On capped Higgs positivity cone

The Wilson coefficients of the standard model effective field theory are subject to a series of positivity bounds.It has been shown that while the positivity part of the ultraviolet(UV)partial wave unitarity leads to the Wilson coefficients living in a convex cone,further including the nonpositivity part caps the cone from above.For Higgs scattering,a capped positivity cone was obtained using a simplified,linear unitarity condition without utilizing the full internal symmetries of Higgs scattering.Here,we further implement stronger nonlinear unitarity conditions from the UV,which generically gives rise to better bounds.We show that,for the Higgs case in particular,while the nonlinear unitarity conditions per se do not enhance the bounds,the fuller use of the internal symmetries do shrink the capped positivity cone significantly.

泛函积分中的Feynman规则

基于相空间中Ｇｒｅｅｎ函数的生成泛函，采用鞍点近似．证明了树图近似下，顶角的生成泛函等于正则作用量．勿需作出生成泛函中对正则动量的泛函积分，就可导出树图近似下的Ｆｅｙｎｍａｎ规则。对一场论的拉氏量添加一个四维散度项，虽然不改变其经典场方程，但其量子系统的性质发生了变化．

Bipolar Theory of MOS Field-Effect Transistors and Experiments

The bipolar theory of field-effect transistor is introduced to replace the 55-year-old classic unipolar theory invented by Shockley in 1952 in order to account for the characteristics observed in recent double-gate nanometer silicon MOS field-effect transistors. Two electron and two hole surface channels are simultaneously present in all channel current ranges. Output and transfer characteristics are computed over practical base and gate oxide thicknesses. The bipolar theory corroborates well with experimental data reported recently for FinFETs with metal/silicon and p/n junction source/drain contacts. Single-device realization of CMOS inverter and SRAM memory circuit functions are recognized.

The Bipolar Theory of the Field-Effect Transistor:X.The Fundamental Physics and Theory(All Device Structures)

This paper describes the foundation underlying the device physics and theory of the semiconductor field effect transistor which is applicable to any devices with two carrier species in an electric field. The importance of the boundary conditions on the device current-voltage characteristics is discussed. An illustration is given of the transfer DCIV characteristics computed for two boundary conditions,one on electrical potential,giving much higher drift-limited parabolic current through the intrinsic transistor, and the other on the electrochemical potentials, giving much lower injection-over-thebarrier diffusion-limited current with ideal 60mV per decade exponential subthreshold roll-off, simulating electron and hole contacts. The two-MOS-gates on thin pure-body silicon field-effect transistor is used as examples

The Bipolar Field-Effect Transistor:Ⅰ.Electrochemical Current Theory(Two-MOS-Gates on Pure-Base)

This paper describes the bipolar field-effect transistor （BiFET） and its theory. Analytical solution is ob- tained from partitioning the two-dimensional transistor into two one-dimensional transistors. The analysis employs the parametric surface-electric-potential and the electrochemical （quasi-Fermi） potential-gradient driving force to compute the current. Output and transfer D. C. current and conductance versus voltage are presented over practi- cal ranges of terminal D. C. voltages and device parameters. Electron and hole surface channel currents are pres- ent simultaneously, a new feature which could provide circuit functions in one physical transistor such as the CMOS inverter and SRAM memory.

The Bipolar Field-Effect Transistor: III.Short Channel Electrochemical Current Theory (Two-MOS-Gates on Pure-Base)

This paper describes the short channel theory of the bipolar field-effect transistor （BiFET） by partitioning the transistor into two sections,the source and drain sections,each can operate as the electron or hole emitter or collector under specific combinations of applied terminal voltages. Analytical solution is obtained in the source and drain sections by separating the two-dimensional trap-free Shockley Equations into two one-dimensional equations parametrically coupled via the surface-electric-potential and by using electron current continuity and hole current continuity at the boundary between the emitter and collector sections. Total and electron-hole-channel components of the output and transfer currents and conductances, and the electrical lengths of the two sections are computed and presented in graphs as a function of the D. C. terminal voltages for the model transistor with two identical and connected metal-oxide-silicon-gates （MOS-gates） on a thin pure-silicon base over practical ranges of thicknesses of the silicon base and gate oxide. Deviations of the long physical channel currents and conductances from those of the short electrical channels are reported.

