We elucidate the importance of a capping layer on the structural evolution and phase change properties of carbondoped Ge2 Sb2 Te5（C-GST） films during heating in air. Both the C-GST films without and with a thin SiO2...We elucidate the importance of a capping layer on the structural evolution and phase change properties of carbondoped Ge2 Sb2 Te5（C-GST） films during heating in air. Both the C-GST films without and with a thin SiO2 capping layer（C-GST and C-GST/SiO2） are deposited for comparison. Large differences are observed between C-GST and C-GST/SiO2 films in resistance-temperature, x-ray diffraction, x-ray photoelectron spectroscopy,Raman spectra, data retention capability and optical band gap measurements. In the C-GST film, resistancetemperature measurement reveals an unusual smooth decrease in resistance above 110℃ during heating. Xray diffraction result has excluded the possibility of phase change in the C-GST film below 170℃. The x-ray photoelectron spectroscopy experimental result reveals the evolution of Te chemical valence because of the carbon oxidation during heating. Raman spectra further demonstrate that phase changes from an amorphous state to the hexagonal state occur directly during heating in the C-GST film. The quite smooth decrease in resistance is believed to be related with the formation of Te-rich GeTe4-n Gen（n = 0, 1） units above 110℃ in the C-GST film. The oxidation of carbon is harmful to the C-GST phase change properties.展开更多
The relaxation oscillation of the phase change memory （PCM） devices based on the Ge2Sb2Te5 material is investigated by applying square current pulses. The current pulses with different amplitudes could be accurately...The relaxation oscillation of the phase change memory （PCM） devices based on the Ge2Sb2Te5 material is investigated by applying square current pulses. The current pulses with different amplitudes could be accurately given by the independently designed current testing system. The relaxation oscillation across the PCM device could be measured using an oscilloscope. The oscillation duration decreases with time, showing an inner link with the shrinking threshold voltage Vth. However, the relaxation oscillation would not terminate until the remaining voltage Von reaches the holding voltage Vh. This demonstrates that the relaxation oscillation might be controlled by Von. The increasing current amplitudes could only quicken the oscillation velocity but not be able to eliminate it, which indicates that the relaxation oscillation might be an inherent behavior for the PCM cell.展开更多
In the fabrication of phase change random access memory （PRAM） devices, high temperature thermal processes are inevitable. We investigate the thermal stability of GezSb2Te5 （GST） which is a prototypical phase chan...In the fabrication of phase change random access memory （PRAM） devices, high temperature thermal processes are inevitable. We investigate the thermal stability of GezSb2Te5 （GST） which is a prototypical phase change material. After high temperature process, voids of phase change material exist at the interface between Ge2Sb2Te5 and substrate in the initial open memory cell. This lower region of GezSb2Te5 is found to be a Te-rich phase change layer. Phase change memory devices are fabricated in different process conditions and examined by scanning electron microscopy and energy dispersive X-ray. It is found that hot-chuck process, nitrogen-doping process, and lower temperature inter-metal dielectric （IMD） deposition process can ease the thermal impact of line-GST PRAM cell.展开更多
A series of CeMn2（Si1-xGex）2（x = 0.2, 0.4, 0.6, 0.8） compounds are prepared by the arc-melting method. All the samples primarily crystallize in the Th Cr2Si2-type structure. The temperature dependences of zero-fie...A series of CeMn2（Si1-xGex）2（x = 0.2, 0.4, 0.6, 0.8） compounds are prepared by the arc-melting method. All the samples primarily crystallize in the Th Cr2Si2-type structure. The temperature dependences of zero-field-cooled（ZFC） and FC magnetization measurements show a transition from antiferromagnetic（AFM） state to ferromagnetic（FM） state at room temperature with the increase of the Ge concentration. For x = 0.4, the sample exhibits two kinds of phase transitions with increasing temperature： from AFM to FM and from FM to paramagnetic（PM） at around TN-197 K and T C-300 K,respectively. The corresponding Arrott curves indicate that the AFM–FM transition is of first-order character and the FM–PM transition is of second-order character. Meanwhile, the coexistence of positive and negative magnetic entropy changes can be observed, which are corresponding to the AFM–FM and FM–PM transitions, respectively.展开更多
