Initialization and initial imbalance problem were discussed in the context of a three-dimensional variational data assimilation system of the new generation"Weather Research and Forecasting Model". Several o...Initialization and initial imbalance problem were discussed in the context of a three-dimensional variational data assimilation system of the new generation"Weather Research and Forecasting Model". Several options of digital filter initialization have been tested with a rain storm case. It is shown that digital filter initialization, especially diabatic digital filter initialization and twice digital filter initialization, have effectively removed spurious high frequency noise from initial data for numerical weather prediction and produced balanced initial conditions. For six consecutive intermittent data assimilation cycles covering a 3-day period, mean initialization increments and impact on forecast variables are studied. DFI has been demonstrated to provide better adjustment of the hydrometeors and vertical velocity, reduced spin-up time, and improved forecast variables quantity.展开更多
Metamorphic Al0.50In0.50As/Ga0.47In0.53As high electron mobility transistors (mHEMTs) grown by Metal Organic ChemicalVapor Deposition (MOCVD) on n-type silicon substrates with introduction of a novel multi-stage buffe...Metamorphic Al0.50In0.50As/Ga0.47In0.53As high electron mobility transistors (mHEMTs) grown by Metal Organic ChemicalVapor Deposition (MOCVD) on n-type silicon substrates with introduction of a novel multi-stage buffering stack scheme havebeen fabricated for the first time. 1.0- m-gate-length depletion-mode mHEMTs with maximum transconductance up to 613mS/mm are achieved. The unity current gain cut-off frequency (fT) and the maximum oscillation frequency (fmax) are 36.9 and55.6 GHz, respectively. This device has the highest fTyet reported for 1.0- m-gate-length HEMTs grown on silicon byMOCVD. Also, this performance is comparable to that of similar GaAs-based mHEMTs. These are encouraging initial resultsleading to the manufacturing potential of integrated high-speed metamorphic devices for logic applications on silicon sub-strates by MOCVD.展开更多
基金National Natural Science Foundation of China (40675020)
文摘Initialization and initial imbalance problem were discussed in the context of a three-dimensional variational data assimilation system of the new generation"Weather Research and Forecasting Model". Several options of digital filter initialization have been tested with a rain storm case. It is shown that digital filter initialization, especially diabatic digital filter initialization and twice digital filter initialization, have effectively removed spurious high frequency noise from initial data for numerical weather prediction and produced balanced initial conditions. For six consecutive intermittent data assimilation cycles covering a 3-day period, mean initialization increments and impact on forecast variables are studied. DFI has been demonstrated to provide better adjustment of the hydrometeors and vertical velocity, reduced spin-up time, and improved forecast variables quantity.
文摘Metamorphic Al0.50In0.50As/Ga0.47In0.53As high electron mobility transistors (mHEMTs) grown by Metal Organic ChemicalVapor Deposition (MOCVD) on n-type silicon substrates with introduction of a novel multi-stage buffering stack scheme havebeen fabricated for the first time. 1.0- m-gate-length depletion-mode mHEMTs with maximum transconductance up to 613mS/mm are achieved. The unity current gain cut-off frequency (fT) and the maximum oscillation frequency (fmax) are 36.9 and55.6 GHz, respectively. This device has the highest fTyet reported for 1.0- m-gate-length HEMTs grown on silicon byMOCVD. Also, this performance is comparable to that of similar GaAs-based mHEMTs. These are encouraging initial resultsleading to the manufacturing potential of integrated high-speed metamorphic devices for logic applications on silicon sub-strates by MOCVD.
