A high performance VHF power VDMOSFET,ap plying to the mobile communications,is developed,which can deliver an output power of 12W with the drain efficiency of 70% as well as the gain of 12dB at a low supply voltag...A high performance VHF power VDMOSFET,ap plying to the mobile communications,is developed,which can deliver an output power of 12W with the drain efficiency of 70% as well as the gain of 12dB at a low supply voltage of 12V and 175MHz.It is fabricated by using the terraced gat e structure and refractory molybdenum (Mo) gate technology.展开更多
3 sets of 500 MHz 300kW RF amplifiers to be used at the main ring of the Shanghai Synchrotron Radiation Facility (SSRF) have been installed on site.The Site Acceptance Test (SAT) of the first RF power source was compl...3 sets of 500 MHz 300kW RF amplifiers to be used at the main ring of the Shanghai Synchrotron Radiation Facility (SSRF) have been installed on site.The Site Acceptance Test (SAT) of the first RF power source was completed in last March.The second and third RF power sources are going well and will be finished in October.The type choice, the layout of the RF power sources and the comparison between the SAT conclusion and the design goals are presented.展开更多
文摘A high performance VHF power VDMOSFET,ap plying to the mobile communications,is developed,which can deliver an output power of 12W with the drain efficiency of 70% as well as the gain of 12dB at a low supply voltage of 12V and 175MHz.It is fabricated by using the terraced gat e structure and refractory molybdenum (Mo) gate technology.
文摘3 sets of 500 MHz 300kW RF amplifiers to be used at the main ring of the Shanghai Synchrotron Radiation Facility (SSRF) have been installed on site.The Site Acceptance Test (SAT) of the first RF power source was completed in last March.The second and third RF power sources are going well and will be finished in October.The type choice, the layout of the RF power sources and the comparison between the SAT conclusion and the design goals are presented.
