High performance 150-nm gate-length metamorphic Al0.48In0.52As/Ga0.47In0.53 As high electron mobility transistors(mHEMTs) with very good device performance have been successfully fabricated.A T-shaped gate is fabricat...High performance 150-nm gate-length metamorphic Al0.48In0.52As/Ga0.47In0.53 As high electron mobility transistors(mHEMTs) with very good device performance have been successfully fabricated.A T-shaped gate is fabricated by using a combined technique of optical and e-beam photolithography,which is beneficial to decreasing parasitic capacitance and parasitic resistance of the gate.The ohmic contact resistance R c is as low as 0.03 mm when using a novel ohmic contact metal system(Ni/Ge/Ti/Au).The devices exhibit excellent DC and RF performance.A peak extrinsic transconductance of 775 mS/mm and a maximum drain current density of 720 mA/mm are achieved.The unity current gain cut-off frequency(fT) and the maximum oscillation frequency(f max) are 188.4 and 250 GHz,respectively.展开更多
基金supported by the National Natural Science Foundation of China(Grant Nos.61274026,60274077 and 60976068)the Scientific Research Fund of Hunan Provincial Education Department(Grant No. 10C0709)the Science and Technology Plan Foundation of Hunan Province(Grant No.2011GK3058)
文摘High performance 150-nm gate-length metamorphic Al0.48In0.52As/Ga0.47In0.53 As high electron mobility transistors(mHEMTs) with very good device performance have been successfully fabricated.A T-shaped gate is fabricated by using a combined technique of optical and e-beam photolithography,which is beneficial to decreasing parasitic capacitance and parasitic resistance of the gate.The ohmic contact resistance R c is as low as 0.03 mm when using a novel ohmic contact metal system(Ni/Ge/Ti/Au).The devices exhibit excellent DC and RF performance.A peak extrinsic transconductance of 775 mS/mm and a maximum drain current density of 720 mA/mm are achieved.The unity current gain cut-off frequency(fT) and the maximum oscillation frequency(f max) are 188.4 and 250 GHz,respectively.
