Gow-Gates法下牙槽神经阻滞麻醉在下颌阻生第三磨牙拔除术中的麻醉效果研究

目的通过临床随机对照试验的方法评价Gow-Gates法下牙槽神经阻滞麻醉在下颌阻生第三磨牙拔除术中的麻醉有效性和安全性。方法使用左右半口设计,32例患者的左右下颌阻生第三磨牙分别随机采用Gow-Gates法和传统注射法进行下牙槽神经阻滞麻醉,并拔除下颌阻生第三磨牙,记录麻醉效果及不良事件。结果所有患者均完成研究。Gow-Gates法的麻醉成功率为96.9%,传统注射法的麻醉成功率为90.6%,二者的麻醉成功率无统计学差异(P=0.317)。在麻醉程度上,Gow-Gates法麻醉程度为A和B级的比率为96.9%,明显好于传统注射法的78.1%(P=0.034)。Gow-Gates法的回抽出血率明显低于传统注射法(P=0.025),2种注射方法均未出现血肿。结论 Gow-Gates法下牙槽神经阻滞麻醉在下颌阻生第三磨牙拔除术中的麻醉效果好且较为安全,可以作为传统注射法的有效补充。

从“-gate”看全球化时代英汉媒体新词的特色

在全球化环境下,五花八门的"XX门"事件层出不穷,令人眼花缭乱。本文拟从"XX门"词族的兴起与发展入手,结合全球化时代大背景分析英汉媒体新词的特色,即能产性强,外来词互相兼容、形式简洁等特征,旨在于揭示全球化时代对英汉媒体新词发展趋势的积极影响。

支持Stage-Gate技术的一种设计管理方法研究

本文提出了将DSM矩阵和Stage -Gate技术相结合 ,应用于产品开发中的一种新方法。Stage -Gate方法能提升产品的开发成功率和缩短上市时间 ,将DSM技术应用于Stage -Gate中能对产品的设计结构提供一个清晰的认识并从信息依赖的观点把设计过程分解为各个阶段 ,有效地支持了Stage -Gate技术的发挥。

打开“gate”之门——对后缀“-gate”的语法化分析

自1972年水门事件被披露以来,"gate"已经从一个独立语素演变为一个专指丑闻的能产性强的后缀。许多学者曾从不同角度对此"gate"现象进行过探讨,但将其与语法化现象相联系的为数甚少。对后缀"-gate"的语法化进行的分析表明,该后缀是两组机制在两个层面运作的结果,即词汇语法层面上的重新分析和类推,语义层面上的认知转喻和隐喻,同时受明晰性、经济性、表达性三个语用动因的驱动。

“-gate”、“～门”的缀化对比与翻译

随"水门事件"的曝光,"-gate"与"～门"在媒体迅速传播、使用。从语言学角度深入地分析两个新兴附缀形态性质与属性、语义特点与语义扩展、句法特点、形成与变异的动因机制等,通过两者的不同翻译,旨在强化对"-gate"与"～门"的认识,指导语言实践。

“X-gate”到“X-门”汉化及比较研究

汉语中的"X-门"来源于英语的"X-gate"。从形态、语义、组合能力、造句功能以及"-gate"和"-门"的角色角度对"X-gate"和"X-门"进行了深入的对比分析,得出二者之间的共性是:①"X-gate"和"X-门"中"X"的构成都可以是名词成分且数量很多,同时还都可以是动词;②在语义上均用来表示消极意义;③组合能力相同,造句功能相似。二者之间的差异是:①"X-门"中的"X"可以是形容词,但"X-gate"中却不能。②汉语"-门"比英语"-gate"使用范围更广;③"-gate"已成为真正的构词后缀,而"-门"只是类词缀。

Gate-to-Gate模式下航班到达的综合调度

Gate-to-Gate是空中交通管理的未来趋势之一,研究了Gate-to-Gate模式下的航班到达问题,对航班到达的空中降落与地面滑行进行综合调度,建立了地空综合调度的简化数学模型,实现了航班到达从区调阶段到航站楼的关键点路径规划和时间安排,并对北京终端区及首都机场地面滑行过程进行了算例分析。针对实际应用规模大、求解时间长的问题,利用模型的特殊性制定了先松弛后固定分支求解的两步法求解算法,实现了在5分钟内能求得相对误差小于5.3%的近优解。

