Variations in the behavior of power supplies caused electrical behavior dependence with environmental conditions. by environmental conditions require accurate characterization of the This paper introduces models to he...Variations in the behavior of power supplies caused electrical behavior dependence with environmental conditions. by environmental conditions require accurate characterization of the This paper introduces models to help predict relative humidity （Rtt） and other environmental factors influence on sensitive circuitry in power electronic systems. The resistivity and permittivity of an insulator have been modeled using different water contents i.e. RH, such model also included the mechanical properties of the design. An application example of a high power density, high voltage DC-DC converter is used to verify the results.展开更多
As one of the main aerodynamic noise sources of high-speed trains, the pantograph is a complex structure containing many components, and the flow around it is extremely dynamic, with high-level turbulence. This study ...As one of the main aerodynamic noise sources of high-speed trains, the pantograph is a complex structure containing many components, and the flow around it is extremely dynamic, with high-level turbulence. This study analyzed the near-field unsteady flow around a pantograph using a large-eddy simulation(LES) with high-order finite difference schemes. The far-field aerodynamic noise from a pantograph was predicted using a computational fluid dynamics(CFD)/Ffowcs Williams-Hawkings(FW-H) acoustic analogy. The surface oscillating pressure data were also used in a boundary element method(BEM) acoustic analysis to predict the aerodynamic noise sources of a pantograph and the far-field sound radiation. The results indicated that the main aerodynamic noise sources of the pantograph were the panhead, base frame and knuckle. The panhead had the largest contribution to the far-field aerodynamic noise of the pantograph. The vortex shedding from the panhead generated tonal noise with the dominant peak corresponding to the vortex shedding frequency and the oscillating lift force exerted back on the fluid around the panhead.Additionally, the peak at the second harmonic frequency was associated with the oscillating drag force. The contribution of the knuckle-downstream direction to the pantograph aerodynamic noise was less than that of the knuckle-upstream direction of the pantograph, and the average sound pressure level(SPL) was 3.4 dBA. The directivity of the noise radiated exhibited a typical dipole pattern in which the noise directivity was obvious at the horizontal plane of θ=0°,the longitudinal plane of θ=120°,and the vertical plane of θ=90°.展开更多
AlGaN/GaN metal-insulator-semiconductor high electron-mobility transistors （MIS-HEMTs） with atomic layer deposited （ALD） NbA10 gate dielectric were investigated using 3 MeV proton irradiation at a fluence of 1015 ...AlGaN/GaN metal-insulator-semiconductor high electron-mobility transistors （MIS-HEMTs） with atomic layer deposited （ALD） NbA10 gate dielectric were investigated using 3 MeV proton irradiation at a fluence of 1015 p/crn2. It was found that the proton irradiation damage caused degradation in DC performance and a flatband voltage shift in the capacitance-voltage curve. Gate-drain conductance measurements indicated that new traps were introduced in GaN from the irradiation, and the trap densities increased from 1.18×10^12 cm-2.eV-1 to 1.82×10^12 cm-2.eV-1 in MIS-HEMTs after irradiation. However, these increases in trap densities caused by irradiation in MIS-HEMT are less than those in HEMT, which can be attributed to the protection of the A1GaN surface by the NbA10 dielectric layer.展开更多
文摘Variations in the behavior of power supplies caused electrical behavior dependence with environmental conditions. by environmental conditions require accurate characterization of the This paper introduces models to help predict relative humidity （Rtt） and other environmental factors influence on sensitive circuitry in power electronic systems. The resistivity and permittivity of an insulator have been modeled using different water contents i.e. RH, such model also included the mechanical properties of the design. An application example of a high power density, high voltage DC-DC converter is used to verify the results.
基金supported by the High-Speed Railway Basic Research Fund Key Project of China(Grant No.U1234208)the National Key Research and Development Program of China(Grant No.2016YFB1200403)+1 种基金the National Natural Science Foundation of China(Grant Nos.51475394&51605397)the Research Project of State Key Laboratory of Traction Power(Grant No.2016TPL_T02)
文摘As one of the main aerodynamic noise sources of high-speed trains, the pantograph is a complex structure containing many components, and the flow around it is extremely dynamic, with high-level turbulence. This study analyzed the near-field unsteady flow around a pantograph using a large-eddy simulation(LES) with high-order finite difference schemes. The far-field aerodynamic noise from a pantograph was predicted using a computational fluid dynamics(CFD)/Ffowcs Williams-Hawkings(FW-H) acoustic analogy. The surface oscillating pressure data were also used in a boundary element method(BEM) acoustic analysis to predict the aerodynamic noise sources of a pantograph and the far-field sound radiation. The results indicated that the main aerodynamic noise sources of the pantograph were the panhead, base frame and knuckle. The panhead had the largest contribution to the far-field aerodynamic noise of the pantograph. The vortex shedding from the panhead generated tonal noise with the dominant peak corresponding to the vortex shedding frequency and the oscillating lift force exerted back on the fluid around the panhead.Additionally, the peak at the second harmonic frequency was associated with the oscillating drag force. The contribution of the knuckle-downstream direction to the pantograph aerodynamic noise was less than that of the knuckle-upstream direction of the pantograph, and the average sound pressure level(SPL) was 3.4 dBA. The directivity of the noise radiated exhibited a typical dipole pattern in which the noise directivity was obvious at the horizontal plane of θ=0°,the longitudinal plane of θ=120°,and the vertical plane of θ=90°.
基金supported by the State Key Program and Major Program of National Natural Science Foundation of China (Grant Nos. 60736033 and 60890191)the Fundamental Research Funds for the Central Universities (Grant No. JY10000925002)
文摘AlGaN/GaN metal-insulator-semiconductor high electron-mobility transistors （MIS-HEMTs） with atomic layer deposited （ALD） NbA10 gate dielectric were investigated using 3 MeV proton irradiation at a fluence of 1015 p/crn2. It was found that the proton irradiation damage caused degradation in DC performance and a flatband voltage shift in the capacitance-voltage curve. Gate-drain conductance measurements indicated that new traps were introduced in GaN from the irradiation, and the trap densities increased from 1.18×10^12 cm-2.eV-1 to 1.82×10^12 cm-2.eV-1 in MIS-HEMTs after irradiation. However, these increases in trap densities caused by irradiation in MIS-HEMT are less than those in HEMT, which can be attributed to the protection of the A1GaN surface by the NbA10 dielectric layer.
