The strained SiGe material has been grown by using the newly developed High Vacuum/Rapid Thermal Processing/Chemical Vapor Deposition (HV/RTP/CVD) system.Device quality material is grown by handling process after car...The strained SiGe material has been grown by using the newly developed High Vacuum/Rapid Thermal Processing/Chemical Vapor Deposition (HV/RTP/CVD) system.Device quality material is grown by handling process after careful design. The Ge fraction varies up to 0 25, and the n and p type doping is well controlled,which are both adapted to the fabrication of Heterojunction Bipolar Transistors (HBT). The SiGe HBT structure, namely n Si/i p + i SiGe/n Si structure, has been investigated, with which, the HBTs are fabricated and show good performance. The new system has been proved potential and practicable.展开更多
文摘The strained SiGe material has been grown by using the newly developed High Vacuum/Rapid Thermal Processing/Chemical Vapor Deposition (HV/RTP/CVD) system.Device quality material is grown by handling process after careful design. The Ge fraction varies up to 0 25, and the n and p type doping is well controlled,which are both adapted to the fabrication of Heterojunction Bipolar Transistors (HBT). The SiGe HBT structure, namely n Si/i p + i SiGe/n Si structure, has been investigated, with which, the HBTs are fabricated and show good performance. The new system has been proved potential and practicable.
