We have proposed a novel technique, 'low energy ion implantation + swift heavy ion irradiation', for synthesizing new structures in atom mixed materials. Recently, we used this technique to synthesize carbon-n...We have proposed a novel technique, 'low energy ion implantation + swift heavy ion irradiation', for synthesizing new structures in atom mixed materials. Recently, we used this technique to synthesize carbon-nitrides such as a and β-C3N4. As we know, the ratio of nitrogen (N-) to carbon (C-) atoms is one of the key parameters for synthesizing the phase a or β-C3N4. The ideal ratio of N- to C-atoms, N/C, is 4/3. However, this value could not be easily achieved on account of the solubility, diffusion and release of the nitrogen atoms展开更多
We have proposed a novel technique, 'low energy ion implantation+swift heavy ion irradiation', for synthesizing new structures in atom mixed materials. The schematic procedure of this technique is shown in Fig...We have proposed a novel technique, 'low energy ion implantation+swift heavy ion irradiation', for synthesizing new structures in atom mixed materials. The schematic procedure of this technique is shown in Fig.1. In detail, the original samples were prepared at first (1), and then they were implanted at room temperature (RT) with keV ions (2) after that irradiated at RT with high-energy heavy ions (3). After high-energy展开更多
In the present work, "low energy ion implantation+swift heavy ion irradiation" technique was used for studying new chemical bonds formation in N-doped diamond samples under high-energy heavy ion irradiations...In the present work, "low energy ion implantation+swift heavy ion irradiation" technique was used for studying new chemical bonds formation in N-doped diamond samples under high-energy heavy ion irradiations. The N-dopants were from 100 keV N-ion implantations at room temperature (RT) to doses 5×l017。展开更多
基金Supported by NSFC and the Chinese Academy of Sciences.
文摘We have proposed a novel technique, 'low energy ion implantation + swift heavy ion irradiation', for synthesizing new structures in atom mixed materials. Recently, we used this technique to synthesize carbon-nitrides such as a and β-C3N4. As we know, the ratio of nitrogen (N-) to carbon (C-) atoms is one of the key parameters for synthesizing the phase a or β-C3N4. The ideal ratio of N- to C-atoms, N/C, is 4/3. However, this value could not be easily achieved on account of the solubility, diffusion and release of the nitrogen atoms
基金Supported by NSFC and the Chinese Academy of Sciences.
文摘We have proposed a novel technique, 'low energy ion implantation+swift heavy ion irradiation', for synthesizing new structures in atom mixed materials. The schematic procedure of this technique is shown in Fig.1. In detail, the original samples were prepared at first (1), and then they were implanted at room temperature (RT) with keV ions (2) after that irradiated at RT with high-energy heavy ions (3). After high-energy
基金Supported by NSFC and the Chinese Academy of Sciences.
文摘In the present work, "low energy ion implantation+swift heavy ion irradiation" technique was used for studying new chemical bonds formation in N-doped diamond samples under high-energy heavy ion irradiations. The N-dopants were from 100 keV N-ion implantations at room temperature (RT) to doses 5×l017。