The Bipolar Field-Effect Transistor:Ⅳ.Short Channel Drift-Diffusion Current Theory(Two-MOS-Gates on Pure-Base)

This paper gives the short channel analytical theory of the bipolar field-effect transistor （BiFET） with the drift and diffusion currents separately computed in the analytical theory. As in the last-month paper which represented the drift and diffusion current by the single electrochemical （potential-gradient） current, the two-dimensional transistor is partitioned into two sections, the source and drain sections, each can operate as the electron or hole emitter or collector under specific combinations of applied terminal voltages. Analytical solution is then obtained in the source and drain sections by separating the two-dimensional trap-free Shockley Equations into two one-dimensional equations parametrically coupled via the surface-electric-potential and by using electron current continuity and hole current continuity at the boundary between the emitter and collector sections. Total and the drift and diffusion components of the electron-channel and hole-channel currents and output and transfer conductances, and the electrical lengths of the two sections are computed and presented in graphs as a function of the D. C. terminal voltages for the model transistor with two identical and connected metal-oxide-silicon-gates （MOS-gates） on a thin pure-silicon base over practical ranges of thicknesses of the silicon base and gate oxide. Deviations of the two-section short-channel theory from the one-section long-channel theory are described.

The Theory of Field-Effect Transistors:XI. The Bipolar Electrochemical Currents(1-2-MOS-Gates on Thin-Thick Pure-Impure Base)

The field-effect transistor is inherently bipolar, having simultaneously electron and hole surface and volume channels and currents. The channels and currents are controlled by one or more externally applied transverse electric fields. It has been known as the unipolar field-effect transistor for 55-years since Shockley＇s 1952 invention,because the electron-current theory inevitably neglected the hole current from over-specified internal and boundary conditions, such as the electrical neutrality and the constant hole-electrochemical-potential, resulting in erroneous solutions of the internal and terminal electrical characteristics from the electron channel current alone, which are in gross error when the neglected hole current becomes comparable to the electron current, both in subthreshold and strong inversion. This report presents the general theory, that includes both electron and hole channels and currents. The rectangular （ x, y, z） parallelepiped transistors,uniform in the width direction （z-axis）,with one or two MOS gates on thin and thick,and pure and impure base, are used to illustrate the two-dimensional effects and the correct internal and boundary conditions for the electric and the electron and hole electrochemical potentials. Complete analytical equations of the DC current-voltage characteristics of four common MOS transistor structures are derived without over-specification： the 1-gate on semi-infinite-thick impure-base （the traditional bulk transistor）, the 1-gate on thin impure-silicon layer over oxide-insulated silicon bulk （SOI） ,the 1-gate on thin impure-silicon layer deposited on insulating glass （SOI TFT）, and the 2-gates on thin pure-base （FinFETs）.

The Bipolar Field-Effect Transistor:II.Drift-Diffusion Current Theory(Two-MOS-Gates on Pure-Base)

This paper describes the drift-diffusion theory of the bipolar field-effect transistor （BiFET） with two identical and connected metal-oxide-silicon-gates （MOS-gates） on a thin-pure-base. Analytical solution is obtained by partitioning the two-dimensional transistor into two one-dimensional problems coupled by the parametric sur- face-electric-potential. Total and component output and transfer currents and conductances versus D. C. voltages from the drift-diffusion theory, and their deviations from the electrochemical （quasi-Fermi） potential-gradient theory,are presented over practical ranges of thicknesses of the silicon base and gate oxide. A substantial contri- bution from the longitudinal gradient of the square of the transverse electric field is shown.

'The Theory of Field-Effect Transistors XII.The Bipolar Drift and Diffusion Currents(1-2-MOS-Gates on Thin-Thick Pure-Impure Base)

The previous report （XI） gave the electrochemical-potential theory of the Bipolar Field-Effect Transistors. This report （XII） gives the drift-diffusion theory. Both treat 1-gate and 2-gate, pure-base and impure-base, and thin and thick base. Both utilize the surface and bulk potentials as the parametric variables to couple the voltage and current equations. In the present drift-diffusion theory, the very many current terms are identified by their mobility multiplier for the components of drift current,and the diffusivity multiplier for the components of the diffusion current. Complete analytical driftdiffusion equations are presented to give the DC current-voltage characteristics of four common MOS transistor structures. The drift current consists of four terms： 1-D （One-Dimensional） bulk charge drift term, 1-D carrier space-charge drift term,l-D Ex^2 （transverse electric field） drift term,2-D drift term. The diffusion current consists of three terms： 1-D bulk charge diffusion term,l-D carrier space-charge diffusion term,and 2-D diffusion term. The 1-D Ex^2 drift term was missed by all the existing transistor theories, and contributes significantly, as much as 25 % of the total current when the base layer is nearly pure. The 2-D terms come from longitudinal gradient of the longitudinal electric field,which scales as the square of the Debye to Channel length ratio, at 25nm channel length with nearly pure base, （LD/L）^2 = 10^6 but with impurity concentration of 10^18cm^-3 , （LD/L）^2 = 10^-2 .

