科学家制成新型小巧高阻电阻器
伦敦纳米技术中心的研究人员为量子电路制作出一种新型小巧的高阻电阻器,可使用于量子相位滑移电路（QPS）中。研究成果发布在12月14日的Journal of Applied Physics上。研究人员使用雾化喷射沉积技术制...科学家制成新型小巧高阻电阻器
伦敦纳米技术中心的研究人员为量子电路制作出一种新型小巧的高阻电阻器,可使用于量子相位滑移电路（QPS）中。研究成果发布在12月14日的Journal of Applied Physics上。研究人员使用雾化喷射沉积技术制作氧化铬薄层电阻。他们发现通过控制薄层中氧原子的成分浓度,能够调节氧化铬薄层的电阻,氧原子的成分越多,电阻阻值就越高。展开更多
In this paper, we present a terahertz (THz) band-stop filter realized by fabricating a metallic T-shaped resonator pattern on the high-resistivity silicon wafer. The filter exhibits two typical band-stop response char...In this paper, we present a terahertz (THz) band-stop filter realized by fabricating a metallic T-shaped resonator pattern on the high-resistivity silicon wafer. The filter exhibits two typical band-stop response characteristics depending on the incident direction of electric field with respect to the T-shaped resonator. When the long and the short arms of the T-shaped resonator were electrically polarized by changing the incident THz wave transmission directions, the corresponding central frequencies of the band-stop filter were found to be 0.436 THz at 42dB and 0.610 THz at 28 dB, respectively. Using three-dimensional (3D) finite-integral time-domain simulations, the band-stop filter was designed, which can operate in the wavelength between 0.2 and 0.8 THz. Experimental verification was also performed using a free space THz time-domain spectroscopy system. The band-stop response characteristics are in good agreement with the simulation results. The interesting THz band-stop filtering properties suggest a promising application in the modern THz communication systems, THz time-domain spectroscopic imaging and THz continuous wave imaging.展开更多
文摘科学家制成新型小巧高阻电阻器
伦敦纳米技术中心的研究人员为量子电路制作出一种新型小巧的高阻电阻器,可使用于量子相位滑移电路（QPS）中。研究成果发布在12月14日的Journal of Applied Physics上。研究人员使用雾化喷射沉积技术制作氧化铬薄层电阻。他们发现通过控制薄层中氧原子的成分浓度,能够调节氧化铬薄层的电阻,氧原子的成分越多,电阻阻值就越高。
基金supported by the National Natural Science Foundation of China (Grant Nos. 61171051, 50971094, 61072136)
文摘In this paper, we present a terahertz (THz) band-stop filter realized by fabricating a metallic T-shaped resonator pattern on the high-resistivity silicon wafer. The filter exhibits two typical band-stop response characteristics depending on the incident direction of electric field with respect to the T-shaped resonator. When the long and the short arms of the T-shaped resonator were electrically polarized by changing the incident THz wave transmission directions, the corresponding central frequencies of the band-stop filter were found to be 0.436 THz at 42dB and 0.610 THz at 28 dB, respectively. Using three-dimensional (3D) finite-integral time-domain simulations, the band-stop filter was designed, which can operate in the wavelength between 0.2 and 0.8 THz. Experimental verification was also performed using a free space THz time-domain spectroscopy system. The band-stop response characteristics are in good agreement with the simulation results. The interesting THz band-stop filtering properties suggest a promising application in the modern THz communication systems, THz time-domain spectroscopic imaging and THz continuous wave imaging.
