A resistivity distribution with a space of 3mm between test points was measured on a slice-of-silicon monocrystal （diameter 75mm） using an inclined four-point probe. This paper has determined the number of resistivi...A resistivity distribution with a space of 3mm between test points was measured on a slice-of-silicon monocrystal （diameter 75mm） using an inclined four-point probe. This paper has determined the number of resistivity divisions and their separations by statistical methods and introduced fuzzy mathematics to place the data into different fuzzy sets, after choosing the exponent function as a membership function for fuzzy sets and suitable values of thresholds. One fuzzy set corresponds to one resistivity isocontour. Then,the resistivity isocontours can be drawn with a definite separation and fi- nally shown in a map with MATLAB. The deviation of resistivity data on an isocontour is small and there are few residual test points without connections. So, the connection of the isocontours are high-quality and useful in application for instructing practical production.展开更多
A molecular dynamics （MD） simulation is carried out to analyze the effect of cutting edge radius,cutdepth, and grinding speed on the depth of subsurface damage layers in monocrystal silicon grinding processes on an ...A molecular dynamics （MD） simulation is carried out to analyze the effect of cutting edge radius,cutdepth, and grinding speed on the depth of subsurface damage layers in monocrystal silicon grinding processes on an atomic scale. The results show that when the cutting edge radius decreases in the nanometric grinding process with the same cut-depth and grinding speed, the depth of the damage layers and the potential energy between the silicon atoms decrease too. Also, when the cut depth increases, both the depth of the damage layers and the potential energy between silicon atoms increase. When the grinding speed is between 20 and 200m/s,the depth of the damage layers does not change much with the increase of the grinding speed under the same cutting edge radius and cut depth conditions. This means that the MD simulation is not sensitive to changes in the grinding speed, and thus increasing the grinding speed properly can shorten the sion,the subsurface damage of monocrystal silicon is silicon atoms, which is verified by the ultra-precision simulation time and enlarge the simulation scale. In conclumainly based on the change of the potential energy between grinding and CMP experiments.展开更多
Basing on TGA (thermal gravimetric analysis) of thermal nitridation at l200, l250, l300℃, respectively, analysis of high temperature kinetics for nitridation of silicon monocrystal has been carried out. According to ...Basing on TGA (thermal gravimetric analysis) of thermal nitridation at l200, l250, l300℃, respectively, analysis of high temperature kinetics for nitridation of silicon monocrystal has been carried out. According to the theory for kinetics of reaction of vapour with solid phase a nitridation kinetic model, from which it can be shown thal the rate of nitridation reaction of silicon crystal should be controlled by three stage limiting factors, was proposed. These limiting factors are chemical reaction, chemical reaction mixed with diffusion and diffu- sion. Using this model to treat our experimental data, satisfactory correlation coefficient and apparent activation energy of nitridation of p-type (lll) silicon crystal have been obtained. The nitride film was identi' fied to be a-Si_3N_4 (Hexagonal, a=0.7758nm,c_o=0.5623nm) by X-ray diffraction analysis. Morphology of the nitride films formed in different nitridation duration was observed in both planar andcross-sectional views by SEM (scanning electron microscope).展开更多
1. Introduction Thermal oxidation of silicon monocrystalis a very important process in fabricationof metal--oxide--semiconductor (MOS) devices.In recent years it has received great atten-tion. Various proposals for ox...1. Introduction Thermal oxidation of silicon monocrystalis a very important process in fabricationof metal--oxide--semiconductor (MOS) devices.In recent years it has received great atten-tion. Various proposals for oxidation modeshave been made by different groups.Now most of the authors working in thisfield hold the view that the oxidation rateof silicon obeys a typical parabolic rule,that is, the oxidation reaction is controlledby diffusion. The experimental data inRef. can be taken and a kinetic curve展开更多