The magneto-caloric effect of Gd5 Si2Ge2 compounds produced by various techniques is investigated in terms of their magnetization behaviors in the magnetic field from 0 to 2.0 T.The studied materials include arc-melte...The magneto-caloric effect of Gd5 Si2Ge2 compounds produced by various techniques is investigated in terms of their magnetization behaviors in the magnetic field from 0 to 2.0 T.The studied materials include arc-melted, annealed and sintered alloys.The results demonstrate that the Gd5Si2Ge2 alloys obtained under different processing conditions possess distinct magneto-caloric effect due to their various microstructures.Proper annealing treatment can enhance the magneto-caloric effect of the alloy remarkably.While the sintered alloy bears relatively lower value of magnetic entropy change ( △ SM) than arc-melted one.The magnetic entropy change of the annealed Gd5 Si2Ge2 alloy arrives the arrives the maximum value of - △SM = 15.29 J· kg-1· K-1 for magnetic field change under 2.0 T in the present work.展开更多
The phases and magnetocaloric effect in the alloys (Gd1-xErx)5Si1.8Ge2.2 with x=0, 0.1, 0.2 and 0.3 were investigated by X-ray diffraction analysis and magnetization measurement. The samples were single phase with the...The phases and magnetocaloric effect in the alloys (Gd1-xErx)5Si1.8Ge2.2 with x=0, 0.1, 0.2 and 0.3 were investigated by X-ray diffraction analysis and magnetization measurement. The samples were single phase with the monoclinic Gd5Si2Ge2-type structure. With the increase of Er content, the Curie temperature (Tc) decreased obviously from 253 K of the alloy with x=0 to 114 K with x=0.3. The maximum magnetic entropy changed in the samples of (Gd1-xErx)5Si1.8Ge2.2 with x=0.0, 0.1, 0.2 and 0.3 were 6.88, 8.32, 9.59 and 10.24 J·kg-1·K-1 respectively in the applied field change of 0～2.0 T.展开更多
基金Supported by the National Natural Science Foundation of China under Grant No 11704161the Natural Science Foundation of Jiangsu Province under Grant Nos BK20170309 and BK20151172the Changzhou Science and Technology Bureau under Grant Nos CJ20159049 and CJ20160028
文摘We elucidate the importance of a capping layer on the structural evolution and phase change properties of carbondoped Ge2 Sb2 Te5（C-GST） films during heating in air. Both the C-GST films without and with a thin SiO2 capping layer（C-GST and C-GST/SiO2） are deposited for comparison. Large differences are observed between C-GST and C-GST/SiO2 films in resistance-temperature, x-ray diffraction, x-ray photoelectron spectroscopy,Raman spectra, data retention capability and optical band gap measurements. In the C-GST film, resistancetemperature measurement reveals an unusual smooth decrease in resistance above 110℃ during heating. Xray diffraction result has excluded the possibility of phase change in the C-GST film below 170℃. The x-ray photoelectron spectroscopy experimental result reveals the evolution of Te chemical valence because of the carbon oxidation during heating. Raman spectra further demonstrate that phase changes from an amorphous state to the hexagonal state occur directly during heating in the C-GST film. The quite smooth decrease in resistance is believed to be related with the formation of Te-rich GeTe4-n Gen（n = 0, 1） units above 110℃ in the C-GST film. The oxidation of carbon is harmful to the C-GST phase change properties.
基金Supported by the Strategic Priority Research Program of Chinese Academy of Sciences under Grant No XDA09020402the National Key Basic Research Program of China under Grant Nos 2013CBA01900,2010CB934300,2011CBA00607 and 2011CB932804+2 种基金the National Integrate Circuit Research Program of China under Grant No 2009ZX02023-003the National Natural Science Foundation of China under Grant Nos 61176122,61106001,61261160500 and 61376006the Science and Technology Council of Shanghai under Grant Nos 12nm0503701,13DZ2295700,12QA1403900,13ZR1447200 and 14ZR1447500
文摘The relaxation oscillation of the phase change memory （PCM） devices based on the Ge2Sb2Te5 material is investigated by applying square current pulses. The current pulses with different amplitudes could be accurately given by the independently designed current testing system. The relaxation oscillation across the PCM device could be measured using an oscilloscope. The oscillation duration decreases with time, showing an inner link with the shrinking threshold voltage Vth. However, the relaxation oscillation would not terminate until the remaining voltage Von reaches the holding voltage Vh. This demonstrates that the relaxation oscillation might be controlled by Von. The increasing current amplitudes could only quicken the oscillation velocity but not be able to eliminate it, which indicates that the relaxation oscillation might be an inherent behavior for the PCM cell.
