Two kinds of thin-film SOI high voltage MOSFETs are developed.One is general structure,the other is novel two-drift-region structure.The gate width is 760μm,and the active area is 8.58×10 -2 mm 2.The experim...Two kinds of thin-film SOI high voltage MOSFETs are developed.One is general structure,the other is novel two-drift-region structure.The gate width is 760μm,and the active area is 8.58×10 -2 mm 2.The experiments show that the breakdown voltages of the two-drift-region and general structures are 26V and 17V,respectively,and the on resistances are 65Ω and 80Ω,respectively.展开更多
Carbon films prepared from pyrolyzation of spin-casted polyacrylonitrile （PAN） thin films display high electrical conductivity （〉600 S/cm, at 1000 ℃ carbonization）, low sheet resistance （about 100 Y2/square at ...Carbon films prepared from pyrolyzation of spin-casted polyacrylonitrile （PAN） thin films display high electrical conductivity （〉600 S/cm, at 1000 ℃ carbonization）, low sheet resistance （about 100 Y2/square at the PAN film thickness of 70 nm） and partial transmittance. These pyrolyzed PAN （PPAN） films were patterned as bottom electrodes by photolithography, and utilized as drain and source electrodes to fabricate organic field-effect transistor （OFET） devices with a p-type semiconductor （P3HT） and an n-type semiconductor （DPP-containing quinoidal small molecule） through a spin-coating procedure. The results showed that the devices with the PAN electrodes exhibited almost the same excellent performance without any further modification compared to those devices with traditional Au electrodes. Since these PPAN films had the advantages of low-cost, high performance, easier for large-area fabrication, thermal and chemical stability, it should be a promising electrode material for organic electrodes.展开更多
文摘Two kinds of thin-film SOI high voltage MOSFETs are developed.One is general structure,the other is novel two-drift-region structure.The gate width is 760μm,and the active area is 8.58×10 -2 mm 2.The experiments show that the breakdown voltages of the two-drift-region and general structures are 26V and 17V,respectively,and the on resistances are 65Ω and 80Ω,respectively.
基金supported by the Chinese Ministryof Science and Technology (2013CB632506, 2011CB932304)the Strategic Priority Research Program of the Chinese Academy of Sciences(XDB12000000)the National Natural Science Foundation of China(21290191, 21333011)
文摘Carbon films prepared from pyrolyzation of spin-casted polyacrylonitrile （PAN） thin films display high electrical conductivity （〉600 S/cm, at 1000 ℃ carbonization）, low sheet resistance （about 100 Y2/square at the PAN film thickness of 70 nm） and partial transmittance. These pyrolyzed PAN （PPAN） films were patterned as bottom electrodes by photolithography, and utilized as drain and source electrodes to fabricate organic field-effect transistor （OFET） devices with a p-type semiconductor （P3HT） and an n-type semiconductor （DPP-containing quinoidal small molecule） through a spin-coating procedure. The results showed that the devices with the PAN electrodes exhibited almost the same excellent performance without any further modification compared to those devices with traditional Au electrodes. Since these PPAN films had the advantages of low-cost, high performance, easier for large-area fabrication, thermal and chemical stability, it should be a promising electrode material for organic electrodes.