The single event effect(SEE) sensitivity of silicon–germanium heterojunction bipolar transistor(Si Ge HBT) irradiated by 100-Me V proton is investigated. The simulation results indicate that the most sensitive positi...The single event effect(SEE) sensitivity of silicon–germanium heterojunction bipolar transistor(Si Ge HBT) irradiated by 100-Me V proton is investigated. The simulation results indicate that the most sensitive position of the Si Ge HBT device is the emitter center, where the protons pass through the larger collector-substrate(CS) junction. Furthermore, in this work the experimental studies are also carried out by using 100-Me V proton. In order to consider the influence of temperature on SEE, both simulation and experiment are conducted at a temperature of 93 K. At a cryogenic temperature, the carrier mobility increases, which leads to higher transient current peaks, but the duration of the current decreases significantly.Notably, at the same proton flux, there is only one single event transient(SET) that occurs at 93 K. Thus, the radiation hard ability of the device increases at cryogenic temperatures. The simulation results are found to be qualitatively consistent with the experimental results of 100-Me V protons. To further evaluate the tolerance of the device, the influence of proton on Si Ge HBT after gamma-ray(^(60)Coγ) irradiation is investigated. As a result, as the cumulative dose increases, the introduction of traps results in a significant reduction in both the peak value and duration of the transient currents.展开更多
We present a micro-Pirani vacuum gauge using the low-resistivity monocrystal silicon as the heaters and heat sinks fabricated by the post complementary metal oxide semiconductor （CMOS） microelectromechanical system ...We present a micro-Pirani vacuum gauge using the low-resistivity monocrystal silicon as the heaters and heat sinks fabricated by the post complementary metal oxide semiconductor （CMOS） microelectromechanical system （MEMS） process. The metal interconnection of the device is fabricated by a 0.5 μm standard CMOS process on 8-inch silicon wafer. Then, a SiO2-Si low-temperature fusion bonding is developed to bond the CMOS wafer and the MEMS wafer, with the electrical connection realized by the tungsten through silicon via process. Wafer- level A1Ge euteetic bonding is adopted to package the Pirani gauge in a non-hermetic cavity to protect the gauge from being damaged or contaminated in the dicing and assembling process, and to make it suitable for actual applications. To increase the accuracy of the test and restrain negative influence of temperature drift, the Wheatstone bridge structure is introduced. The test results show that before capping, the gauge has an average sensitivity of 1.04 × 104 K.W-1Torr-1 in dynamic range of 0.01 20 Torr. After capping, the sensitivity of the gauge does not decrease but increases to 1.12 × 104 K.W-1 Torr-1.展开更多
Silicon(111) and Silicon(100) were employed for fabrication of TiO 2 films by metal organic chemical vapor deposition(MOCVD). Titanium(IV) isopropoxide(Ti[O(C 3H 7) 4]) was used as a precursor. The as deposited TiO 2 ...Silicon(111) and Silicon(100) were employed for fabrication of TiO 2 films by metal organic chemical vapor deposition(MOCVD). Titanium(IV) isopropoxide(Ti[O(C 3H 7) 4]) was used as a precursor. The as deposited TiO 2 films were characterized with FE\|SEM, XRD and AFM. The photocatalytic properties were investigated by decomposition of aqueous OrangeⅡ. And UV VIS photospectrometer was used for checking the absorption characteristics and photocatalytic degradation activity. The crystalline and structural properties of TiO 2 film had crucial influences on the photodegradation efficiency. For MOCVD in situ deposited films on Si substrates, the photoactivities varied following a shape of “M': at lower(350℃), middle(500℃) and higher(800℃) temperature of deposition, relative lower photodegradation activities were observed. At 400℃ and 700℃ of deposition, relative higher efficiencies of degradation were obtained, because one predominant crystallite orientation could be obtained as deposition at the temperature of two levels, especially a single anatase crystalline TiO 2 film could be obtained at 700℃.展开更多
