Modeling analysis of thin fully depleted SOICMOS technology has been done. Using ISETCAD software,the high temperature characteristics of an SOICMOS transistor were simulated in the temperature range of from 300 to 60...Modeling analysis of thin fully depleted SOICMOS technology has been done. Using ISETCAD software,the high temperature characteristics of an SOICMOS transistor were simulated in the temperature range of from 300 to 600K, and the whole circuit of a laser range finder was simulated with Verilog software. By wafer pro- cessing,a circuit of a laser range finder with complete function and parameters working at high temperatures has been developed. The simulated results agree with the test results. The test of the circuit function and parameters at normal and high temperature shows the realization of an SOICMOS integrated circuit with low power dissipation and high speed, which can be applied in laser range finding. By manufacturing this device, further study on high temperature characteristics of shorter channel SOICMOS integrated circuits can be conducted.展开更多
Abstract： This paper presents results from an on-going research project on pressure tolerant power electronics at SINTEF Energy Research, Norway. The driving force for this research is to enable power electronic comp...Abstract： This paper presents results from an on-going research project on pressure tolerant power electronics at SINTEF Energy Research, Norway. The driving force for this research is to enable power electronic components to operate in pressurized dielectric environment. The intended application is the converters for operation down to 3,000 meters ocean depth, primarily for subsea oil and gas processing. The paper focuses on the needed modifications to a general purpose gate driver for IGBT （insulated gate bipolar transistors） that will give pressure tolerance. Adaptations and modifications of the individual driver components are presented.The results from preliminary testing are promising, which shows that the considered adaptations give feasible solutions.展开更多
A novel level-shift LDMOS （lateral double-diffused metal oxide semiconductor） structure with the HV （high voltage） -interconnection for a 600 V-HVIC （high voltage integrated circuit） on thick SOI （silicon on in...A novel level-shift LDMOS （lateral double-diffused metal oxide semiconductor） structure with the HV （high voltage） -interconnection for a 600 V-HVIC （high voltage integrated circuit） on thick SOI （silicon on insulator） is proposed. There are two original points in the proposed structure. One is the formation of the double floating p-layers under the HV-interconnection to prevent potential distribution in the drift from disturbing due to the HV-interconnection, and the other is a good combination between the LDMOS structure and multiple trench isolation to obtain the isolation performance over 600 V. From the proposed structure, the high blocking capability of the LDMOS, including both off- and on-breakdown voltages over 600 V and high hot carrier instability, and the isolation performance over 1,200 V can be obtained successfully. This paper will show numerical and experimental results in detail.展开更多
基金Supported by the National Natural Science Foundation of China(61822407,62074161,62004213)the National Key Research and De-velopment Program of China under(2018YFE0125700)。
文摘Modeling analysis of thin fully depleted SOICMOS technology has been done. Using ISETCAD software,the high temperature characteristics of an SOICMOS transistor were simulated in the temperature range of from 300 to 600K, and the whole circuit of a laser range finder was simulated with Verilog software. By wafer pro- cessing,a circuit of a laser range finder with complete function and parameters working at high temperatures has been developed. The simulated results agree with the test results. The test of the circuit function and parameters at normal and high temperature shows the realization of an SOICMOS integrated circuit with low power dissipation and high speed, which can be applied in laser range finding. By manufacturing this device, further study on high temperature characteristics of shorter channel SOICMOS integrated circuits can be conducted.
文摘Abstract： This paper presents results from an on-going research project on pressure tolerant power electronics at SINTEF Energy Research, Norway. The driving force for this research is to enable power electronic components to operate in pressurized dielectric environment. The intended application is the converters for operation down to 3,000 meters ocean depth, primarily for subsea oil and gas processing. The paper focuses on the needed modifications to a general purpose gate driver for IGBT （insulated gate bipolar transistors） that will give pressure tolerance. Adaptations and modifications of the individual driver components are presented.The results from preliminary testing are promising, which shows that the considered adaptations give feasible solutions.
文摘A novel level-shift LDMOS （lateral double-diffused metal oxide semiconductor） structure with the HV （high voltage） -interconnection for a 600 V-HVIC （high voltage integrated circuit） on thick SOI （silicon on insulator） is proposed. There are two original points in the proposed structure. One is the formation of the double floating p-layers under the HV-interconnection to prevent potential distribution in the drift from disturbing due to the HV-interconnection, and the other is a good combination between the LDMOS structure and multiple trench isolation to obtain the isolation performance over 600 V. From the proposed structure, the high blocking capability of the LDMOS, including both off- and on-breakdown voltages over 600 V and high hot carrier instability, and the isolation performance over 1,200 V can be obtained successfully. This paper will show numerical and experimental results in detail.
