Solid-state NMR study on sodium intercalation at low voltage window for Na_(3)V_(2)(PO_(4))_(3) as an anode

In-situ XRD,^(31)P NMR and ^(23)Na NMR were used to analyze the interaction behavior of Na_(3)V_(2)(PO_(4))_(3) at low voltage,and then a new intercalation model was proposed.During the transition from Na_(3)V_(2)(PO_(4))_(3) to Na_(4)V_(2)(PO_(4))_(3),Na ions insert into M1,M2 and M3 sites simultaneously.Afterwards,during the transition of Na_(4)V_(2)(PO_(4))_(3)to Na_(5)V_(2)(PO_(4))_(3),Na ions mainly insert into M3 site.

An effective'salt in dimethyl sulfoxide/water'electrolyte enables high-voltage supercapacitor operated at-50℃

Compared with organic electrolytes,aqueous electrolytes exhibit significantly higher ionic conductivity and possess inherent safety features,showcasing unique advantages in supercapacitors.However,challenges remain for low-salt aqueous electrolytes operating at high voltage and low temperature.Herein,we report a low-salt(0.87 m,m means mol kg^(-1))'salt in dimethyl sulfoxide/water'hybrid electrolyte with non-flammability via hybridizing aqueous electrolyte with an organic co-solvent of dimethyl sulfoxide(hydrogen bond acceptor).As a result,the 0.87 m hybrid electrolyte exhibits enhanced electrochemical stability,a freezing temperature below-50℃,and an outstanding ionic conductivity of 0.52mS cm~(-1)at-50℃.Dimethyl sulfoxide can anchor water molecules through intermolecular hydrogen bond interaction,effectively reinforcing the stability of water in the hybrid electrolyte.Furthermore,the interaction between dimethyl sulfoxide and water molecules diminishes the involvement of water in the generation of ordered ice crystals,finally facilitating the low-temperature performance of the hybrid electrolyte.When paired with the 0.87 m'salt in dimethyl sulfoxide/water'hybrid electrolyte,the symmetric supercapacitor presents a 2.0 V high operating voltage at 25℃,and can operate stably at-50℃.Importantly,the suppressed electrochemical reaction of water at-50℃further leads to the symmetric supercapacitor operated at a higher voltage of 2.6 V.This modification strategy opens an effective avenue to develop low-salt electrolytes for high-voltage and low-temperature aqueous supercapacitors.

ANovel Non-Isolated Cubic DC-DC Converter with High Voltage Gain for Renewable Energy Power Generation System

In recent years,switched inductor(SL)technology,switched capacitor(SC)technology,and switched inductor-capacitor(SL-SC)technology have been widely applied to optimize and improve DC-DC boost converters,which can effectively enhance voltage gain and reduce device stress.To address the issue of low output voltage in current renewable energy power generation systems,this study proposes a novel non-isolated cubic high-gain DC-DC converter based on the traditional quadratic DC-DC boost converter by incorporating a SC and a SL-SC unit.Firstly,the proposed converter’s details are elaborated,including its topology structure,operating mode,voltage gain,device stress,and power loss.Subsequently,a comparative analysis is conducted on the voltage gain and device stress between the proposed converter and other high-gain converters.Then,a closed-loop simulation system is constructed to obtain simulation waveforms of various devices and explore the dynamic performance.Finally,an experimental prototype is built,experimental waveforms are obtained,and the experimental dynamic performance and conversion efficiency are analyzed.The theoretical analysis’s correctness is verified through simulation and experimental results.The proposed converter has advantages such as high voltage gain,low device stress,high conversion efficiency,simple control,and wide input voltage range,achieving a good balance between voltage gain,device stress,and power loss.The proposed converter is well-suited for renewable energy systems and holds theoretical significance and practical value in renewable energy applications.It provides an effective solution to the issue of low output voltage in renewable energy power generation systems.

