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基于高肖特基势垒的高导通电流隧穿场效应晶体管
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作者 赵瑞英 靳晓诗 《微处理机》 2022年第3期13-16,共4页
为改善双边栅和辅助栅控制的高肖特基势垒隧穿场效应晶体管性能,提出一种基于高肖特基势垒的高导通电流隧穿场效应晶体管。新设计的硅体被刻蚀成U型结构,通过刻蚀硅体两侧形成垂直插入式源漏接触,将源漏电极插入U型硅体两侧垂直部分的... 为改善双边栅和辅助栅控制的高肖特基势垒隧穿场效应晶体管性能,提出一种基于高肖特基势垒的高导通电流隧穿场效应晶体管。新设计的硅体被刻蚀成U型结构,通过刻蚀硅体两侧形成垂直插入式源漏接触,将源漏电极插入U型硅体两侧垂直部分的一定高度,使源漏接触附近带带隧穿产生区的有效面积显著增加,从而实现更高的开态电流。通过实验,将新结构与HSB-BTFET比较,表明HOSC-HSB-BTFET结构可以实现更高的开态电流、更低的反向漏电流、更小的亚阈值摆幅和更高的开关电流比。 展开更多
关键词 高肖特基势垒 导通电流 U型栅 亚阈值摆幅
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A BEEM Study on Effects of Annealing Temperature on Barrier Height Inhomogeneity of CoSi_2/Si Contact Formed in Co-Ti-Si Systems 被引量:1
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作者 竺士炀 屈新萍 +1 位作者 茹国平 李炳宗 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2002年第1期6-10,共5页
Ultra thin epitaxial CoSi 2 films are fabricated by solid state reaction of a deposited bilayer of Co(3nm)/Ti (1nm) on n Si(100) substrates at different temperatures.The local barrier heights of the CoSi 2/Si cont... Ultra thin epitaxial CoSi 2 films are fabricated by solid state reaction of a deposited bilayer of Co(3nm)/Ti (1nm) on n Si(100) substrates at different temperatures.The local barrier heights of the CoSi 2/Si contacts are determined by using the ballistic electron emission microscopy (BEEM) and its spectroscopy (BEES) at low temperature.For CoSi 2/Si contact annealed at 800℃,the spatial distribution of barrier heights,which have mean barrier height of 599meV and a standard deviation of 21meV,obeys the Gaussian Function.However,for a sample that is annealed at 700℃,the barrier heights of it are more inhomogenous.Its local barrier heights range from 152meV to 870meV,which implies the large inhomogeneity of the CoSi 2 film. 展开更多
关键词 BEEM schottky barrier height SILICIDE INHOMOGENEITY
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Characteristics of Schottky Barrier Junction Based on Hexagonal Microtube ZnO
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作者 GAOHui LIYan YANGLi-ping DENGHong 《Semiconductor Photonics and Technology》 CAS 2005年第2期85-88,106,共5页
Hexagonal microtube ZnO was firstly grown on single crystal p-Si (111) substrates by hydrothermal method, and fabricated Ag/n-ZnO and Au/n-ZnO Schottky junction. Schottky effective barrier heights were calculated by I... Hexagonal microtube ZnO was firstly grown on single crystal p-Si (111) substrates by hydrothermal method, and fabricated Ag/n-ZnO and Au/n-ZnO Schottky junction. Schottky effective barrier heights were calculated by I-V measurement. It is confirmed that the presence of a large amount of surface states related possibly to lattice imperfections existed near the surface leads to the pinning of the surface Fermi level at 0.35eV below the conduction-band edge. Then the fabricated Schottky barrier junctions are evaluated for their use as UV photodetectors. 展开更多
关键词 ZNO Schottky barrier junction Characteristic Barrier height Surface state UV photodetector Spectral responsivity
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Fabrication of a monolithic 4H-SiC junction barrier schottky diode with the capability of high current 被引量:2
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作者 SONG QingWen YUAN Hao +7 位作者 HAN Chao ZHANG YuMing TANG XiaoYan ZHANG YiMeng GUO Hui ZHANG YiMen JIA RenXu WANG YueHu 《Science China(Technological Sciences)》 SCIE EI CAS CSCD 2015年第8期1369-1374,共6页
There is a great interest in monolithic 4H-SiC Junction Barrier Schottky (JBS) diodes with the capability of a high forward current for industrial power applications. In this paper, we report large-area monolithic 4... There is a great interest in monolithic 4H-SiC Junction Barrier Schottky (JBS) diodes with the capability of a high forward current for industrial power applications. In this paper, we report large-area monolithic 4H-SiC JBS diodes fabricated on a 10 μm 4H-SiC epitaxial layer doped to 6×1015 cm-3. JBS diodes with an active area of 30 mm2 had a forward current of up to 330 A at a forward voltage of 5 V, which corresponds to a current density of 1100 A/cm2. A near ideal breakdown voltage of 1.6 kV was also achieved for a reverse current of up to 100 gA through the use of an optimum multiple floating guard rings (MFGR) termination, which is about 87.2% of the theoretical value. The differential specific-on resistance (RSP-ON) was meas- ured to be 3.3 mΩcm2, leading to a FOM (VB2/RSP-ON) value of 0.78 GW/cm2, which is very close to the theoretical limit of the tradeoff between the specific-on resistance and breakdown voltage for 4H-SiC unipolar devices. 展开更多
关键词 4H-SIC JBS current capability breakdown voltage
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