The Bipolar Field-Effect Transistor:V.Bipolar Electrochemical Current Theory(Two-MOS-Gates on Thin-Base)

This paper reports the intrinsic-structure DC characteristics computed from the analytical electrochemical current theory of the bipolar field-effect transistor （BiFET） with two identical MOS gates on nanometer-thick pure-base of silicon with no generation-recombination-trapping. Numerical solutions are rapidly obtained for the three potential variables,electrostatic and electron and hole electrochemical potentials,to give the electron and hole surface and volume channel currents,using our cross-link two-route or zig-zag one-route recursive iteration algorithms. Boundary conditions on the three potentials dominantly affect the intrinsic-structure DC characteristics,illustrated by examples covering 20-decades of current （10-22 to 10-2 A/Square at 400cm^2/（V · s） mobility for 1.5nm gate-oxide, and 30nm-thick pure-base）. Aside from the domination of carrier space-charge-limited drift current in the strong surface channels,observed in the theory is also the classical drift current saturation due to physical pinch-off of an impure-base volume channel depicted by the 1952 Shockley junction-gate field-effect transistor theory,and its extension to complete cut-off of the pure-base volume channel,due to vanishing carrier screening by the few electron and hole carriers in the pure-base,with Debye length （25mm） much larger than device dimension （25nm）.

Electron Affinities of the Early Lanthanide Monoxide Molecules

The photoelectron imagings of LaO-, CeO-, PRO-, and NdO- at 1064 nm are reported. The well resolved photoelectron spectra allow the electron affinities to be determined as 0.99（1） eV for LaO, 1.00（1） eV for CeO, 1.00（1） eV for PrO, and 1.01（1） eV for NdO, respectively. Density functional calculations and natural atomic orbital analyses show that the 4f electrons tend to be localized and suffer little from the charge states of the molecules. The photodetached electron mainly originates from the 6s orbital of the metals. The ligand field theory with the δ=2 assumption is still an effective method to analyze the ground states of the neutral and anionic lanthanide monoxides.

Theoretical Studies on One-photon and Two-photon Absorption Properties of Pyrene-core Derivatives

The analytic response theory at density functional theory level is applied to investigate onephoton and two-photon absorption properties of a series of recently synthesized pyrene-core derivatives. The theoretical results show that there are a few charge-transfer states for each compound in the lower energy region. The one-photon absorption properties of the five investigated compounds are highly consistent with those given by experimental measurements. The two-photon absorption intensities of the compounds are greatly enhanced with the increments of the molecular sizes, in which the two-photon absorption cross section of the four-branched compound is about 5.6 times of that of the mono-branched molecule. Fhrthermore, it is shown that the two-photon absorption properties are sensitive to the geometrical arrangements.

Microseismic source location using the Log-Cosh function and distant sensor-removed P-wave arrival data

Source location is the core foundation of microseismic monitoring.To date,commonly used location methods have usually been based on the ray-tracing travel-time technique,which generally adopts an L1 or L2 norm to establish the location objective function.However,the L1 norm usually achieves low location accuracy,whereas the L2 norm is easily affected by large P-wave arrival-time picking errors.In addition,traditional location methods may be affected by the initial iteration point used to find a local optimum location.Furthermore,the P-wave arrival-time data that have travelled long distances are usually poor in quality.To address these problems,this paper presents a microseismic source location method using the Log-Cosh function and distant sensor-removed P-wave arrival data.Its basic principles are as follows:First,the source location objective function is established using the Log-Cosh function.This function has the stability of the L1 norm and location accuracy of the L2 norm.Then,multiple initial points are generated randomly in the mining area,and the established Log-Cosh location objective function is used to obtain multiple corresponding location results.The average value of the 50 location points with the largest data field potential values is treated as the initial location result.Next,the P-wave travel times from the initial location result to triggered sensors are calculated,and then the P-wave arrival data with travel times exceeding 0.2 s are removed.Finally,the aforementioned location steps are repeated with the denoised P-wave arrival dataset to obtain a high-precision location result.Two synthetic events and eight blasting events from the Yongshaba mine,China,were used to test the proposed method.Regardless of whether the P-wave arrival data with long travel times were eliminated,the location error of the proposed method was smaller than that of the L1/L2 norm and trigger-time-based location method(TT1/TT2 method).Furthermore,after eliminating the Pwave arrival data with long travel distances,the location accuracy of these three location methods increased,indicating that the proposed location method has good application prospects.

