高速半导体激光二极管的微波特性研究

本文通过测试器件的微波S参量,对半导体量子阱激光二极管的微波特性进行了深入的研究。在计及器件本身特性以及器件在微波频率下的寄生参量的前提下给出了器件微波等效电路和相应的数字模拟方法。由测量出的微波S_(11)参量建立适当的目标函数,选择正确的计算方法,成功地模拟出电路各参量。实际计算结果与测出的器件S_(11)参量比较,表明我们给出的等效电路是正确的,相应的计算方法是成功的。

1.3μm wide bandwidth semiconductor laser module

We have fabricated high speed 1.3μm InGaAsP/InP laser module with a CW 3-dB modulation bandwidth of 4 GHz under direct modulation and a threshold current less than 40 mA at room temperature.In this paper,the design,fabrication techniques and microwave package of module are described in detail,and the microwave and optoelectronic performances are discussed.