A high precision time-to-digital converter based on multi-phase clock implemented within Field-Programmable-Gate-Array

In this paper, the design of a coarse-fine interpolation Time-to-Digital Converter (TDC) is implemented in an ALTERA’s Cyclone FPGA. The carry-select chain performs as the tapped delay line. The Logic Array Block (LAB) having a propagation delay of 165 ps in the chain is synthesized as delay cell. Coarse counters triggered by the global clock count the more significant bits of the time data. This clock is also fed through the delay line, and LABs create the copies. The replicas are latched by the tested event signal, and the less significant bits are encoded from the latched binary bits. Single-shot resolution of the TDC can be 60 ps. The worst Differential Nonlinearity (DNL) is about 0.2 Least Significant Bit (LSB, 165 ps in this TDC module), and the Integral Nonlinearity (INL) is 0.6 LSB. In comparison with other architectures using the synchronous global clock to sample the taps, this architecture consumed less electric power and logic cells, and is more stable.

Decreased expression of hyperpolarisation-activated cyclic nucleotide-gated channel 3 in Hirschsprung's disease

AIM: To determine if hyperpolarisation-activated nucleotide-gated(HCN) channels exist in human colon, and to investigate the expression of HCN channels in Hirschsprung's disease.METHODS:We investigated HCN1,HCN2,HCN3 and HCN4 protein expression in pull-through specimens from patients with Hirschsprung’s disease(HSCR,n=10)using the proximal-most ganglionic segment and distalmost aganglionic segment,as well as in healthy control specimens obtained at the time of sigmoid colostomy closure in children who had undergone anorectoplasty for imperforate anus(n=10).Fluorescent immunohistochemistry was performed to assess protein distribution,which was then visualized using confocal microscopy.RESULTS:No HCN1 channel expression was observed in any of the tissues studied.Both HCN2 and HCN4proteins were found to be equally expressed in the aganglionic and ganglionic bowel in HSCR and controls.HCN3 channel expression was found to be markedly decreased in the aganglionic colon vs ganglionic colon and controls.HCN2-4 channels were seen to be expressed within neurons of the myenteric and submucosal plexus of the ganglionic bowel and normal controls,and also co-localised to interstitial cells of Cajal in all tissues studied.CONCLUSION:We demonstrate HCN channel expression in human colon for the first time.Reduced HCN3expression in aganglionic bowel suggests its potential role in HSCR pathophysiology.

Involvement of hyperpolarization-activated,cyclic nucleotide-gated cation channels in dorsal root ganglion in neuropathic pain

Dorsal root ganglion(DRG)neurons have peripheral terminals in skin,muscle,and other peripheral tissues,andcentral

Activin A maintains cerebral cortex neuronal survival and increases voltage-gated Na^+ neuronal current

Activin A, which was first described in 1986, has been shown to maintain hippocampal neuronal survival. Activin A increases intracellular free Ca2＋ via L-type Ca2＋ channels. Our previous study showed that activin A promotes neurite growth of dorsal root ganglia in embryonic chickens and inhibits nitric oxide secretion. The present study demonstrated for the first time that activin A could maintain cerebral cortex neuronal survival in vitro for a long period, and that activin A was shown to increase voltage-gated Na＋ current （/Na） in Neuro-2a cells, which was recorded by patch clamp technique. The present study revealed a novel mechanism for activin A, as well as the influence of activin A on neurons by regulating expressions of vasoactive intestine peptide and inducible nitric oxide synthase.

