基于SOI薄膜,提出一种引入P+N注入结的光敏BJMOSFET(Bipolar JunctionMetal-Oxide-Semiconductor Field Effect Transistor)结构.在此光敏器件中,栅电压使薄膜耗尽但不反型,光生载流子的复合可以忽略.根据基本的半导体方程,建立该器件...基于SOI薄膜,提出一种引入P+N注入结的光敏BJMOSFET(Bipolar JunctionMetal-Oxide-Semiconductor Field Effect Transistor)结构.在此光敏器件中,栅电压使薄膜耗尽但不反型,光生载流子的复合可以忽略.根据基本的半导体方程,建立该器件的物理模型.数值模拟结果显示:在光敏BJMOSFET中,光生电子和空穴都参与导电,和传统的MOS管相比具有较高的灵敏度.此外,它能消除CMOS工艺下PN结大的暗电流,完全与CMOS工艺兼容.展开更多
The parasitic capacitance effect and its influence to the performance have been investigated in Bi-polar Junction Metal-Oxide-Semiconductor Field-Effect Transistor (BJMOSFET). The frequency characteristic equivalent c...The parasitic capacitance effect and its influence to the performance have been investigated in Bi-polar Junction Metal-Oxide-Semiconductor Field-Effect Transistor (BJMOSFET). The frequency characteristic equivalent circuit and high frequency response model of BJMOSFET have been presented. The frequency characteristic of BJMOSFET is simulated using the multi-transient analytical method and PSPICE9 simulator. The conclusions that BJMOSFET owns less total capacitance, wider frequency band, better transient charac-teristic and better frequency responses are reached by comparing with the traditional MOSFET at the same structure parameters and bias conditions. BJMOSFET, as a novel promising high frequency device, would be desired to find application in future integrated circuit.展开更多
A new power MOSFET Structure with a pn junction——Bipolar Junction MOSFET(BJMOSFET) has been proposed.The device has the advantages of both BJT and FET. The numerical model of the I V characteristics of BJMOSFET has ...A new power MOSFET Structure with a pn junction——Bipolar Junction MOSFET(BJMOSFET) has been proposed.The device has the advantages of both BJT and FET. The numerical model of the I V characteristics of BJMOSFET has been obtained on the basis of both numerical and analytical methods. With the software package of Mathematic, we firstly calculate the gain factor, and then simulate the voltage tranmission,voltage output and voltage transfer’s characteristic graphs of the BJMOSFET. The simulation result indicates that BJMOSFET has the current density, which is about 25% larger than the power MOSFET, under the same operating conditions and with the same structure parameters, except that the threshold voltage increase a little.展开更多
The resolution expression for the temperature dependence of the current and threshold voltage is deduced as well as the analysis of temperature characteristics of BJMOSFET. Equivalent circuit of analysis and simulatio...The resolution expression for the temperature dependence of the current and threshold voltage is deduced as well as the analysis of temperature characteristics of BJMOSFET. Equivalent circuit of analysis and simulation has been established for the BJMOSFET temperature characteristics. By using the general circuit simulation software of PSpice9 and computer simulation, characteristic graphs of the BJMOSFET output characteristic, transient characteristic and amplitude-frequency characteristic with temperature variation are obtained. The results accorded very good with theoretical analysis and proved that BJMOSFET has better temperature characteristics than traditional MOSFET.展开更多
文摘基于SOI薄膜,提出一种引入P+N注入结的光敏BJMOSFET(Bipolar JunctionMetal-Oxide-Semiconductor Field Effect Transistor)结构.在此光敏器件中,栅电压使薄膜耗尽但不反型,光生载流子的复合可以忽略.根据基本的半导体方程,建立该器件的物理模型.数值模拟结果显示:在光敏BJMOSFET中,光生电子和空穴都参与导电,和传统的MOS管相比具有较高的灵敏度.此外,它能消除CMOS工艺下PN结大的暗电流,完全与CMOS工艺兼容.
基金Supported by the Hunan Provincial Natural Science Foundation (No.05JJ30115).
文摘The parasitic capacitance effect and its influence to the performance have been investigated in Bi-polar Junction Metal-Oxide-Semiconductor Field-Effect Transistor (BJMOSFET). The frequency characteristic equivalent circuit and high frequency response model of BJMOSFET have been presented. The frequency characteristic of BJMOSFET is simulated using the multi-transient analytical method and PSPICE9 simulator. The conclusions that BJMOSFET owns less total capacitance, wider frequency band, better transient charac-teristic and better frequency responses are reached by comparing with the traditional MOSFET at the same structure parameters and bias conditions. BJMOSFET, as a novel promising high frequency device, would be desired to find application in future integrated circuit.
文摘A new power MOSFET Structure with a pn junction——Bipolar Junction MOSFET(BJMOSFET) has been proposed.The device has the advantages of both BJT and FET. The numerical model of the I V characteristics of BJMOSFET has been obtained on the basis of both numerical and analytical methods. With the software package of Mathematic, we firstly calculate the gain factor, and then simulate the voltage tranmission,voltage output and voltage transfer’s characteristic graphs of the BJMOSFET. The simulation result indicates that BJMOSFET has the current density, which is about 25% larger than the power MOSFET, under the same operating conditions and with the same structure parameters, except that the threshold voltage increase a little.
文摘The resolution expression for the temperature dependence of the current and threshold voltage is deduced as well as the analysis of temperature characteristics of BJMOSFET. Equivalent circuit of analysis and simulation has been established for the BJMOSFET temperature characteristics. By using the general circuit simulation software of PSpice9 and computer simulation, characteristic graphs of the BJMOSFET output characteristic, transient characteristic and amplitude-frequency characteristic with temperature variation are obtained. The results accorded very good with theoretical analysis and proved that BJMOSFET has better temperature characteristics than traditional MOSFET.