A versatile metal-organic chemical vapor deposition （MOCVD） system was designed and constructed. Copper films were deposited on silicon （100） substrates by chemical vapor deposition （CVD） using Cu（hfac）2 as a ...A versatile metal-organic chemical vapor deposition （MOCVD） system was designed and constructed. Copper films were deposited on silicon （100） substrates by chemical vapor deposition （CVD） using Cu（hfac）2 as a precursor. The growth of Cu nucleus on silicon substrates by H2 reduction of Cu（hfac）2 was studied by atomic force microscopy and scanning electron microscopy. The growth mode of Cu nucleus is initially Volmer-Weber mode （island）, and then transforms to Stranski-Rastanov mode （layer-by-layer plus island）. The mechanism of Cu nucleation on silicon （100） substrates was further investigated by X-ray photoelectron spectroscopy. From Cu2p, O1s, F1s, Si2p patterns, the observed C=O, OH and CF3/CF2 should belong to Cu（hfac） formed by the thermal dissociation of Cu（hfac）2. H2 reacts with hfac on the surface, producing OH. With its accumulation, OH reacts with hfac, forming HO-hfac, and desorbs, meanwhile, the copper oxide is reduced, and thus the redox reaction between Cu（hafc）2 and H2 occurs.展开更多
Regimes of continuous and pulsed laser action on high-melting oxide compounds of ZrO2 were found with the aim of obtaining steady coatings on monocrystal silicon on laser ablation.X-ray phase analyses,scanning and ato...Regimes of continuous and pulsed laser action on high-melting oxide compounds of ZrO2 were found with the aim of obtaining steady coatings on monocrystal silicon on laser ablation.X-ray phase analyses,scanning and atomic-force microscopy reveal that the coatings obtained are of nanocluster structure with the cubic ordering.In this case the nanoclusters reach several hundreds of nanometers in size.An assumption was made that on laser ablation of ZrO2 thermostabilization may take place where a minimum of the surface energy is attained just at cubic ordering.展开更多
We have studied the interracial reactions between amorphous LaAlO3 thin films and Si substrates, using high- resolution transmission electron microscopy and x-ray photoelectron spectroscopy. It has been shown that the...We have studied the interracial reactions between amorphous LaAlO3 thin films and Si substrates, using high- resolution transmission electron microscopy and x-ray photoelectron spectroscopy. It has been shown that the interracial layer between LaAlO3 film and Si substrate chemical states show that the ratio of La 4d3/2 to Al 2p is SiLaxAlyOz. The depth distributions of La, Si and Al of the interfacial layer remains unchanged with the depth compared to that of the LaAlO3 film. Moreover, the Si content, in the interracial layer gradually decreases with increasing thickness of the interracial layer. These results strongly suggest that the Al element is not deficient in the interracial layer, as previously believed, and the formation of a SiLaxAlyOz interracial layer is mainly due to the diffusion of Si from the substrate during the LaAlO3 film deposition. With the understanding of the interracial layer formation, ones can control the interface characteristics to ensure the desired performances of devices using high-k oxides as gate dielectrics.展开更多
Silicon (111) and Silicon (100) have been employed for fabrication of TiO_2films by metal organic chemical vapor deposition (MOCVD). Titanium (IV) isopropoxide (Ti[O(C_3H_7)_4]) was used as a precursor. The as-deposit...Silicon (111) and Silicon (100) have been employed for fabrication of TiO_2films by metal organic chemical vapor deposition (MOCVD). Titanium (IV) isopropoxide (Ti[O(C_3H_7)_4]) was used as a precursor. The as-deposited TiO_2 films have been characterized withField emission scanning electron microscopy (FE-SEM), X ray diffraction (XRD) and atomic forcemicroscopy (AFM). The photocatalytic properties were investigated by decomposition of aqueous orangeII. The crystalline and structural propertiesof TiO_2 film had crucial influences on thephotodegradation efficiency. For MOCVD in-situ deposited films on Si substrates, the photoactivitiesvaried following a shape of 'M': At lower (350 °C ) middle (500 °C) and higher (800 °C)temperature of deposition, relative lower photodegradation activities have been observed. At 400 °Cand 700 'C of deposition, relative higher efficiencies of degradation have been obtained, becauseone predominant crystallite orientation could be obtained as deposition at those two temperatures,especially a single anatase crystalline TiO_2 film could be obtained at 700 °C growth.展开更多