Low Birth Weight and Intermittent Preventive Treatment of Malaria in Pregnant Women in Lomé (Togo) in 2021: A Cross-Sectional Study

Background: Since 2012, the World Health Organization has recommended intermittent preventive treatment with sulfadoxine-pyrimethamine (IPT-SP) to prevent malaria-related complications in pregnant women. Ten years following these recommendations, we conducted this study to estimate the coverage for three doses of IPT-SP (IPT3) as well as the prevalence of low birth weight (LBW), and its associated factors in Lomé (Togo) in 2021. Methods: A cross-sectional study was conducted between January and March 2021. An exhaustive recruitment of women and their newborns was carried out in the maternity wards of the Sylvanus Olympio University Hospital Center. Data from antenatal consultations and clinical data of the newborns were collected. Multivariate logistic regression was carried out to determine factors associated with LBW. Results: A total of 252 mother-child pairs were included in this study. Median age of the mothers was 27 years, IQR [24-31]. More than a third (35.3%) of the mothers were primigravida. IPT3 coverage was 66.7% and 14.7% of newborns had a LBW. The prevalence of LBW was 33.3% [23.3-43.4] in women who had received fewer than 3 doses of IPT-SP and 5.4% [2.0-8.8] in those who had received at least 3 doses of IPT-SP (p Conclusion: Ten years following recommendations of the WHO on IPT-SP, malaria prevention based on IPT-SP is not optimal among pregnant women in Lomé, and the proportion of LBW children remains high. Actions to strengthen the three-dose IPT-SP policy are needed to prevent malaria and its consequences among newborns in Togo.

Improved RF power performance of InAlN/GaN HEMT by optimizing rapid thermal annealing process for high-performance low-voltage terminal applications

Improved radio-frequency(RF)power performance of InAlN/GaN high electron mobility transistor(HEMT)is achieved by optimizing the rapid thermal annealing(RTA)process for high-performance low-voltage terminal applications.By optimizing the RTA temperature and time,the optimal annealing condition is found to enable low parasitic resistance and thus a high-performance device.Besides,compared with the non-optimized RTA HEMT,the optimized one demonstrates smoother ohmic metal surface morphology and better heterojunction quality including the less degraded heterojunction sheet resistance and clearer heterojunction interfaces as well as negligible material out-diffusion from the barrier to the channel and buffer.Benefiting from the lowered parasitic resistance,improved maximum output current density of 2279 mA·mm^(-1)and higher peak extrinsic transconductance of 526 mS·mm^(-1)are obtained for the optimized RTA HEMT.In addition,due to the superior heterojunction quality,the optimized HEMT shows reduced off-state leakage current of 7×10^(-3)mA·mm^(-1)and suppressed current collapse of only 4%,compared with those of 1×10^(-1)mA·mm^(-1)and 15%for the non-optimized one.At 8 GHz and V_(DS)of 6 V,a significantly improved power-added efficiency of 62%and output power density of 0.71 W·mm^(-1)are achieved for the optimized HEMT,as the result of the improvement in output current,knee voltage,off-state leakage current,and current collapse,which reveals the tremendous advantage of the optimized RTA HEMT in high-performance low-voltage terminal applications.

Demonstration and modeling of unipolar-carrier-conduction GaN Schottky-pn junction diode with low turn-on voltage

By introducing a thin p-type layer between the Schottky metal and n-GaN layer, this work presents a Schottky-pn junction diode(SPND) configuration for the GaN rectifier fabrication. Specific unipolar carrier conduction characteristic is demonstrated by the verification of temperature-dependent current–voltage(I–V) tests and electroluminescence spectra.Meanwhile, apparently advantageous forward conduction properties as compared to the pn diode fabricated on the same wafer have been achieved, featuring a lower turn-on voltage of 0.82 V. Together with the analysis model established in the GaN SPND for a wide-range designable turn-on voltage, this work provides an alternative method to the GaN rectifier strategies besides the traditional solution.

Research on Low Voltage Series Arc Fault Prediction Method Based on Multidimensional Time-Frequency Domain Characteristics

The load types in low-voltage distribution systems are diverse.Some loads have current signals that are similar to series fault arcs,making it difficult to effectively detect fault arcs during their occurrence and sustained combustion,which can easily lead to serious electrical fire accidents.To address this issue,this paper establishes a fault arc prototype experimental platform,selects multiple commonly used loads for fault arc experiments,and collects data in both normal and fault states.By analyzing waveform characteristics and selecting fault discrimination feature indicators,corresponding feature values are extracted for qualitative analysis to explore changes in timefrequency characteristics of current before and after faults.Multiple features are then selected to form a multidimensional feature vector space to effectively reduce arc misjudgments and construct a fault discrimination feature database.Based on this,a fault arc hazard prediction model is built using random forests.The model’s multiple hyperparameters are simultaneously optimized through grid search,aiming tominimize node information entropy and complete model training,thereby enhancing model robustness and generalization ability.Through experimental verification,the proposed method accurately predicts and classifies fault arcs of different load types,with an average accuracy at least 1%higher than that of the commonly used fault predictionmethods compared in the paper.