Functional Expression of Voltage-Gated Sodium Channels Nav1.5 in Human Breast Caner Cell Line MDA-MB-231

Voltage-gated sodium channels （VGSCs） are known to be involved in the initiation and progression of many malignancies, and the different subtypes of VGSCs play important roles in the metastasis cascade of many tumors. This study investigated the functional expression of Nav1.5 and its effect on invasion behavior of human breast cancer cell line MDA-MB-231. The mRNA and protein expression of Nav1.5 was detected by real time PCR, Western Blot and immunofluorescence. The effects of Nav1.5 on cell proliferation, migration and invasion were respectively assessed by MTT and Transwell. The effects of Nav1.5 on the secretion of matrix metalloproteases （MMPs） by MDA-MB-231 were analyzed by RT-PCR. The over-expressed Nav 1.5 was present on the membrane of MDA-MB-231 cells. The invasion ability in vitro and the MMP-9 mRNA expression were respectively decreased to （47.82±0.53）% and （43.97±0.64）% （P〈0.05） respectively in MDA-MB-23 t cells treated with VGSCs specific inhibitor tetrodotoxin （TTX） by blocking Navl.5 activity. It was concluded that Navl.5 functional expression potentiated the invasive behavior of human breast cancer cell line MDA-MB-231 by increasing the secretion of MMP-9.

A two-dimensional analytical subthreshold behavior model for junctionless dual-material cylindrical surrounding-gate MOSFETs

A two-dimensional analytical subthreshold behavior model for junctionless dual-material cylindrical surrounding- gate （JLDMCSG） metal-oxide-semiconductor field-effect transistors （MOSFETs） is proposed. It is derived by solving the two-dimensional Poisson＇s equation in two continuous cylindrical regions with any simplifying assumption. Using this analytical model, the subthreshold characteristics of JLDMCSG MOSFETs are investigated in terms of channel electro- static potential, horizontal electric field, and subthreshold current. Compared to junctionless single-material cylindrical surrounding-gate MOSFETs, JLDMCSG MOSFETs can effectively suppress short-channel effects and simultaneously im- prove carrier transport efficiency. It is found that the subthreshold current of JLDMCSG MOSFETs can be significantly reduced by adopting both a thin oxide and thin silicon channel. The accuracy of the analytical model is verified by its good agreement with the three-dimensional numerical simulator ISE TCAD.

改良Gow-Gates下牙槽神经阻滞麻醉在下颌阻生第三磨牙拔除术中的应用

目的:探讨一种微创高效的下牙槽神经阻滞麻醉方法。方法:将206例门诊拔除下颌阻生第三磨牙患者随机分为2组,实验组105例采用改良Gow-Gates法,对照组101例采用传统口内注射法(Halstead法)。记录麻醉成功率、麻醉效果和并发症,采用SPSS17.0软件包对数据进行统计学分析。结果:改良Gow-Gates法麻醉成功率为97.15%,Halstead法为89.10%,2组间显著差异(P=0.038)。改良Gow-Gates法在麻醉效果A、B级比率为90.48%,Halstead法为87.13%,2组间无显著性差异(P=0.446)。改良Gow-Gates法的并发症显著少于Halstead法(P=0.014)。结论:GowGates下牙槽神经阻滞麻醉是一种微创高效的麻醉方法 。

Research on Night Vision System Based on Range-Gated Imaging

A design of low-light-level night vision system is described,which can image objects selectively in the specific space. The system can selectively image some objects in specific distances,meanwhile ignore those shelters on the way of observation by combining an intensifying charge coupled device(ICCD) with a near infrared laser assisted in vision,whose operation wavelength matches with the photocathode of the image tube,and adopting the gated mode and adjustable time-delay. A semiconductor laser diode of 100 W in peak power is chosen for illumination. The laser and the image tube operate in 150 ns pulse width and 2 kHz repeat frequency. Some images of different objects at the different distances within 100 m can be obtained clearly,and even behind a grove by using a sampling circuit and a delay control device at 100 W in peak power of semiconductor laser diode,150 ns in pulse width of laser and image tube,2 kHz in repeat frequency.