The research and development history of silicon Neutron Transmutation Doping (NTD) technology and its applications at home and abroad are introduced in this paper.The advantages of NTD,compared with conventional techn...The research and development history of silicon Neutron Transmutation Doping (NTD) technology and its applications at home and abroad are introduced in this paper.The advantages of NTD,compared with conventional technology of doping,are narrated.The principle of NTD as well as the implementation of the main procedures related to Si NTD is explained.The market demand tendency is prospected,and the advanced measures on NTD quality control are described.展开更多
文摘A resistivity distribution with a space of 3mm between test points was measured on a slice-of-silicon monocrystal （diameter 75mm） using an inclined four-point probe. This paper has determined the number of resistivity divisions and their separations by statistical methods and introduced fuzzy mathematics to place the data into different fuzzy sets, after choosing the exponent function as a membership function for fuzzy sets and suitable values of thresholds. One fuzzy set corresponds to one resistivity isocontour. Then,the resistivity isocontours can be drawn with a definite separation and fi- nally shown in a map with MATLAB. The deviation of resistivity data on an isocontour is small and there are few residual test points without connections. So, the connection of the isocontours are high-quality and useful in application for instructing practical production.
文摘A molecular dynamics （MD） simulation is carried out to analyze the effect of cutting edge radius,cutdepth, and grinding speed on the depth of subsurface damage layers in monocrystal silicon grinding processes on an atomic scale. The results show that when the cutting edge radius decreases in the nanometric grinding process with the same cut-depth and grinding speed, the depth of the damage layers and the potential energy between the silicon atoms decrease too. Also, when the cut depth increases, both the depth of the damage layers and the potential energy between silicon atoms increase. When the grinding speed is between 20 and 200m/s,the depth of the damage layers does not change much with the increase of the grinding speed under the same cutting edge radius and cut depth conditions. This means that the MD simulation is not sensitive to changes in the grinding speed, and thus increasing the grinding speed properly can shorten the sion,the subsurface damage of monocrystal silicon is silicon atoms, which is verified by the ultra-precision simulation time and enlarge the simulation scale. In conclumainly based on the change of the potential energy between grinding and CMP experiments.
文摘Basing on TGA (thermal gravimetric analysis) of thermal nitridation at l200, l250, l300℃, respectively, analysis of high temperature kinetics for nitridation of silicon monocrystal has been carried out. According to the theory for kinetics of reaction of vapour with solid phase a nitridation kinetic model, from which it can be shown thal the rate of nitridation reaction of silicon crystal should be controlled by three stage limiting factors, was proposed. These limiting factors are chemical reaction, chemical reaction mixed with diffusion and diffu- sion. Using this model to treat our experimental data, satisfactory correlation coefficient and apparent activation energy of nitridation of p-type (lll) silicon crystal have been obtained. The nitride film was identi' fied to be a-Si_3N_4 (Hexagonal, a=0.7758nm,c_o=0.5623nm) by X-ray diffraction analysis. Morphology of the nitride films formed in different nitridation duration was observed in both planar andcross-sectional views by SEM (scanning electron microscope).