Effects of Atomic Coherence and Injected Classical Field on Chaotic Dynamics of Non-degenerate Cascade Two-Photon Lasers

Based on the cascade two-photon laser dynamic equation derived with the technique of quantum Langevin operators with the considerations of coherently prepared three-level atoms and the classical field injected into the cavity, we numerically study the effects of atomic coherence and classical field on the chaotic dynamics of a two-photon laser. Lyapunov exponent and bifurcation diagram calculations show that the Lorenz chaos and hyperchaos can be induced or inhibited by the atomic coherence and the classical field via crisis or Hopf bifurcations.

Improved Ligand-Field Theory with Effect of Electron-Phonon Interaction

Traditional ligand-field theory has to be improved by taking into account both 'pure electronic' contribution and electron-phonon interaction one (including lattice-vibrational relaxation energy). By means of improved ligand-field theory, R1, R2, R'3, R'2, and R'1 lines, U band, ground-state zero-field-splitting (GSZFS), and ground-state g factors of ruby and/or GSGG: Cr3+ as well as thermal shifts of GSZFS, R1 line and R2 line of ruby have been calculated.The results are in very good agreement with the experimental data. Moreover, it is found that the value of cubic-field parameter given by traditional ligand-field theory is inappropriately large. For thermal shifts of GSZFS, R1 line and R2 line of ruby, several conclusions have also been obtained.

Self-assembly of Asymmetric Dimer Particles in Supported Copolymer Bilayer

Using self-consistent field and density functional theories, we investigate the self-assembly behavior of asymmetric dimer particles in a supported AB block copolymer bilayer. Asymmetric dimer particles are amphiphilic molecules composed by two different spheres. One prefers to A block of copolymers and the other likes B block when they are introduced into the copolymer bilayer. The two layer structure of the dimer particles is formed within the bilayer. Due to the presence of the substrate surface, the symmetry of the two leaflets of the bilayer is broken, which may lead to two different layer structures of dimer particles within each leaflet of the bilayer. With the increasing concentration of the asymmetric dimer particles, in-plane structure of the dimer particles undergoes sparse square, hexagonal, dense square, and cylindrical structures. In a further condensed packing, a bending cylindrical structure comes into being. Here we verify that the entropic effect of copolymers, the enthalpy of the system and the steric repulsion of the dimer particles are three important factors determing the self-assembly of dimer particles within the supported copolymer bilayer.

Study of Depolarization Field Influence on Ferroelectric Films Within Transverse Ising Model

An improved transverse Ising model is proposed by taking the depolarization field effect into account. Within the framework of mean-held theory we investigate the behavior of the ferroelectric thin film. Our results show that the influence of the depolarization field is to flatten the spontaneous polarization profile and make the films more homogeneous, which is consistent with Ginzburg Landau theory. This fact shows that this model can be taken as an effective model to deal with the ferroelectric film and can be further extended to refer to quantum effect. The competition between quantum effect and depolarization field induces some interesting phenomena on ferroelectric thin films.

Shape Coexistence in Neutron-Deficient At Isotopes in Relativistic Mean-Field Model

The potential energy surfaces are calculated for neutron-deficient At isotopes from A - 190 to 207 in an axially deformed relativistic mean-field approach, using a quadratic constraint scheme for the first time. We find several minima in the potential energy surface for each nucleus, shape-coexistence, and quadratic deform are discussed.

Construction of improved rigid blocks failure mechanism for ultimate bearing capacity calculation based on slip-line field theory

Based on the slip-line field theory, a two-dimensional slip failure mechanism with mesh-like rigid block system was constructed to analyze the ultimate bearing capacity problems of rough foundation within the framework of the upper bound limit analysis theorem. In the velocity discontinuities in transition area, the velocity changes in radial and tangent directions are allowed. The objective functions of the stability problems of geotechnical structures are obtained by equating the work rate of external force to internal dissipation along the velocity discontinuities, and then the objective functions are transformed as an upper-bound mathematic optimization model. The upper bound solutions for the objective functions are obtained by use of the nonlinear sequential quadratic programming and interior point method. From the numerical results and comparative analysis, it can be seen that the method presented in this work gives better calculation results than existing upper bound methods and can be used to establish the more accurate plastic collapse load for the ultimate bearing capacity of rough foundation.