过对外壳和端子的设计,保证模块外部绝缘可靠的同时尽可能降低寄生电感,实现模块寄生电感和外部绝缘性能的折中;最后,通过双脉冲实验、耐压测试等验证所研制模块的性能优势及多目标加权优化方法的有效性。结果表明,所提研制模块能够在4 500V/14A的条件下可靠工作;在寄生参数、绝缘性能得到优化的同时,保证了模块整体性能的优越性。
