An approach for the wafer-level synthesis of size- and site-controlled amorphous silicon nanowires （α-SiNWs） is presented in this paper. Microscale Cu pattern arrays are precisely defined on SiO2 films with the hel...An approach for the wafer-level synthesis of size- and site-controlled amorphous silicon nanowires （α-SiNWs） is presented in this paper. Microscale Cu pattern arrays are precisely defined on SiO2 films with the help of photolithography and wet etching. Due to dewetting, Cu atoms shrink to the center of patterns during the annealing process, and react with the SiO2 film to open a diffusion channel for Si atoms to the substrate, α-SiNWs finally grow at the center of Cu patterns, and can be tuned by varying critical factors such as Cu pattern volume, SiO2 thickness, and annealing time. This offers a simple way to synthesize and accurately position a SiNW array on a large area.展开更多
基金This work was supported by the National Basic Research Program of China （Nos. 2011CB707601, 2011CB707605, and 2012CB934102）, the National Science and Technology Supporting Program （No. 2012BAJ11B01）, the Creative Research of National Natural Science Foundation of China （No. 61021064）, and the National Natural Science Foundation of China （Nos. 60936001, 91123037 and 81201358）.
文摘An approach for the wafer-level synthesis of size- and site-controlled amorphous silicon nanowires （α-SiNWs） is presented in this paper. Microscale Cu pattern arrays are precisely defined on SiO2 films with the help of photolithography and wet etching. Due to dewetting, Cu atoms shrink to the center of patterns during the annealing process, and react with the SiO2 film to open a diffusion channel for Si atoms to the substrate, α-SiNWs finally grow at the center of Cu patterns, and can be tuned by varying critical factors such as Cu pattern volume, SiO2 thickness, and annealing time. This offers a simple way to synthesize and accurately position a SiNW array on a large area.