Ultralow turnoff loss dual-gate SOI LIGBT with trench gate barrier and carrier stored layer

A novel ultralow turnoff loss dual-gate silicon-on-insulator （SOI） lateral insulated gate bipolar transistor （LIGBT） is proposed. The proposed SOI LIGBT features an extra trench gate inserted between the p-well and n-drift, and an n-type carrier stored （CS） layer beneath the p-well. In the on-state, the extra trench gate acts as a barrier, which increases the cartier density at the cathode side of n-drift region, resulting in a decrease of the on-state voltage drop （Von）. In the off-state, due to the uniform carder distribution and the assisted depletion effect induced by the extra trench gate, large number of carriers can be removed at the initial turnoff process, contributing to a low turnoff loss （Eoff）. Moreover, owing to the dual-gate field plates and CS layer, the carrier density beneath the p-well can greatly increase, which further improves the tradeoff between Eoff and Von. Simulation results show that Eoff of the proposed SOI LIGBT can decrease by 77% compared with the conventional trench gate SOI LIGBT at the same Von of 1.1 V.

A continuous analytic channel potential solution to doped symmetric double-gate MOSFETs from the accumulation to the strong-inversion region

A continuous yet analytic channel potential solution is proposed for doped symmetric double-gate （DG） MOSFETs from the accumulation to the strong-inversion region. Analytical channel potential relationship is derived from the complete 1-D Poisson equation physically, and the channel potential solution of the DG MOSFET is obtained analytically. The extensive comparisons between the presented solution and the numerical simulation illustrate that the solution is not only accurate and continuous in the whole operation regime of DG MOSFETs, but also valid to wide doping concentration and various geometrical sizes, without employing any fitting parameter.

100-nm T-gate InAlAs/InGaAs InP-based HEMTs with f_T = 249 GHz and f_(max) = 415 GHz

InA1As/InGaAs high electron mobility transistors （HEMTs） on an InP substrate with well-balanced cutoff frequency fT and maximum oscillation frequency frnax are reported. An InA1As/InGaAs HEMT with 100-nm gate length and gate width of 2 × 50 μm shows excellent DC characteristics, including full channel current of 724 mA/mm, extrinsic maximum transconductance gm.max of 1051 mS/mm, and drain-gate breakdown voltage BVDG of 5.92 V. In addition, this device exhibits fT = 249 GHz and fmax = 415 GHz. These results were obtained by fabricating an asymmetrically recessed gate and minimizing the parasitic resistances. The specific Ohmic contact resistance was reduced to 0.031 0.mm. Moreover, the fT obtained in this work is the highest ever reported in 100-nm gate length InA1As/InGaAs InP-based HEMTs. The outstanding gm.max, fT, fmax, and good BVDG make the device suitable for applications in low noise amplifiers, power amplifiers, and high speed circuits.

Dual-gate lateral double-diffused metal—oxide semiconductor with ultra-low specific on-resistance

A new high voltage trench lateral double-diffused metal–oxide semiconductor （LDMOS） with ultra-low specific onresistance （R on,sp ） is proposed. The structure features a dual gate （DG LDMOS）： a planar gate and a trench gate inset in the oxide trench. Firstly, the dual gate can provide a dual conduction channel and reduce R on,sp dramatically. Secondly, the oxide trench in the drift region modulates the electric field distribution and reduces the cell pitch but still can maintain comparable breakdown voltage （BV）. Simulation results show that the cell pitch of the DG LDMOS can be reduced by 50% in comparison with that of conventional LDMOS at the equivalent BV; furthermore, R on,sp of the DG LDMOS can be reduced by 67% due to the smaller cell pitch and the dual gate.

Fabrication and characterization of groove-gate MOSFETs based on a self-aligned CMOS process

N and P-channel groove-gate MOSFETs based on a self-aligned CMOS process have been fabricated and characterized. For the devices with channel length of 140nm, the measured drain induced barrier lowering （DIBL） was 66mV/V for n-MOSFETs and 82mV/V for p-MOSFETs. The substrate current of a groove-gate n-MOSFET was 150 times less than that of a conventional planar n-MOSFET, These results demonstrate that groove-gate MOSFETs have excellent capabilities in suppressing short-channel effects. It is worth emphasizing that our groove-gate MOSFET devices are fabricated by using a simple process flow, with the potential of fabricating devices in the sub-100nm range.