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Ohmic Contacts to n-Type Al_(0.6)Ga_(0.4)N for Solar-Blind Detectors
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作者 朱雁翎 杜江锋 +6 位作者 罗木昌 赵红 赵文伯 黄烈云 姬洪 于奇 杨谟华 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2008年第9期1661-1665,共5页
We investigate the contact characteristics of bi-layer thin films, Ti(20nm)/Al(200nm) on Si-doped n-type A10.6 Ga0.4 N films grown on sapphire substrate. The surface treatment was aqua regia boiling before metalli... We investigate the contact characteristics of bi-layer thin films, Ti(20nm)/Al(200nm) on Si-doped n-type A10.6 Ga0.4 N films grown on sapphire substrate. The surface treatment was aqua regia boiling before metallization and annealing after metallization at different conditions in N2 ambient. High resolution X-ray diffractometery analysis was carried out on the contacts and the surface interfaces of these conditions were compared. A specific contact resistivity pc was determined using the circular transmission line method via current-voltage measurements. A pc of 3.42 × 10^-4 Ω·cm^2 was achieved when annealed at 670℃ for 90s. Then, this ideal ohmic contact was used in back-illuminated solar-blind AlGaN p- i-n detectors and the detectors' performances, such as spectral responsivity, dark-current,and breakdown voltage were optimized. 展开更多
关键词 high-Al content n-algan ohmic contact ANNEAL back-illumination solar-blind p-i-n detector
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