文摘1. Introduction Thermal oxidation of silicon monocrystalis a very important process in fabricationof metal--oxide--semiconductor (MOS) devices.In recent years it has received great atten-tion. Various proposals for oxidation modeshave been made by different groups.Now most of the authors working in thisfield hold the view that the oxidation rateof silicon obeys a typical parabolic rule,that is, the oxidation reaction is controlledby diffusion. The experimental data inRef. can be taken and a kinetic curve
基金Project supported by the National Natural Science Foundation of China (Grant Nos.61574171,61704127,11875229,51872251,and 12027813)。
文摘The single event effect(SEE) sensitivity of silicon–germanium heterojunction bipolar transistor(Si Ge HBT) irradiated by 100-Me V proton is investigated. The simulation results indicate that the most sensitive position of the Si Ge HBT device is the emitter center, where the protons pass through the larger collector-substrate(CS) junction. Furthermore, in this work the experimental studies are also carried out by using 100-Me V proton. In order to consider the influence of temperature on SEE, both simulation and experiment are conducted at a temperature of 93 K. At a cryogenic temperature, the carrier mobility increases, which leads to higher transient current peaks, but the duration of the current decreases significantly.Notably, at the same proton flux, there is only one single event transient(SET) that occurs at 93 K. Thus, the radiation hard ability of the device increases at cryogenic temperatures. The simulation results are found to be qualitatively consistent with the experimental results of 100-Me V protons. To further evaluate the tolerance of the device, the influence of proton on Si Ge HBT after gamma-ray(^(60)Coγ) irradiation is investigated. As a result, as the cumulative dose increases, the introduction of traps results in a significant reduction in both the peak value and duration of the transient currents.
基金Supported by the National High Technology Research and Development Program of China under Grant No 2015AA042602
文摘We present a micro-Pirani vacuum gauge using the low-resistivity monocrystal silicon as the heaters and heat sinks fabricated by the post complementary metal oxide semiconductor （CMOS） microelectromechanical system （MEMS） process. The metal interconnection of the device is fabricated by a 0.5 μm standard CMOS process on 8-inch silicon wafer. Then, a SiO2-Si low-temperature fusion bonding is developed to bond the CMOS wafer and the MEMS wafer, with the electrical connection realized by the tungsten through silicon via process. Wafer- level A1Ge euteetic bonding is adopted to package the Pirani gauge in a non-hermetic cavity to protect the gauge from being damaged or contaminated in the dicing and assembling process, and to make it suitable for actual applications. To increase the accuracy of the test and restrain negative influence of temperature drift, the Wheatstone bridge structure is introduced. The test results show that before capping, the gauge has an average sensitivity of 1.04 × 104 K.W-1Torr-1 in dynamic range of 0.01 20 Torr. After capping, the sensitivity of the gauge does not decrease but increases to 1.12 × 104 K.W-1 Torr-1.
文摘Silicon(111) and Silicon(100) were employed for fabrication of TiO 2 films by metal organic chemical vapor deposition(MOCVD). Titanium(IV) isopropoxide(Ti[O(C 3H 7) 4]) was used as a precursor. The as deposited TiO 2 films were characterized with FE\|SEM, XRD and AFM. The photocatalytic properties were investigated by decomposition of aqueous OrangeⅡ. And UV VIS photospectrometer was used for checking the absorption characteristics and photocatalytic degradation activity. The crystalline and structural properties of TiO 2 film had crucial influences on the photodegradation efficiency. For MOCVD in situ deposited films on Si substrates, the photoactivities varied following a shape of “M': at lower(350℃), middle(500℃) and higher(800℃) temperature of deposition, relative lower photodegradation activities were observed. At 400℃ and 700℃ of deposition, relative higher efficiencies of degradation were obtained, because one predominant crystallite orientation could be obtained as deposition at the temperature of two levels, especially a single anatase crystalline TiO 2 film could be obtained at 700℃.
基金ACKN0WLEDGMENT This work was supported by the National Natural Science Foundation of China （No.20576112）.