A Hybrid Five-Level Single-Phase Rectifier with Low Common-Mode Voltage

Rectifiers with high efficiency and high power density are crucial to the stable and efficient power supply of 5G communication base stations,which deserves in-depth investigation.In general,there are two key problems to be addressed:supporting both alternating current(AC)and direct current(DC)input,and minimizing the common-mode voltage as well as leakage current for safety reasons.In this paper,a hybrid five-level single-phase rectifier is proposed.A five-level topology is adopted in the upper arm,and a half-bridge diode topology is adopted in the lower arm.A dual closed-loop control strategy and a flying capacitor voltage regulation method are designed accordingly so that the compatibility of both AC and DC input is realized with low common voltage and small passive devices.Simulation and experimental results demonstrate the effectiveness and performance of the proposed rectifier.

Research of Three-Phase Unbalanced Treatment in Low-Voltage Distribution Network Based on New Commutation Switch

Low-voltage distribution systems in our country are mostly used in agricultural loads and household loads. The value and using time of these kinds of loads are uncontrollable, which lead to the three-phase imbalance in low-voltage distribution system, and seriously affect the quality of power supply. A new type of the commutation system and an improved quantum genetic algorithm (IQGA) are proposed in the paper. At last, the rationality and the efficiency of the method are verified by a practical example.

Grain refinement of as-cast superalloy IN718 under action of low voltage pulsed magnetic field

The grain refinement of superalloy IN718 under the action of low voltage pulsed magnetic field was investigated. The experimental results show that fine equiaxed grains are acquired under the action of low voltage pulsed magnetic field. The refinement effect of the pulsed magnetic field is affected by the melt cooling rate and superheating. The decrease of cooling rate and superheating enhance the refinement effect of the low voltage pulsed magnetic field. The magnetic force and the melt flow during solidification are modeled and simulated to reveal the grain refinement mechanism. It is considered that the melt convection caused by the pulsed magnetic field, as well as cooling rate and superheating contributes to the refinement of solidified grains.

A Novel Offset-Cancellation Technique for Low Voltage CMOS Differential Amplifiers

Based on a physical understanding of nonlinearity and mismatch, a novel offset-cancellation technique for low voltage CMOS differential amplifiers is proposed. The technique transfers the offset voltage from the output to other parts of the differential amplifier and can greatly reduce the input-referred offset voltage without extra power consumption. A 1.8V CMOS differential amplifier is implemented in 0.18μm CMOS process using the proposed technique. The simulation results show that the technique could reduce the input-referred offset voltage of the amplifier by 40% with a 20% load transistor mismatch and a 10% input differential transistor mismatch. Moreover, the proposed technique consumes the least power and achieves the highest integration among various offset-cancellation techniques.

Low Voltage CMOS Gilbert Mixers for Bluetooth Transceiver

Based on the analyses of the reported Gilbert mixers operating at low supply vol tage,a down-conversion mixer and an up-conversion mixer for 2.4GHz bluetooth transceiver are presented with the modified low voltage design techniques,respe ctively.Feedback and current mirror techniques suitable for low voltage operatio n are used to improve the linearity of the up-conversion mixer,and folded-casc ode output stage is adopted to optimize the noise and conversion gain of the dow n-conversion mixer operating at low voltage.Based on 0.35μm CMOS technology,s imulations are performed with 2V supply voltage.The results show that 20dBm thir d-order intercept point (IIP3),87mV output signal amplitude are achieved for up -conversion mixer with about 3mA current;while 20dB conversion gain (CG),6.5nV /Hz input-referred noise,4.4dBm IIP3 are obtained for down-conversion mixer with about 3.5mA current.

High Performance VHF Power VDMOSFETs for Low Voltage Applications

A high performance VHF power VDMOSFET,ap plying to the mobile communications,is developed,which can deliver an output power of 12W with the drain efficiency of 70% as well as the gain of 12dB at a low supply voltage of 12V and 175MHz.It is fabricated by using the terraced gat e structure and refractory molybdenum (Mo) gate technology.

