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具有高阈值电压和超低栅漏电的400V常关型槽栅AlGaN/GaN金属氧化物半导体高电子迁移率晶体管(英文) 被引量:2
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作者 赵勇兵 程哲 +3 位作者 张韵 伊晓燕 王国宏 张雅希 《电工技术学报》 EI CSCD 北大核心 2018年第7期1472-1477,共6页
介绍了一种采用ICP干法刻蚀技术制备的槽栅常关型AlGaN/GaN金属氧化物半导体高电子迁移率晶体管(MOS-HEMT)。采用原子层淀积(ALD)实现40 nm的栅介质的沉积。槽栅常关型AlGaN/GaN MOS-HEMT的阈值电压为+4.3 V。在栅压时,槽栅常关型AlGaN/... 介绍了一种采用ICP干法刻蚀技术制备的槽栅常关型AlGaN/GaN金属氧化物半导体高电子迁移率晶体管(MOS-HEMT)。采用原子层淀积(ALD)实现40 nm的栅介质的沉积。槽栅常关型AlGaN/GaN MOS-HEMT的阈值电压为+4.3 V。在栅压时,槽栅常关型AlGaN/GaN MOS-HEMT饱和电流为0.71 A,特征导通电阻为5.73 m?·cm^2。在栅压时,器件的击穿电压为400 V,关断漏电流为320μA。器件的开启与关断电流比超过了109。在栅压为-20 V时,槽栅常关型AlGaN/GaN MOS-HEMT的栅漏电流为1.8 n A。高的开启与关断电流比和低的栅漏电流反映了界面具有很好的质量。 展开更多
关键词 ALGAN/GAN 高阈值电压 大栅压摆幅 常关型
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Objects Obtained by y Quanta Irradiation with Threshold Energy of 10 MeV of Pure Gaseous He, under High Pressure, in CuBe2 Apparatus 被引量:1
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作者 Roland Wisniewski Alexander Yu. Didyk Teresa Wilczyfiska-Kitowska 《Journal of Physical Science and Application》 2015年第4期268-276,共9页
A HeHPC (Helium high pressure chamber) filled up with pure gaseous helium at initial pressure about 1.1 bar was irradiated by braking γ-rays of 10 MeV threshold energy during 1.0 × 10^5 s at the electron beam ... A HeHPC (Helium high pressure chamber) filled up with pure gaseous helium at initial pressure about 1.1 bar was irradiated by braking γ-rays of 10 MeV threshold energy during 1.0 × 10^5 s at the electron beam current 22 - 24 μA. After irradiation, the residual pressure inside was equal to 430 bar. Synthesized foils of black color and other multiple objects were found inside the HeHPC mainly at the entrance window for γ-rays made from beryllium bronze as a plug of beryllium bronze HPC, at the inner surfaces of the reaction chamber made of high purity copper and at the copper collector. The element analysis, using SEM (Scanning electron microscopy) and MPRA (Microprobe roentgen analysis), allowed us to establish that the foils consist predominantly of carbon and the smaller quantities of other elements from carbon to iron. An explanation for the observed elements is suggested on the basis of helium fusion reactions under the action of y-rays with the reactions taking place in giant stars (thermally activated). The possible mechanism after 3α reaction is nα reactions and under barrier reactions. A second experiment with initial pressure of 3.05 kbar (with pressure drop by about 65 bar - after almost the same procedure of y-rays irradiation and with fully beryl bronze environment) suggests another possible nuclear reactions - He(Be, p)C, He(C, γ)O, and so on. The developed approach agrees well with a series of studies carried out by the authors where dense hydrogen and deuterium gases are acted on by γ-rays in the presence or absence of metals in the reaction chambers. 展开更多
关键词 IRRADIATION high pressure HELIUM PACS 25.20.Dc 25.45.De.
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