文摘A versatile metal-organic chemical vapor deposition （MOCVD） system was designed and constructed. Copper films were deposited on silicon （100） substrates by chemical vapor deposition （CVD） using Cu（hfac）2 as a precursor. The growth of Cu nucleus on silicon substrates by H2 reduction of Cu（hfac）2 was studied by atomic force microscopy and scanning electron microscopy. The growth mode of Cu nucleus is initially Volmer-Weber mode （island）, and then transforms to Stranski-Rastanov mode （layer-by-layer plus island）. The mechanism of Cu nucleation on silicon （100） substrates was further investigated by X-ray photoelectron spectroscopy. From Cu2p, O1s, F1s, Si2p patterns, the observed C=O, OH and CF3/CF2 should belong to Cu（hfac） formed by the thermal dissociation of Cu（hfac）2. H2 reacts with hfac on the surface, producing OH. With its accumulation, OH reacts with hfac, forming HO-hfac, and desorbs, meanwhile, the copper oxide is reduced, and thus the redox reaction between Cu（hafc）2 and H2 occurs.
基金This work is financially supported by the Russian Foundation for Basic Research (No 04-02-9700and 06-02-9600)by the Presidium of the Far Eastern Branch of the Russian Academy of Sciences(No 06-III-A-02-034)
文摘Regimes of continuous and pulsed laser action on high-melting oxide compounds of ZrO2 were found with the aim of obtaining steady coatings on monocrystal silicon on laser ablation.X-ray phase analyses,scanning and atomic-force microscopy reveal that the coatings obtained are of nanocluster structure with the cubic ordering.In this case the nanoclusters reach several hundreds of nanometers in size.An assumption was made that on laser ablation of ZrO2 thermostabilization may take place where a minimum of the surface energy is attained just at cubic ordering.
文摘We have studied the interracial reactions between amorphous LaAlO3 thin films and Si substrates, using high- resolution transmission electron microscopy and x-ray photoelectron spectroscopy. It has been shown that the interracial layer between LaAlO3 film and Si substrate chemical states show that the ratio of La 4d3/2 to Al 2p is SiLaxAlyOz. The depth distributions of La, Si and Al of the interfacial layer remains unchanged with the depth compared to that of the LaAlO3 film. Moreover, the Si content, in the interracial layer gradually decreases with increasing thickness of the interracial layer. These results strongly suggest that the Al element is not deficient in the interracial layer, as previously believed, and the formation of a SiLaxAlyOz interracial layer is mainly due to the diffusion of Si from the substrate during the LaAlO3 film deposition. With the understanding of the interracial layer formation, ones can control the interface characteristics to ensure the desired performances of devices using high-k oxides as gate dielectrics.
文摘Silicon (111) and Silicon (100) have been employed for fabrication of TiO_2films by metal organic chemical vapor deposition (MOCVD). Titanium (IV) isopropoxide (Ti[O(C_3H_7)_4]) was used as a precursor. The as-deposited TiO_2 films have been characterized withField emission scanning electron microscopy (FE-SEM), X ray diffraction (XRD) and atomic forcemicroscopy (AFM). The photocatalytic properties were investigated by decomposition of aqueous orangeII. The crystalline and structural propertiesof TiO_2 film had crucial influences on thephotodegradation efficiency. For MOCVD in-situ deposited films on Si substrates, the photoactivitiesvaried following a shape of 'M': At lower (350 °C ) middle (500 °C) and higher (800 °C)temperature of deposition, relative lower photodegradation activities have been observed. At 400 °Cand 700 'C of deposition, relative higher efficiencies of degradation have been obtained, becauseone predominant crystallite orientation could be obtained as deposition at those two temperatures,especially a single anatase crystalline TiO_2 film could be obtained at 700 °C growth.
文摘The research and development history of silicon Neutron Transmutation Doping (NTD) technology and its applications at home and abroad are introduced in this paper.The advantages of NTD,compared with conventional technology of doping,are narrated.The principle of NTD as well as the implementation of the main procedures related to Si NTD is explained.The market demand tendency is prospected,and the advanced measures on NTD quality control are described.