A Low-Voltage,Low-Power CMOS High Dynamic Range dB-Linear VGA for Super Heterodyne Receivers

This paper presents a low-voltage low-power variable gain amplifier,which is applied in the automatic gain control loop of a super heterodyne receiver. Six stages are cascaded to provide an 81dB digitally controlled gain range in a 3dB step. The gain step error is less than 0.5dB. It operates at an intermediate frequency of 300kHz, and the power consumption is 1.35mW from a 1.8V supply. The prototype chip is implemented in a TSMC＇s 0.18μm 1P6M CMOS process and occupies approximately 0.24mm^2 . It is very suitable for portable wire- less communication systems. The measurement results agree well with the system requirements.

A Low-Voltage,High Efficiency Power Generation Structure for UHF RFID

This paper presents a new power generation structure that can provide DC energy for passive UHF RFID with high sensitivity and high efficiency. The structure is designed with 0.18μm standard CMOS technology, including two charge pumps,a current reference, and a group of bias circuits. Low-voltage performance is improved thanks to the bias structure,which eliminates the threshold voltage drop and body-effect of conventional circuits. A 350mV minimum input level is required to generate a 1.5V power supply for a 100k~ load with power conversion efficiency （PCE） of 22%. PCE up to 29.8% is achieved with a 60kΩ load. Simulation results show that the new circuit is superior to conventional charge pumps.

A Low Voltage,Low Power RF/Analog Front-End Circuit for Passive UHF RFID Tags

This paper presents a low voltage, low power RF/analog front-end circuit for passive ultra high frequency （UHF） radio frequency identification （RFID） tags. Temperature compensation is achieved by a reference generator using sub-threshold techniques. The chip maintains a steady system clock in a temperature range from - 40 to 100℃. Some novel building blocks are developed to save system power consumption,including a zero static current power-on reset circuit and a voltage regulator. The RF/analog front-end circuit is implemented with digital base-band and EEPROM to construct a whole tag chip in 0. 18μm CMOS EEPROM technology without Schottcky diodes. Measured results show that the chip has a minimum supply voltage requirement of 0.75V. At this voltage, the total current consumption of the RF/analog frontend circuit is 4.6μA.

Self-Aligned InGaP/GaAs Power HBTswith a Low Bias Voltage

A self aligned InGaP/GaAs power HBTs for L band power amplifier with low bias voltage are described.Base emitter metal self aligning,air bridge,and wafer thinning are used to improve microwave power performance.A power HBT with double size of emitter of (3μm×15μm)×12 is fabricated.When the packaged HBT operates in class AB at a collector bias of 3V,a maximum 23dBm output power with 45% power added efficiency is achieved at 2GHz.The results show that the InGaP/GaAs power HBTs have great potential in mobile communication systems operating at low bias voltage.

Study on the instantaneous protection reliability of low voltage circuit breakers

This paper outlines the significance of enhancing the instantaneous protection reliability of low voltage circuit breakers and describes their main failure modes. The instantaneous failure mechanism of low voltage circuit breakers was analyzed so that measures to improve instantaneous protection reliability can be determined. Furthermore, the theory of the instantaneous characteristics calibration device for low voltage circuit breakers and the method of eliminating the non-periodic component of test current are given in detail. Finally, the test results are presented.

Analysis and management strategies for the low voltage problems of rural power grid based on the distribution network flow calculation method

For a long time, because of the lack of investment capital and enough attentions, the overall constructions of rural power grid were far behind than the urban power grid in Chongqing Jiangbei Power Company. The low voltage problems were highlighted in the rural power grid due to the characteristics of rural power grid. Using the distribution network flow calculation method, we evaluated the low voltage problems of the rural power grid which belongs to Chongqing Jiangbei Power Company. In addition, we collected the data of distribution transformers in electricity consumption peak period. Some practical management strategies were proposed by the analysis and evaluation of potential and appeared low voltage problems.

Key technologies for medium and low voltage DC distribution system

Development of the medium and low voltage DC distribution system is of great significance to a regional transmission of electric energy,increasing a penetration rate of new energy,and enhancing a safety of the operation of the AC/DC interconnected grid.This paper first summarizes the medium and low voltage DC distribution system schemes and plans put forward by many countries,and then elaborate status of under-construction medium and low voltage DC distribution system project cases in China.Based on these project cases,this paper analyzes key issues involved in the medium and low voltage DC distribution system topologies,equipment,operation control technologies and DC fault protections,in order to provide theoretical and technical reference for future medium and low voltage DC distribution system-related projects.Finally,this paper combines a current China research status to summarize and give a prediction about the future research direction of medium and low voltage DC distribution system,which can provide reference for the research of medium and low voltage DC distribution system.