基金Project supported by the National Basic Research Program of China(Grant Nos.2010CB934300,2011CBA00607,and 2011CB9328004)the National Integrate Circuit Research Program of China(Grant No.2009ZX02023-003)+1 种基金the National Natural Science Foundation of China(Grant Nos.60906004,60906003,61006087,61076121,61176122,and 61106001)the Funds from the Science and Technology Council of Shanghai,China(Grant No.12nm0503701)
文摘In the fabrication of phase change random access memory （PRAM） devices, high temperature thermal processes are inevitable. We investigate the thermal stability of GezSb2Te5 （GST） which is a prototypical phase change material. After high temperature process, voids of phase change material exist at the interface between Ge2Sb2Te5 and substrate in the initial open memory cell. This lower region of GezSb2Te5 is found to be a Te-rich phase change layer. Phase change memory devices are fabricated in different process conditions and examined by scanning electron microscopy and energy dispersive X-ray. It is found that hot-chuck process, nitrogen-doping process, and lower temperature inter-metal dielectric （IMD） deposition process can ease the thermal impact of line-GST PRAM cell.
基金Project supported by the Beijing Natural Science Foundation,China(Grant No.2152034)the National Natural Science Foundation of China(Grant Nos.11274357 and 51271196)
文摘A series of CeMn2（Si1-xGex）2（x = 0.2, 0.4, 0.6, 0.8） compounds are prepared by the arc-melting method. All the samples primarily crystallize in the Th Cr2Si2-type structure. The temperature dependences of zero-field-cooled（ZFC） and FC magnetization measurements show a transition from antiferromagnetic（AFM） state to ferromagnetic（FM） state at room temperature with the increase of the Ge concentration. For x = 0.4, the sample exhibits two kinds of phase transitions with increasing temperature： from AFM to FM and from FM to paramagnetic（PM） at around TN-197 K and T C-300 K,respectively. The corresponding Arrott curves indicate that the AFM–FM transition is of first-order character and the FM–PM transition is of second-order character. Meanwhile, the coexistence of positive and negative magnetic entropy changes can be observed, which are corresponding to the AFM–FM and FM–PM transitions, respectively.
文摘The magneto-caloric effect of Gd5 Si2Ge2 compounds produced by various techniques is investigated in terms of their magnetization behaviors in the magnetic field from 0 to 2.0 T.The studied materials include arc-melted, annealed and sintered alloys.The results demonstrate that the Gd5Si2Ge2 alloys obtained under different processing conditions possess distinct magneto-caloric effect due to their various microstructures.Proper annealing treatment can enhance the magneto-caloric effect of the alloy remarkably.While the sintered alloy bears relatively lower value of magnetic entropy change ( △ SM) than arc-melted one.The magnetic entropy change of the annealed Gd5 Si2Ge2 alloy arrives the arrives the maximum value of - △SM = 15.29 J· kg-1· K-1 for magnetic field change under 2.0 T in the present work.
基金Project supported by the Natural Science Foundation of Guangxi ,China (0249012)
文摘The phases and magnetocaloric effect in the alloys (Gd1-xErx)5Si1.8Ge2.2 with x=0, 0.1, 0.2 and 0.3 were investigated by X-ray diffraction analysis and magnetization measurement. The samples were single phase with the monoclinic Gd5Si2Ge2-type structure. With the increase of Er content, the Curie temperature (Tc) decreased obviously from 253 K of the alloy with x=0 to 114 K with x=0.3. The maximum magnetic entropy changed in the samples of (Gd1-xErx)5Si1.8Ge2.2 with x=0.0, 0.1, 0.2 and 0.3 were 6.88, 8.32, 9.59 and 10.24 J·kg-1·K-1 respectively in the applied field change of 0～2.0 T.
