Lattice matched InP based InAlAs/InGaAs HEMTs with 120GHz cutoff frequency are reported.These devices demonstrate excellent DC characteristics:the extrinsic transconductance of 600mS/mm,the threshold voltage of -1 ...Lattice matched InP based InAlAs/InGaAs HEMTs with 120GHz cutoff frequency are reported.These devices demonstrate excellent DC characteristics:the extrinsic transconductance of 600mS/mm,the threshold voltage of -1 2V,and the maximum current density of 500mA/mm.展开更多
Lattice-matched In0.5 Ga0.47 As/In0.52 Al 0.48 As high electron mobility transistors （HEMTs） with a cutoff frequency （ft） as high as 218GHz are reported. This fT is the highest value ever reported for HEMTs in Chi...Lattice-matched In0.5 Ga0.47 As/In0.52 Al 0.48 As high electron mobility transistors （HEMTs） with a cutoff frequency （ft） as high as 218GHz are reported. This fT is the highest value ever reported for HEMTs in China. These devices also demonstrate excellent DC characteristics：the extrinsic transconductance is 980mS/mm and the maximum current density is 870mA/mm. The material structure and all the device fabrication technology in this work were developed by our group.展开更多
By epitaxial layer structure design and key fabrication process optimization,a lattice-matched InP-based In0.53Ga0.47 As-In0.52Al0.48As HEMT with an ultra high maximum oscillation frequency （fmax） of 183GHz was fab-...By epitaxial layer structure design and key fabrication process optimization,a lattice-matched InP-based In0.53Ga0.47 As-In0.52Al0.48As HEMT with an ultra high maximum oscillation frequency （fmax） of 183GHz was fab- ricated. The fmax is the highest value for HEMTs in China. Also, the devices are reported, including the device structure, the fabrication process, and the DC and RF performances.展开更多
High frequency performance limits of graphene field-effect transistors （FETs） down to a channel length of 20 nm have been examined by using self-consistent quantum simulations. The results indicate that although Kle...High frequency performance limits of graphene field-effect transistors （FETs） down to a channel length of 20 nm have been examined by using self-consistent quantum simulations. The results indicate that although Klein band-to-band tunneling is significant for sub-100 nm graphene FETs, it is possible to achieve a good transconductance and ballistic on-off ratio larger than 3 even at a channel length of 20 nm. At a channel length of 20 nm, the intrinsic cut-off frequency remains at a few THz for various gate insulator thickness values, but a thin gate insulator is necessary for a good transconductance and smaller degradation of cut-off frequency in the presence of parasitic capacitance. The intrinsic cut-off frequency is close to the LC characteristic frequency set by graphene kinetic inductance （L） and quantum capacitance （C）, which is about 100 GHz-um divided by the gate length.展开更多
文摘Lattice matched InP based InAlAs/InGaAs HEMTs with 120GHz cutoff frequency are reported.These devices demonstrate excellent DC characteristics:the extrinsic transconductance of 600mS/mm,the threshold voltage of -1 2V,and the maximum current density of 500mA/mm.
文摘Lattice-matched In0.5 Ga0.47 As/In0.52 Al 0.48 As high electron mobility transistors （HEMTs） with a cutoff frequency （ft） as high as 218GHz are reported. This fT is the highest value ever reported for HEMTs in China. These devices also demonstrate excellent DC characteristics：the extrinsic transconductance is 980mS/mm and the maximum current density is 870mA/mm. The material structure and all the device fabrication technology in this work were developed by our group.
文摘By epitaxial layer structure design and key fabrication process optimization,a lattice-matched InP-based In0.53Ga0.47 As-In0.52Al0.48As HEMT with an ultra high maximum oscillation frequency （fmax） of 183GHz was fab- ricated. The fmax is the highest value for HEMTs in China. Also, the devices are reported, including the device structure, the fabrication process, and the DC and RF performances.
文摘High frequency performance limits of graphene field-effect transistors （FETs） down to a channel length of 20 nm have been examined by using self-consistent quantum simulations. The results indicate that although Klein band-to-band tunneling is significant for sub-100 nm graphene FETs, it is possible to achieve a good transconductance and ballistic on-off ratio larger than 3 even at a channel length of 20 nm. At a channel length of 20 nm, the intrinsic cut-off frequency remains at a few THz for various gate insulator thickness values, but a thin gate insulator is necessary for a good transconductance and smaller degradation of cut-off frequency in the presence of parasitic capacitance. The intrinsic cut-off frequency is close to the LC characteristic frequency set by graphene kinetic inductance （L） and quantum capacitance （C）, which is about 100 GHz-um divided by the gate length.
